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Taiwan Academic Institutional Repository >
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"jang sm"
Showing items 1-10 of 26 (3 Page(s) Totally)
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| 國立交通大學 |
2019-04-02T05:59:49Z |
Improvement of water-related hot-carrier reliability by optimizing the plasma-enhanced tetra-ethoxysilane deposition process
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Lin, YM; Jang, SM; Yu, CH; Lei, TF |
| 國立交通大學 |
2019-04-02T05:59:45Z |
Plasma charging damage and water-related hot-carrier reliability in the deposition of plasma-enhanced tetraethylorthosilicate oxide
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Lin, YM; Jang, SM; Yu, CH; Lei, TF; Chen, JY |
| 國立交通大學 |
2014-12-08T15:44:39Z |
A physical model for hole direct tunneling current in P+ poly-gate PMOSFETs with ultrathin gate oxides
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Yang, KN; Huang, HT; Chang, MC; Chu, CM; Chen, YS; Chen, MJ; Lin, YM; Yu, MC; Jang, SM; Yu, DCH; Liang, MS |
| 國立交通大學 |
2014-12-08T15:43:49Z |
Dielectric and barrier properties of spin-on organic aromatic low dielectric constant polymers FLARE and SiLK
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Wu, ZC; Shiung, ZW; Wu, RG; Liu, YL; Wu, WH; Tsui, BY; Chen, MC; Chang, W; Chou, PF; Jang, SM; Hu, CH; Liang, MS |
| 國立交通大學 |
2014-12-08T15:43:49Z |
Physical and electrical characteristics of F- and C-doped low dielectric constant chemical vapor deposited oxides
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Wu, ZC; Shiung, ZW; Chiang, CC; Wu, WH; Chen, MC; Jeng, SM; Chang, W; Chou, PF; Jang, SM; Yu, CH; Liang, MS |
| 國立交通大學 |
2014-12-08T15:43:48Z |
Leakage mechanism in Cu damascene structure with methylsilane-doped low-K CVD oxide as intermetal dielectric
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Wu, ZC; Chiang, CC; Wu, WH; Chen, MC; Jeng, SM; Li, LJ; Jang, SM; Yu, CH; Liang, MS |
| 國立交通大學 |
2014-12-08T15:43:48Z |
Physical and electrical characteristics of methylsilane- and trimethylsilane-doped low dielectric constant chemical vapor deposited oxides
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Wu, ZC; Shiung, ZW; Chiang, CC; Wu, WH; Chen, MC; Jeng, SM; Chang, W; Chou, PF; Jang, SM; Yu, CH; Liang, MS |
| 國立交通大學 |
2014-12-08T15:43:46Z |
Characterization and modeling of edge direct tunneling (EDT) leakage in ultrathin gate oxide MOSFETs
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Yang, KN; Huang, HT; Chen, MJ; Lin, YM; Yu, MC; Jang, SM; Yu, DCH; Liang, MS |
| 國立交通大學 |
2014-12-08T15:40:39Z |
Physical and barrier properties of plasma-enhanced chemical vapor deposited alpha-SiC : H films from trimethylsilane and tetramethylsilane
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Chiang, CC; Chen, MC; Ko, CC; Wu, ZC; Jang, SM; Liang, MS |
| 國立交通大學 |
2014-12-08T15:40:39Z |
Physical and barrier properties of plasma enhanced chemical vapor deposition alpha-SiC : N : H films
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Chiang, CC; Wu, ZC; Wu, WH; Chen, MC; Ko, CC; Chen, HP; Jang, SM; Yu, CH; Liang, MS |
Showing items 1-10 of 26 (3 Page(s) Totally)
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