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Showing items 11-20 of 99  (10 Page(s) Totally)
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Institution Date Title Author
國立臺灣海洋大學 2013 Luminescence studies in InxGa1-xN epitaxial layers with different indium contents T.Y. Wu; C.C. Chang; K.K. Tiong; Y.C. Lee; S.Y. Hu; L.Y. Lin; T.Y. Lin; Z.C. Feng
國立臺灣海洋大學 2012-11 High-Temperature Optical Characterization of Transition Metal Dichalcogenides by Piezoreflectance Measurements D. O. Dumcenco;Y. S. Huang;K. K. Tiong;A. Colev;C. Gherman;L. Kulyuk
國立臺灣海洋大學 2012-08 Photoluminescence characterization of vertically aligned ZnO microrods Dumitru Dumcenco; D. H. Kuo; Ying-Sheng Huang; K. K. Tiong
國立臺灣海洋大學 2012-06 Optical characterization of a strain compensated GaAs0.64Sb0.36/GaAs0.79P0.21 quantum well structure grown by metal organic vapor phase epitaxy C.T. Huang; J.D. Wu; C.F. Liu; Y.S. Huang; C.T. Wan; Y.K. Su; K.K. Tiong
國立臺灣海洋大學 2012-01 Influence of anionic substitution on the electrolyte electroreflectance study of band edge transitions in single crystal Cu2ZnSn(SxSe1−x)4 solid solutions S. Levcenco; D. Dumcenco; Y.P. Wang; Y.S. Huang; C.H. Hob; E. Arushanov; V. Tezlevan; K.K. Tiong
國立臺灣海洋大學 2012-01 Deposition and structural characterization of nanostructured RuO2 on rutile-TiO2/sapphire(100) templates by reactive radio frequency magnetron sputtering Y.M. Chen; C.N. Yeh; C.A. Chen; Y.S. Huang; H.P. Hsu; D.S. Tsai; K.K. Tiong
國立臺灣海洋大學 2012-01 Photoreflectance study of direct-gap interband transitions in Ge/SiGe multiple quantum wells with Ge-rich barriers H. P. Hsu; P. H. Wu; Y. S. Huang; D. Chrastina; G. Isella; H. von Känel; K. K. Tiong
國立臺灣海洋大學 2012-01 Temperature dependence of the direct interband transitions of a Ge/SiGe multiple-quantum-well structure with Ge-rich barriers P. H. Wu; Y. S. Huang; H. P. Hsu; D. Chrastina; G. Isella; H. von Känel; K. K. Tiong
國立臺灣海洋大學 2012 Photoluminescence and Raman scattering characterization of Cu2ZnSiQ4(Q = S, Se) single crystals S. Levcenco; D.O. Dumcenco; Y.P. Wang; J.D. Wu; Y.S. Huang; E. Arushanov; V. Tezlevan; K.K. Tiong
國立臺灣海洋大學 2012 Above-room-temperature photoluminescence from a strain-compensated Ge/Si0.15Ge0.85 multiple-quantum-well structure P. H. Wu;D. Dumcenco;Y. S. Huang;H. P. Hsu;C. H. Lai;T. Y. Lin;D. Chrastina;G. Isella;E. Gatti;K. K. Tiong

Showing items 11-20 of 99  (10 Page(s) Totally)
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