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Institution Date Title Author
國立交通大學 2019-04-02T05:59:14Z Charging damages to gate oxides in a helicon O-2 plasma Lin, W; Kang, TK; Perng, YC; Dai, BT; Cheng, HC
國立交通大學 2014-12-08T15:49:04Z A novel two-step etching to suppress the charging damages during metal etching employing helicon wave plasma Cheng, HC; Lin, W; Kang, TK; Perng, YC; Dai, BT
國立交通大學 2014-12-08T15:48:55Z Effects of helicon-wave-plasma etching on the charging damage of aluminum interconnects Lin, W; Kang, TK; Perng, YC; Dai, BT; Cheng, HC
國立交通大學 2014-12-08T15:45:02Z Oxide thinning percolation statistical model for soft breakdown in ultrathin gate oxides Chen, MJ; Kang, TK; Liu, CH; Chang, YJ; Fu, KY
國立交通大學 2014-12-08T15:45:00Z Forward gated-diode measurement of filled traps in high-field stressed thin oxides Chen, MJ; Kang, TK; Huang, HT; Liu, CH; Chang, YJ; Fu, KY
國立交通大學 2014-12-08T15:44:25Z Low-frequency noise in n-channel metal-oxide-semiconductor field-effect transistors undergoing soft breakdown Chen, MJ; Kang, TK; Lee, YH; Liu, CH; Chang, YJ; Fu, KY
國立交通大學 2014-12-08T15:43:21Z Numerical confirmation of inelastic trap-assisted tunneling (ITAT) as SILC mechanism Kang, TK; Chen, MJ; Liu, CH; Chang, YJ; Fan, SK
國立交通大學 2014-12-08T15:40:42Z Stability investigation of single-wafer process by using a spin etcher Kang, TK; Wang, CC; Tsui, BY; Yang, WL; Chien, FT; Yang, SY; Chang, CY; Li, YH
國立交通大學 2014-12-08T15:38:42Z Edge quantum yield in n-channel metal-oxide-semiconductor field-effect transistor Kang, TK; Su, KC; Chang, YJ; Chen, MJ; Yeh, SH
國立交通大學 2014-12-08T15:37:09Z Optimization of back side cleaning process to eliminate copper contamination Chou, WY; Tsui, BY; Kuo, CW; Kang, TK

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