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"jung hui tsai"

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Showing items 121-130 of 294  (30 Page(s) Totally)
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Institution Date Title Author
國立高雄師範大學 2007 Integration of n- and p-channel InGaP/InGaAs doped-channel pseudomorphic HFETs Jung-Hui Tsai;Chien-Ming Li;Wen-Chau Liu;Der-Feng Guo;Shao-Yen Chiu;Wen-Shiung Lour; 蔡榮輝
國立高雄師範大學 2007 Simulated analysis for InGaP/GaAs heterostructure-emitter bipolar transistor with InGaAs/GaAs superlattice-base structure Jung-Hui Tsai;I-Hsuan Hsu;Tzu-Yen Weng;Chien-Ming Li; 蔡榮輝
國立高雄師範大學 2007 Promoted potential of heterojunction phototransistor for low-power photodetection by surface sulfur treatment Jung-Hui Tsai;Wei-Tien Chen;Hon-Rung Chen;Shao-Yen Chiu;Meng-Kai Hsu;Wen-Shiung Lour; 蔡榮輝
國立高雄師範大學 2007 Surface treatment effect on temperature-dependent properties of InGaP/GaAs heterobipolar transistors Jung-Hui Tsai;Tzu-Pin Chen;Ssu-I Fu;Shiou-Ying Cheng;Der-Feng Guo;Wen-Shiung Lour;Wen-Chau Liu; 蔡榮輝
國立高雄師範大學 2007 Characteristics improvement for an npn-heterostructure Optoelectronic switch by introducing a wide-gap layer in the collector Jung-Hui Tsai;Der-Feng Guo;Chih-Hung Yen;Wen-Shiung Lour;Wen-Chau Liu; 蔡榮輝
國立高雄師範大學 2007 Investigation of amplifying and switching characteristics in double heterostructure-emitter bipolar transistors Jung-Hui Tsai;Der-Feng Guo;Chih-Hung Yen;Wen-Shiung Lour;Wen-Chau Liu; 蔡榮輝
國立高雄師範大學 2007 Temperature effect of a heterojunction bipolar transistor with an emitter-edge-thinning structure Jung-Hui Tsai;Tzu-Pin Chen;Ssu-I Fu;Wen-Shiung Lour;Der-Feng Guo;Wen-Chau Liu; 蔡榮輝
國立高雄師範大學 2007 Characteristics of mesa- and air-type In0.5Al0.5As/In0.5Ga0.5As metamorphic HEMTs with or without a buried gate Jung-Hui Tsai;Meng-Kai Hsu;Hon-Rung Chen;Shao-Yen Chiu;Wei-Tien Chen;Wen-Chau Liu;Wen-Shiung Lour; 蔡榮輝
國立高雄師範大學 2007 A pnpn GaAs-InGaAs optoelectronic switch Jung-Hui Tsai;Der-Feng Guo;Chien-Ming Li; 蔡榮輝
國立高雄師範大學 2007 An Optoelectronic Switch with Multiple Operation States Jung-Hui Tsai;Der-Feng Guo;Tzu-Yen Weng; 蔡榮輝

Showing items 121-130 of 294  (30 Page(s) Totally)
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