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Institution Date Title Author
國立交通大學 2014-12-08T15:28:26Z A novel technique to fabricate 28 nm p-MOSFETs possessing gate oxide integrity on an embedded SiGe channel without silicon surface passivation Yu, M. H.; Liao, M. H.; Huang, T. C.; Wang, L. T.; Lee, T. L.; Jang, S. M.; Cheng, H. C.

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