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"jung hui tsai"的相關文件

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機構	日期	題名	作者
國立高雄師範大學	1997	Multiple quantized switching behaviors (MQSB) of functional heterostructure-emitter bipolar transistors (HEBT’s) with multiple carrier confinement heterostructures	Jung-Hui Tsai;Wen-Chau Liu;Jung-Hui Tsai, Lih-Wen Laih, and Shiou-Ying Cheng; 蔡榮輝
國立高雄師範大學	1997	Modeling and analysis of heterostructure-emitter and heterostructure-base transistors (HEHBT’s)	Jung-Hui Tsai;Shiou-Ying Cheng;Po-Hung Lin;Wei-Chou Wang;Jing-Yuh Chen;Wen-Chau Liu; 蔡榮輝
國立高雄師範大學	1997	A new InGaP/GaAs S-shaped negative-differential-resistance (NDR) switching for multiple-valued logic application	Jung-Hui Tsai;Wen-Chau Liu;Jung-Hui Tsai;Wen-Shiung Lour;Lih-Wen Laih;Kong-Beng Thei;Cheng-Zu Wu; 蔡榮輝
國立高雄師範大學	1997	Multiple switching phenomena of AlGaAs/InGaAs/GaAs heterostructure Transistors	Jung-Hui Tsai;Chin-Chuan Cheng;Wen-Chau Liu; 蔡榮輝
國立高雄師範大學	1997	Multiple-State Switching (MSS) Phenomenon of AlGaAs/InGaAs/GaAs Hetrostructure	Jung-Hui Tsai; 蔡榮輝
國立高雄師範大學	1997	A Novel Heterostructure-Emitter and Heterostructure-Base Transistor (HEHBT)	Jung-Hui Tsai;Wen-Chau Liu;Shiou-Ying Cheng;Wei-Chou Wang;Po-Hung Lin;Jing-Yuh Chen; 蔡榮輝
國立高雄師範大學	1997	Multiple Negative-Differential-Resistance (MNDR) of a Graded-AlxGa1-xAs/GaAs Heterostructure-Emitter Bipolar Transistor (HEBT) with a Pseudomorphic InGaAs/GaAs Base Structure	Jung-Hui Tsai;Wen-Chau Liu;Shiou-Ying Cheng;Wei-Chou Wang;Po-Hung Lin;Jing-Yuh Chen; 蔡榮輝
國立高雄師範大學	1996-06	Anomalous negative-differential-resistance (NDR) characteristics of n+-GaAs/n--GaAs/n+-In0.2Ga0.8As/i-GaAs structure	Jung-Hui Tsai;Lih-Wen Laih;Wen-Chau Liu;Wei-Chou Hsu;Yuan-Tzu Ting;Rong-Chau Liu; 蔡榮輝
國立高雄師範大學	1996-03	Characteristics of camel-gate structures with active doping channel profiles	Jung-Hui Tsai;Wen-Shiung Lour;Lih-Wen Laih;Rong-Chau Liu;Wen-Chau Liu; 蔡榮輝
國立高雄師範大學	1996	On the recombination currents effect of heterostructure-emitter bipolar transistors	Jung-Hui Tsai;Lih-Wen Laih;Hui-Jung Shih;Wen-Chau Liu;Hao-Hsiung Lin; 蔡榮輝
國立高雄師範大學	1996	AlGaAs/InGaAs/GaAs heterostructure-emitter and heterostructure-base transistor (HEHBT)	Jung-Hui Tsai;Shiou-Ying Cheng;Lih-Wen Laih;Wen-Chau Liu; 蔡榮輝
國立高雄師範大學	1996	Device linearity improvement and current enhancement utilizing high-to-low doped-channel FET's	Jung-Hui Tsai;Wen-Shiung Lour;Wen-Chau Liu;Jung-Hui Tsai;Lih-Wen Laih; 蔡榮輝
國立高雄師範大學	1996	Characteristics of functional heterostructure-emitter bipolar transistors (HEBT's)	Jung-Hui Tsai;Kong-Beng Thei;Wen-Chau Liu;Wen-Shiung Lour; 蔡榮輝
國立高雄師範大學	1996	High-performance camel-gate field effect transistor using high-medium-low doped structure	Jung-Hui Tsai;Wen-Shiung Lour;Wen-Chau Liu;Lih-Wen Laih; 蔡榮輝
國立高雄師範大學	1996	Influence of channel doping-profile on camel-gate field-effect transistors	Jung-Hui Tsai;Wen-Shiung Lour;Lih-Wen Laih;Wen-Chau Liu; 蔡榮輝
國立高雄師範大學	1996	Multiple negative-differential-resistance (NDR) of InGaAp/GaAs heterostructure-emitter bipolar transistor (HEBT)	Jung-Hui Tsai;Wen-Chau Liu;Wen-Shiung Lour;Lih-Wen Laih;Kong-Beng Thei;Cheng-Zu Wu; 蔡榮輝
國立高雄師範大學	1996	Multiple-route current-voltage (I-V) characteristics of GaAs-InGaAs metal-insulator-semiconductor (MIS) like structure for multiple-valued logic applications	Jung-Hui Tsai;Wen-Chau Liu;Lih-Wen Laih;Wen-Shiung Lour;Kun-Wei Lin;Chin-Chuan Cheng; 蔡榮輝
國立高雄師範大學	1996	Pseudomorphic step-doped-channel field-effect transistor (SDCFET)	Jung-Hui Tsai;Lih-Wen Laih;Cheng-Zu Wu;Kun-Wei Lin;Shiou-Ying Cheng;Wen-Chau Liu; 蔡榮輝
國立高雄師範大學	1996	InGaAs-GaAs Pseudomorphic Heterostructure Transistor Prepared by MOVPE	Jung-Hui Tsai;Wen-Chau Liu;Shiou-Ying Cheng;Wei-Chou Wang;Po-Hung Lin;Jing-Yuh Chen; 蔡榮輝
國立高雄師範大學	1996	Investigation of step doped channel heterostructure field-effect transistor	Jung-Hui Tsai;Wen-Chau Liu;Lih-Wen Laih;Jing-Yuh Chen;Wei-Chou Wang;Po-Hung Lin; 蔡榮輝
國立高雄師範大學	1996	A new functional AlGaAs/InGaAs/GaAs heterostructure-emitter bipolar transistors (HEHBT's)	Jung-Hui Tsai;Wen-Chau Liu;Lih-Wen Laih;H. R. Chen;Shiou-Ying Cheng;Wei-Chou Wang;Po-Hung Lin;Jing-Yuh Chen; 蔡榮輝
國立高雄師範大學	1996	Metal-insultor-semiconductor (MIS)-like field-effect-transistor for power system application	Jung-Hui Tsai;Wen-Chau Liu;Lih-Wen Laih;Wen-Shiung Lour;Kun-Wei Lin;Chin-Chuan Cheng; 蔡榮輝
國立高雄師範大學	1996	High current drivability d-doping sheet InGaP/GaAs heterostructure bipolar transistor for power system applications	Jung-Hui Tsai;Wen-Chau Liu;Wen-Shiung Lour;Kun-Wei Lin;Chin-Chuan Cheng,; 蔡榮輝
國立高雄師範大學	1996	Investigation of InGaP/GaAs multiple-differential-resistance (NDR) device prepared by MOCVD	Jung-Hui Tsai;Wen-Chau Liu;Kong-Beng Thei;Chin-Chuan Cheng;Kun-Wei Lin;H. R. Chen,; 蔡榮輝
國立高雄師範大學	1996	Characteristics of InGaP/GaAs single-heterojunction bipolar transistor with zero potential spike by d-doped sheet	Jung-Hui Tsai;Wen-Shiung Lour;Wen-Chau Liu;H. R. Chen; 蔡榮輝

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