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Showing items 1-16 of 16 (1 Page(s) Totally)
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| 國立交通大學 |
2019-04-02T05:59:14Z |
Charging damages to gate oxides in a helicon O-2 plasma
|
Lin, W; Kang, TK; Perng, YC; Dai, BT; Cheng, HC |
| 國立交通大學 |
2014-12-08T15:49:04Z |
A novel two-step etching to suppress the charging damages during metal etching employing helicon wave plasma
|
Cheng, HC; Lin, W; Kang, TK; Perng, YC; Dai, BT |
| 國立交通大學 |
2014-12-08T15:48:55Z |
Effects of helicon-wave-plasma etching on the charging damage of aluminum interconnects
|
Lin, W; Kang, TK; Perng, YC; Dai, BT; Cheng, HC |
| 國立交通大學 |
2014-12-08T15:45:02Z |
Oxide thinning percolation statistical model for soft breakdown in ultrathin gate oxides
|
Chen, MJ; Kang, TK; Liu, CH; Chang, YJ; Fu, KY |
| 國立交通大學 |
2014-12-08T15:45:00Z |
Forward gated-diode measurement of filled traps in high-field stressed thin oxides
|
Chen, MJ; Kang, TK; Huang, HT; Liu, CH; Chang, YJ; Fu, KY |
| 國立交通大學 |
2014-12-08T15:44:25Z |
Low-frequency noise in n-channel metal-oxide-semiconductor field-effect transistors undergoing soft breakdown
|
Chen, MJ; Kang, TK; Lee, YH; Liu, CH; Chang, YJ; Fu, KY |
| 國立交通大學 |
2014-12-08T15:43:21Z |
Numerical confirmation of inelastic trap-assisted tunneling (ITAT) as SILC mechanism
|
Kang, TK; Chen, MJ; Liu, CH; Chang, YJ; Fan, SK |
| 國立交通大學 |
2014-12-08T15:40:42Z |
Stability investigation of single-wafer process by using a spin etcher
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Kang, TK; Wang, CC; Tsui, BY; Yang, WL; Chien, FT; Yang, SY; Chang, CY; Li, YH |
| 國立交通大學 |
2014-12-08T15:38:42Z |
Edge quantum yield in n-channel metal-oxide-semiconductor field-effect transistor
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Kang, TK; Su, KC; Chang, YJ; Chen, MJ; Yeh, SH |
| 國立交通大學 |
2014-12-08T15:37:09Z |
Optimization of back side cleaning process to eliminate copper contamination
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Chou, WY; Tsui, BY; Kuo, CW; Kang, TK |
| 國立交通大學 |
2014-12-08T15:03:25Z |
IMPROVEMENT OF THIN OXIDES THERMALLY GROWN ON THE REACTIVE-ION-ETCHED SILICON SUBSTRATES
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UENG, SY; WANG, PW; KANG, TK; CHAO, TS; CHEN, WH; DAI, BT; CHENG, HC |
| 國立交通大學 |
2014-12-08T15:03:25Z |
EFFECTS OF POLYSILICON ELECTRON-CYCLOTRON-RESONANCE ETCHING ON ELECTRICAL CHARACTERISTICS OF GATE OXIDES
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KANG, TK; UENG, SY; DAI, BT; CHEN, LP; CHENG, HC |
| 國立交通大學 |
2014-12-08T15:03:12Z |
EFFECTS OF POSTETCHING TREATMENTS ON ELECTRICAL CHARACTERISTICS OF THERMAL OXIDES ON REACTIVE-ION-ETCHED SILICON SUBSTRATES
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CHENG, HC; UENG, SY; WANG, PW; KANG, TK; CHAO, TS |
| 國立交通大學 |
2014-12-08T15:02:53Z |
Antenna charging effects on the electrical characteristics of polysilicon gate during electron cyclotron resonance etching
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Kang, TK; Ueng, SY; Dai, BT; Chen, LP; Cheng, HC |
| 國立交通大學 |
2014-12-08T15:02:33Z |
A novel technology to reduce the antenna charging effects during polysilicon gate electron-cyclotron-resonance etching
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Cheng, HC; Kang, TK; Ku, TK; Dai, BT; Chen, LP |
| 國立交通大學 |
2014-12-08T15:01:16Z |
Charging damages to gate oxides in a helicon O-2 plasma
|
Lin, W; Kang, TK; Perng, YC; Dai, BT; Cheng, HC |
Showing items 1-16 of 16 (1 Page(s) Totally)
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