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Showing items 51-60 of 66  (7 Page(s) Totally)
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Institution Date Title Author
國立成功大學 2004-08-23 Effect of GaN cap layer grown at a low temperature on electrical characteristics of Al0.25Ga0.75N/GaN heterojunction field-effect transistors Kao, C. J.; Sheu, Jinn-Kong; Lai, Wei-Chi; Lee, Min-Lum; Chen, M. C.; Chi, Gou-Chung
國立成功大學 2003-08-01 Characterization of GaN Schottky barrier photodetectors with a low-temperature GaN cap layer Lee, M. L.; Sheu, Jinn-Kong; Lai, W. C.; Su, Yan-Kuin; Chang, Shoou-Jinn; Kao, C. J.; Tun, Chun-Ju; Chen, M. G.; Chang, W. H.; Chi, Gou-Chung; Tsai, J. M.
國立成功大學 2003-08-01 Characterization of GaN Schottky barrier photodetectors with a low-temperature GaN cap layer Lee, M. L.; Sheu, Jinn-Kong; Lai, W. C.; Chang, Shoou-Jinn; Su, Yan-Kuin; Chen, M. G.; Kao, C. J.; Chi, Gou-Chung; Tsai, J. M.
國立成功大學 2003-05 Visible-blind GaN p-i-n photodiodes with an Al0.12Ga0.88N/GaN superlattice structure Yeh, L. S.; Lee, M. L.; Sheu, Jinn-Kong; Chen, M. G.; Kao, C. J.; Chi, Gou-Chung; Chang, Shoou-Jinn; Su, Yan-Kuin
國立成功大學 2003-05 Nitride-based ultraviolet metal-semiconductor-metal photodetectors with a low-temperature GaN layer Sheu, Jinn-Kong; Kao, C. J.; Lee, M. L.; Lai, W. C.; Yeh, L. S.; Chi, Gou-Chung; Chang, Shoou-Jinn; Su, Yan-Kuin; Tsa, J. M.
國立成功大學 2003-04-28 GaN Schottky barrier photodetectors with a low-temperature GaN cap layer Lee, M. L.; Sheu, J. K.; Lai, W. C.; Chang, Shoou-Jinn; Su, Yan-Kuin; Chen, M. G.; Kao, C. J.; Chi, Gou-Chung; Tsai, J. M.
國立成功大學 2003-04 GaN metal-semiconductor-metal photodetectors with low-temperature-GaN cap layers and ITO metal contacts Chang, Shoou-Jinn; Lee, M. L.; Sheu, Jinn-Kong; Lai, W. C.; Su, Yan-Kuin; Chang, C. S.; Kao, C. J.; Chi, Gou-Chung; Tsai, J. A.
國立成功大學 2003 Characterizations of GaN Schottky barrier photodetectors with a highly-resistivity low-temperature GaN cap layer Lee, M. L.; �Sheu, �Jinn-Kong; Lai, W. C.; Chang, S. J.; Su, Y. K.; Chen, M. G.; Kao, C. J.; Tsai, J. M.; G.C.Chi
國立成功大學 2003 Nitride-Based Near-Ultraviolet Multiple-Quantum Well Light-Emitting Diodes with AlGaN Barrier Layers Kao, C. J.; Chang, S. J.; Su, Y. K.; Wu, L. W.; �Sheu, �Jinn-Kong; Wen, T. C.; Lai, W. C.; Tsai, J. M.; S.C. Chen
國立成功大學 2003 Low-dark-current GaN Metal-Semiconductor-Metal photodetectors with low-temperature GaN cap layer Chang, S. J.; Lee, M. L.; �Sheu, �Jinn-Kong; Lai, W. C.; Su, Y. K.; Chang, C. S.; Kao, C. J.; Chi, G. C.; Tsai, J. M.

Showing items 51-60 of 66  (7 Page(s) Totally)
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