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"j i chyi"
Showing items 11-21 of 21 (1 Page(s) Totally)
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| 臺大學術典藏 |
2018-09-10T04:35:54Z |
Surface band-bending effects on the optical properties of indium gallium nitride multiple quantum wells
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L.-H. Peng,; C.-W. Shih,; C.-M. Lai,; C.-C. Chuo,; J.-I. Chyi,; LUNG-HAN PENG |
| 臺大學術典藏 |
2018-09-10T04:15:35Z |
Photo-enhanced wet oxidation and etching of GaN
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L.-H. Peng,; H.-M. Wu,; C.-C. Chuo,; J.-I. Chyi,; LUNG-HAN PENG |
| 元智大學 |
2012-06 |
Effect of Gate Length on Device Performances of AlSb/InAs High Electron Mobility Transistors Fabricated Using BCl3 Dry Etching
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C.I. Kuo; Heng-Tung Hsu; C.Y. Hsu; C.H. Yu; H.C. Ho; E.Y. Chang; J.I. Chyi |
| 元智大學 |
2012-04-26 |
BCl3 ICP Dry Etching on AlSb/InAs HEMTs for Low-Voltage Operations
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C.I.Kuo; Heng-Tung Hsu; C.Y. Hsu; C.H.Yu; H.C.Ho; G. W. Huang, , and ; E.Y. Chang; J.I. Chyi |
| 元智大學 |
2012-04-26 |
BCl3 ICP Dry Etching on AlSb/InAs HEMTs for Low-Voltage Operations
|
C.I.Kuo; Heng-Tung Hsu; C.Y. Hsu; C.H.Yu; H.C.Ho; G. W. Huang, , and ; E.Y. Chang; J.I. Chyi |
| 元智大學 |
2010-01 |
Characterization and comparison of GaAs/AlGaAs Uni-Traveling Carrier and Separated-Transport-Recombination Photodiode based High-Power Sub-THz Photonic Transmitter
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陳念偉; J.-W. Shi; Y.-T. Li; C.-Y. Huang; S.-H. Chen; J.-I. Chyi; Y.-C. Wang; C.-S. Yang; C.-L. Pan |
| 國立臺灣海洋大學 |
2009-10 |
Electrically manipulating the optical sensitivity function in quantum wells for nanoacoustic wave detection
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C.-K.Sun; P.-H.Wang; Y.-C.Wen; S.-H.Guo; C.-M.Lai; H.-C.Lin; P.-R.Chen; J.-W.Shi; J.-I.Chyi |
| 國立臺灣海洋大學 |
2007-11 |
Spatial manipulation of nanoacoustic waves with nanoscale spot sizes
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C.-K. Sun; K.-H. Lin; C.-M. Lai; C.-C. Pan; J.-I. Chyi; J.-W. Shi; S.-Z. Sun; C,-F. Chang |
| 國立臺灣海洋大學 |
2003-04 |
Surface band-bending effects on the optical properties of InGaN multiple quantum wells
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J. I. Chyi; L. H. Peng; C. W. Shih; C. M. Lai; C. C. Chuo |
| 中原大學 |
2003 |
Type-II Zn1-xMnxSe/ZnSe1-yTey Quantum Wells
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C. S. Yang;C. C. Cheng;M. C. Kuo;P. Y. Tseng;J. L. Shen;J. Lee;W. C. Chou;S. Jeng;C. Y. Lai;T. M. Hsu;J. I. Chyi |
| 國立中山大學 |
2000 |
Properties of Ga2O3(Gd2O3)/GaN metal-insulator-semiconductor diodes
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M. Hong;K.A. Anselm;J. Kwo;H.M. Ng;J.N. Baillargeon;A.R. Kortan;J.P. Mannaerts;A.Y. Cho;C.M. Lee;J.I. Chyi;T.S. Lay |
Showing items 11-21 of 21 (1 Page(s) Totally)
1
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