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| 國立交通大學 |
2019-04-02T05:59:14Z |
Charging damages to gate oxides in a helicon O-2 plasma
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Lin, W; Kang, TK; Perng, YC; Dai, BT; Cheng, HC |
| 國立交通大學 |
2014-12-08T15:49:04Z |
A novel two-step etching to suppress the charging damages during metal etching employing helicon wave plasma
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Cheng, HC; Lin, W; Kang, TK; Perng, YC; Dai, BT |
| 國立交通大學 |
2014-12-08T15:48:55Z |
Effects of helicon-wave-plasma etching on the charging damage of aluminum interconnects
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Lin, W; Kang, TK; Perng, YC; Dai, BT; Cheng, HC |
| 國立交通大學 |
2014-12-08T15:45:02Z |
Oxide thinning percolation statistical model for soft breakdown in ultrathin gate oxides
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Chen, MJ; Kang, TK; Liu, CH; Chang, YJ; Fu, KY |
| 國立交通大學 |
2014-12-08T15:45:00Z |
Forward gated-diode measurement of filled traps in high-field stressed thin oxides
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Chen, MJ; Kang, TK; Huang, HT; Liu, CH; Chang, YJ; Fu, KY |
| 國立交通大學 |
2014-12-08T15:44:25Z |
Low-frequency noise in n-channel metal-oxide-semiconductor field-effect transistors undergoing soft breakdown
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Chen, MJ; Kang, TK; Lee, YH; Liu, CH; Chang, YJ; Fu, KY |
| 國立交通大學 |
2014-12-08T15:43:21Z |
Numerical confirmation of inelastic trap-assisted tunneling (ITAT) as SILC mechanism
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Kang, TK; Chen, MJ; Liu, CH; Chang, YJ; Fan, SK |
| 國立交通大學 |
2014-12-08T15:40:42Z |
Stability investigation of single-wafer process by using a spin etcher
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Kang, TK; Wang, CC; Tsui, BY; Yang, WL; Chien, FT; Yang, SY; Chang, CY; Li, YH |
| 國立交通大學 |
2014-12-08T15:38:42Z |
Edge quantum yield in n-channel metal-oxide-semiconductor field-effect transistor
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Kang, TK; Su, KC; Chang, YJ; Chen, MJ; Yeh, SH |
| 國立交通大學 |
2014-12-08T15:37:09Z |
Optimization of back side cleaning process to eliminate copper contamination
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Chou, WY; Tsui, BY; Kuo, CW; Kang, TK |
Showing items 1-10 of 16 (2 Page(s) Totally)
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