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Institution Date Title Author
臺大學術典藏 2018-09-10T03:26:29Z Measurement methods for technological change embodied in inputs JANG, SL; NORSWORTHY, JR
國立交通大學 2014-12-08T15:49:17Z Low-frequency noise characteristics of hot carrier-stressed buried-channel pMOSFETs Jang, SL; Chen, HK; Chang, KM
國立交通大學 2014-12-08T15:38:50Z Fabrication of trench-gate power MOSFETs by using a dual doped body region Juang, MH; Chen, WT; Ou-Yang, CI; Jang, SL; Lin, MJ; Cheng, HC

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