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Institution Date Title Author
臺大學術典藏 2018-09-10T07:41:14Z Growth and characterization of InAsN on InAs substrate by using RF plasma assisted gas source molecular beam epitaxy J. S. Wang,; G. R. Chen,; L. W. Sung,; H. H. Lin,; HAO-HSIUNG LIN
臺大學術典藏 2018-09-10T07:41:14Z Studies on the photoluminescence of thermal annealed InAs(N)/InGaAs quantum wells G. R. Chen,; J. S. Wang,; H. H. Lin,; HAO-HSIUNG LIN
臺大學術典藏 2018-09-10T07:41:13Z InAsN/InGaAsP multiple quantum wells on InP substrates grown by gas source molecular beam epitaxy J. S. Wang,; G. R. Chen,; L. W. Sung,; H. H. Lin,; HAO-HSIUNG LIN
臺大學術典藏 2018-09-10T07:41:12Z Ballistic electron transport in InP observed by subpicosecond time-resolved Raman spectroscopy K. T. Tsen; D. K. Ferry; J. S. Wang; C. S. Huang; H. H. Lin; HAO-HSIUNG LIN
臺大學術典藏 2018-09-10T07:41:11Z Structural and optical properties of 0.98 um InGaAs/InGaAsP strained-compensated multiple quantum well structures grown by gas-source molecular beam epitaxy J. S. Liu,; J. S. Wang,; K. Y. Hsieh,; H. H. Lin,; HAO-HSIUNG LIN
臺大學術典藏 2018-09-10T04:58:47Z Probing the electronic structures of III-V-nitride semiconductors by x-ray photoelectron spectroscopy T. S. Lay,; W. T. Kuo,; L. P. Chen,; Y. H. Lai,; H. Hung,; J. S. Wang,; J. Y. Chi,; D. K. Shih,; H. H. Lin,; HAO-HSIUNG LIN
臺大學術典藏 2018-09-10T04:35:06Z Optical properties of InAs1-xNx/In0.53Ga0.47As single quantum wells grown by gas source molecular beam epitaxy D. K. Shih,; HAO-HSIUNG LIN; H. H. Lin,; J. S. Wang,; G. R. Chen,
臺大學術典藏 2018-09-10T03:50:02Z Optical properties of as-grown and annealed of InAs(N)/ InGaAsP multiple quantum wells G. R. Chen,; H. H. Lin,; J. S. Wang,; D. K. Shih,; HAO-HSIUNG LIN
臺大學術典藏 2018-09-10T03:50:02Z Growth of InAsN/ InGaAsP multiple quantum well on InP by gas source molecular beam epitaxy J. S. Wang; H. H. Lin; L. W. Sung; G. R. Chen; HAO-HSIUNG LIN
淡江大學 2016/12 Energy relaxation dynamics in vertically coupled multi-stacked InAs/GaAs quantum dots Antaryami Mohanta; Der-Jun Jang; Shu-Kai Lu; Dah-Chin Ling; J. S. Wang

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