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Showing items 1-12 of 12 (1 Page(s) Totally)
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| 元智大學 |
Sep-19 |
Crystal phase control in self-catalyzed InSb nanowires using basic growth parameter V/III ratio
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李清庭; Anandan, Deepak; Nagarajan, Venkatesan; Kakkerla, Ramesh Kumar; Yu, Hung Wei; Ko, Hua Lun; Singh, Sankalp Kumar; Chang, Edward Yi |
| 元智大學 |
Jan-19 |
Growth of foreign-catalyst-free vertical InAs/InSb heterostructure nanowires on Si (111) substrate by MOCVD
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李清庭; Anandan, Deepak; Kakkerla, Ramesh Kumar; Yu, Hung Wei; Ko, Hua Lun; Nagarajan, Venkatesan; Singh, Sankalp Kumar; Chang, Edward Yi |
| 元智大學 |
Jan-19 |
Crystal structure control of Au-free InAs and InAs/GaSb heterostucture nanowires grown on Si (111) by metal-organic chemical vapor deposition
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李清庭; Kakkerla, Ramesh Kumar; Anandan, Deepak; Singh, Sankalp Kumar; Yu, Hung Wei; Dee, Chang-Fu; Majlis, Burhanuddin Yeop; Chang, Edward Yi |
| 國立交通大學 |
2019-08-02T02:15:30Z |
Optimization of InAs/GaSb core-shell nanowire structure for improved TFET performance
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Singh, Sankalp Kumar; Kakkerla, Ramesh Kumar; Joseph, H. Bijo; Gupta, Ankur; Anandan, Deepak; Nagarajan, Venkatesan; Yu, Hung Wei; Thiruvadigal, D. John; Chang, Edward Yi |
| 國立交通大學 |
2019-08-02T02:15:28Z |
Crystal phase control in self-catalyzed InSb nanowires using basic growth parameter V/III ratio
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Anandan, Deepak; Nagarajan, Venkatesan; Kakkerla, Ramesh Kumar; Yu, Hung Wei; Ko, Hua Lun; Singh, Sankalp Kumar; Lee, Ching Ting; Chang, Edward Yi |
| 國立交通大學 |
2019-04-02T06:04:29Z |
Growth and Crystal Structure Investigation of Self-catalyst InAs/GaSb Heterostructure Nanowires on Si substrate
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Kakkerla, Ramesh Kumar; Hsiao, Chih-Jen; Anandan, Deepak; Singh, Sankalp Kumar; Chang, Edward Yi |
| 國立交通大學 |
2019-04-02T05:59:07Z |
Crystal structure control of Au-free InAs and InAs/GaSb heterostucture nanowires grown on Si (111) by metal-organic chemical vapor deposition
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Kakkerla, Ramesh Kumar; Anandan, Deepak; Singh, Sankalp Kumar; Yu, Hung Wei; Lee, Ching-Ting; Dee, Chang-Fu; Majlis, Burhanuddin Yeop; Chang, Edward Yi |
| 國立交通大學 |
2019-04-02T05:58:47Z |
Growth of foreign-catalyst-free vertical InAs/InSb heterostructure nanowires on Si (111) substrate by MOCVD
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Anandan, Deepak; Kakkerla, Ramesh Kumar; Yu, Hung Wei; Ko, Hua Lun; Nagarajan, Venkatesan; Singh, Sankalp Kumar; Lee, Ching Ting; Chang, Edward Yi |
| 國立交通大學 |
2019-04-02T05:58:41Z |
Growth and Crystal Structure Investigation of InAs/GaSb Heterostructure Nanowires on Si Substrate
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Kakkerla, Ramesh Kumar; Hsiao, Chih-Jen; Anandan, Deepak; Singh, Sankalp Kumar; Chang, Sheng-Po; Pande, Krishna P.; Chang, Edward Yi |
| 國立交通大學 |
2018-08-21T05:53:31Z |
Temperature effect on the growth of Au-free InAs and InAs/GaSb heterostructure nanowires on Si substrate by MOCVD
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Kakkerla, Ramesh Kumar; Anandan, Deepak; Hsiao, Chih-Jen; Yu, Hung Wei; Singh, Sankalp Kumar; Chang, Edward Yi |
| 國立交通大學 |
2018-08-21T05:53:10Z |
Effect of Two-Step Metal Organic Chemical Vapor Deposition Growth on Quality, Diameter and Density of InAs Nanowires on Si (111) Substrate
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Yu, Hung Wei; Anandan, Deepak; Hsu, Ching Yi; Hung, Yu Chih; Su, Chun Jung; Wu, Chien Ting; Kakkerla, Ramesh Kumar; Minh Thien Huu Ha; Huynh, Sa Hoang; Tu, Yung Yi; Chang, Edward Yi |
| 國立交通大學 |
2018-08-21T05:52:47Z |
Growth and characterization of high quality N-type GaSb/GaAs heterostructure by IMF growth mode using MOCVD for low power application
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Hsiao, Chih Jen; Kakkerla, Ramesh Kumar; Chang, Po Chun; Lumbantoruan, Franky Juanda; Lee, Tsu Ting; Lin, Yueh Chin; Chang, Shoou Jinn; Chang, Edward Yi |
Showing items 1-12 of 12 (1 Page(s) Totally)
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