臺灣學術機構典藏系統 (Taiwan Academic Institutional Repository, TAIR)

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臺灣學術機構典藏系統 (Taiwan Academic Institutional Repository, TAIR)

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	Repositories
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	2019臺灣學術機構典藏研討會
	機構典藏系統RC7版本已發佈

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Showing items 146-155 of 176 (18 Page(s) Totally)
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Institution	Date	Title	Author
臺大學術典藏	2018-09-10T04:35:19Z	Compact Modeling of SOI CMOS VLSI Devices	J. .B. Kuo; JAMES-B KUO
臺大學術典藏	2018-09-10T04:35:19Z	Asymmetric Gate Misalignment Effect on Subthreshold Characteristics DG SOI NMOS Devices Considering Fringing Electric Field Effect	M. T. Lin; E. C. Sun; J. B. Kuo; JAMES-B KUO
臺大學術典藏	2018-09-10T04:35:18Z	Ultra-low-voltage SOI CMOS Inverting Driver Circuit Using Effective Charge Pump Based on Bootstrap Technique	JAMES-B KUO; J. B. Kuo; J. H. T. Chen
臺大學術典藏	2018-09-10T04:35:18Z	Modeling the Fringing Electric Field Effect on the Threshold Voltage of FD SOI NMOS Devices with the LDD/Sidewall Oxide Spacer Structure	S. C. Lin; J. B. Kuo; JAMES-B KUO
臺大學術典藏	2018-09-10T04:35:18Z	SOI CMOS VLSI	J. B. Kuo; JAMES-B KUO
臺大學術典藏	2018-09-10T04:35:18Z	Novel Sub-1V CMOS Domino Dynamic Logic Circuit Using a Direct Bootstrap (DB) Technique for Low-voltage CMOS VLSI	P. C. Chen; J. B. Kuo; JAMES-B KUO
臺大學術典藏	2018-09-10T04:35:18Z	A Novel 0.8V BP-DTMOS Content Addressable Memory Cell Circuit Derived from SOI-DTMOS Techniques	E. Shen; J. B. Kuo; JAMES-B KUO
臺大學術典藏	2018-09-10T04:35:18Z	Analysis of Gate Misalignment Effect on the Threshold Voltage of Double-Gate (DG) Ultrathin FD SOI NMOS Devices Using a Compact Model Considering Fringing Electric Field Effect	J. B. Kuo; E. C. Sun; M. T. Lin; JAMES-B KUO
臺大學術典藏	2018-09-10T04:15:06Z	The Fringing Electric Field Effect on the Short-Channel Effect Threshold Voltage of FD SOI NMOS Devices with LDD/Sidewall Oxide Spacer Structure	J. B. Kuo; S. C. Lin; JAMES-B KUO
臺大學術典藏	2018-09-10T04:15:06Z	Fringing-Induced Barrier Lowering (FIBL) Effects of 100nm FD SOI NMOS Devices with High Permittivity Gate Dielectrics and LDD/Sidewall Oxide Spacer	S. C. Lin; J. B. Kuo; JAMES-B KUO

Showing items 146-155 of 176 (18 Page(s) Totally)
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