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機構	日期	題名	作者
國立成功大學	2006-05-15	Planar GaN p-i-n photodiodes with n(+)-conductive channel formed by Si implantation	Chen, M. C.; Sheu, Jinn-Kong; Lee, Min-Lum; Kao, C. J.; Chi, Gou-Chung
國立成功大學	2006	Planar ultraviolet photodetectors formed by Si implantation into p-GaN	Chen, M. C.; Sheu, Jinn-Kong; Lee, Min-Lum; Kao, C. J.; Tun, Chun-Ju; Chi, Gou-Chung
國立成功大學	2005-09-15	Comparison of low-temperature GaN, SiO2, and SiNx as gate insulators on AlGaN/GaN heterostructure field-effect transistors	Kao, C. J.; Chen, M. C.; Tun, C. J.; Chi, Gou-Chung; Sheu, Jinn-Kong; Lai, Wei-Chih; Lee, Min-Lum; Ren, F.; Pearton, S. J.
國立成功大學	2005	Comparison of Low Temperature GaN/SiO2/Si3N4 as gate insulators on AlGaN/GaN Heterostructure Field Effect Transistors	Kao, C. J.; Chen, M. C.; Tun, C. J.; Chi, G. C.; �Sheu, �Jinn-Kong; Lai, W. C.; �Lee,� M.� L.; Ren, F.; Pearton, S. J.
國立臺灣大學	2005	Self-Assembled Conducting Block Copolymers Containing Semiconducting Nanoparticles for Photovoltaics	Chen, M-Hui; Kao, C-J; Dai, C-A; Ho,C-C; Su, W-F
國立成功大學	2004-08-23	Effect of GaN cap layer grown at a low temperature on electrical characteristics of Al0.25Ga0.75N/GaN heterojunction field-effect transistors	Kao, C. J.; Sheu, Jinn-Kong; Lai, Wei-Chi; Lee, Min-Lum; Chen, M. C.; Chi, Gou-Chung
國立成功大學	2003-08-01	Characterization of GaN Schottky barrier photodetectors with a low-temperature GaN cap layer	Lee, M. L.; Sheu, Jinn-Kong; Lai, W. C.; Su, Yan-Kuin; Chang, Shoou-Jinn; Kao, C. J.; Tun, Chun-Ju; Chen, M. G.; Chang, W. H.; Chi, Gou-Chung; Tsai, J. M.
國立成功大學	2003-08-01	Characterization of GaN Schottky barrier photodetectors with a low-temperature GaN cap layer	Lee, M. L.; Sheu, Jinn-Kong; Lai, W. C.; Chang, Shoou-Jinn; Su, Yan-Kuin; Chen, M. G.; Kao, C. J.; Chi, Gou-Chung; Tsai, J. M.
國立成功大學	2003-05	Visible-blind GaN p-i-n photodiodes with an Al0.12Ga0.88N/GaN superlattice structure	Yeh, L. S.; Lee, M. L.; Sheu, Jinn-Kong; Chen, M. G.; Kao, C. J.; Chi, Gou-Chung; Chang, Shoou-Jinn; Su, Yan-Kuin
國立成功大學	2003-05	Nitride-based ultraviolet metal-semiconductor-metal photodetectors with a low-temperature GaN layer	Sheu, Jinn-Kong; Kao, C. J.; Lee, M. L.; Lai, W. C.; Yeh, L. S.; Chi, Gou-Chung; Chang, Shoou-Jinn; Su, Yan-Kuin; Tsa, J. M.
國立成功大學	2003-04-28	GaN Schottky barrier photodetectors with a low-temperature GaN cap layer	Lee, M. L.; Sheu, J. K.; Lai, W. C.; Chang, Shoou-Jinn; Su, Yan-Kuin; Chen, M. G.; Kao, C. J.; Chi, Gou-Chung; Tsai, J. M.
國立成功大學	2003-04	GaN metal-semiconductor-metal photodetectors with low-temperature-GaN cap layers and ITO metal contacts	Chang, Shoou-Jinn; Lee, M. L.; Sheu, Jinn-Kong; Lai, W. C.; Su, Yan-Kuin; Chang, C. S.; Kao, C. J.; Chi, Gou-Chung; Tsai, J. A.
國立成功大學	2003	Characterizations of GaN Schottky barrier photodetectors with a highly-resistivity low-temperature GaN cap layer	Lee, M. L.; �Sheu, �Jinn-Kong; Lai, W. C.; Chang, S. J.; Su, Y. K.; Chen, M. G.; Kao, C. J.; Tsai, J. M.; G.C.Chi
國立成功大學	2003	Nitride-Based Near-Ultraviolet Multiple-Quantum Well Light-Emitting Diodes with AlGaN Barrier Layers	Kao, C. J.; Chang, S. J.; Su, Y. K.; Wu, L. W.; �Sheu, �Jinn-Kong; Wen, T. C.; Lai, W. C.; Tsai, J. M.; S.C. Chen
國立成功大學	2003	Low-dark-current GaN Metal-Semiconductor-Metal photodetectors with low-temperature GaN cap layer	Chang, S. J.; Lee, M. L.; �Sheu, �Jinn-Kong; Lai, W. C.; Su, Y. K.; Chang, C. S.; Kao, C. J.; Chi, G. C.; Tsai, J. M.
國立成功大學	2003	Low-dark current, high-sensitivity metal-semiconductor-metal ultraviolet photodetectors based on GaN with low-temperature GaN intermediate layer	�Sheu, �Jinn-Kong; Kao, C. J.; Lee, M. L.; Lai, W. C.; Yeh, L. S.; Chi, G. C.; Chang, S. J.; Su, Y. K.; Tsai, J. M.
國立成功大學	2002-12	GaN p-n junction diode formed by Si ion implantation into p-GaN	Lee, M. L.; Sheu, Jinn-Kong; Yeh, L. S.; Tsai, M. S.; Kao, C. J.; Tun, Chun-Ju; Chang, Shoou-Jinn; Chi, Gou-Chung
國立成功大學	2002-11-25	Planar GaN n(+)-p photodetectors formed by Si implantation into p-GaN	Sheu, Jinn-Kung; Lee, M. L.; Yeh, L. S.; Kao, C. J.; Tun, Chun-Ju; Chen, M. G.; Chi, Gou-Chung; Chang, Shoou-Jinn; Su, Yan-Kuin; Lee, C. T.
國立成功大學	2002-08	Characterization of Si implants in p-type GaN	Sheu, Jinn-Kung; Lee, M. L.; Tun, Chun-Ju; Kao, C. J.; Yeh, L. S.; Chang, Shoou-Jinn; Chi, Gou-Chung
國立成功大學	2002	Low dark current GaN-based PIN ultraviolet photodetector with AlGaN/GaN superlattice p-layer structure	Yeh, L. S.; Lee, M. L.; �Sheu, �Jinn-Kong; Chen, M. G.; Kao, C. J.; Chi, G. C.; Chang, S. J.; Su, Y. K.
淡江大學	1995-06	Time series prediction based on a novel neuro-fuzzy system	蘇木春; Su, Mu-chun; Kao, C. J.

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