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Institution Date Title Author
國立成功大學 2024-10 Reset-Voltage Controlled Resistance-State and Applications of Forming-Free Fe-Doped SrTiO3 Thin-Film Memristor Lee;Ke-Jing;Wu;Cheng-Hua;Lee;Cheng-Jung;Chou;Dei-Wei;Wang;Na-Fu;Wang;Yeong-Her
國立成功大學 2023-06 Multi-Level Resistive Al/Ga2O3/ITO Switching Devices with Interlayers of Graphene Oxide for Neuromorphic Computing Wang;Li-Wen;Huang;Chih-Wei;Lee;Ke-Jing;Chu;Sheng-Yuan;Wang;Yeong-Her
國立成功大學 2022-12 Resistive Switching Memory Cell Property Improvement by Al/SrZrTiO3/Al/SrZrTiO3/ITO with Embedded Al Layer Lee;Ke-Jing;Lin;Wei-Shao;Wang;Li-Wen;Lin;Hsin-Ni;Wang;Yeong-Her
國立成功大學 2022-09 Hybrid Ferroelectric P(VDF-TrFE)/BZT Insulators for Pentacene-Based Nonvolatile Memory Applications Lee;Ke-Jing;Yang;Tsung-Yu;Chou;Dei-Wei;Wang;Yeong-Her
國立成功大學 2022-09 High Linearity Synaptic Devices Using Ar Plasma Treatment on HfO2 Thin Film with Non-Identical Pulse Waveforms Lee;Ke-Jing;Weng;Yu-Chuan;Wang;Li-Wen;Lin;Hsin-Ni;Pal;Parthasarathi;Chu;Sheng-Yuan;Lu;Darsen;Wang;Yeong-Her
國立成功大學 2022-08 Bending Resistant Multibit Memristor for Flexible Precision Inference Engine Application Pal;Parthasarathi;Lee;Ke-Jing;Thunder;Sunanda;De;Sourav;Huang;Po-Tsang;Kaempfe;Thomas;Wang;Yeong-Her
國立成功大學 2022-01 Effect of Alkaline Earth Metal on AZrO(x) (A = Mg, Sr, Ba) Memory Application Lee;Ke-Jing;Wang;Yeong-Her
國立成功大學 2021-04 Magnesium Zirconate Titanate Thin Films Used as an NO2 Sensing Layer for Gas Sensor Applications Developed Using a Sol-Gel Method Huang;Pei-Shan;Lee;Ke-Jing;Wang;Yeong-Her
國立成功大學 2021-04 Barium Titanate Nickelate Nanostructured Materials Prepared by Solution Process for Resistive Random Access Memory Application Li;Yu-An;Lee;Ke-Jing;Wang;Li-Wen;Wang;Yeong-Her
國立成功大學 2020-06 Resistive Switching Behavior of Magnesium Zirconia Nickel Nanorods Su;Tzu-Han;Lee;Ke-Jing;Wang;Li-Wen;Chang;Yu-Chi;Wang;Yeong-Her
國立成功大學 2018-04 Resistive switching properties of alkaline earth oxide-based memory devices Lee;Ke-Jing;Chang;Yu-Chi;Lee;Cheng-Jung;Wang;Li-Wen;Wang;Yeong-Her
國立成功大學 2018-02 Barium Zirconate Nickelate as the Gate Dielectric for Low-Leakage Current Organic Transistors Lee;Cheng-Jung;Lee;Ke-Jing;Chang;Yu-Chi;Wang;Li-Wen;Chou;Der-Wei;Wang;Yeong-Her
國立成功大學 2018 Bipolar Resistive Switching Characteristics in Flexible Pt/MZT/Al Memory and Ni/NbO2/Ni Selector Structure Lee;Ke-Jing;Chang;Yu-Chi;Lee;Cheng-Jung;Wang;Li-Wen;Wang;Yeong-Her
國立成功大學 2017-12 1T1R Nonvolatile Memory with Al/TiO2/Au and Sol-Gel-Processed Insulator for Barium Zirconate Nickelate Gate in Pentacene Thin Film Transistor Lee;Ke-Jing;Chang;Yu-Chi;Lee;Cheng-Jung;Wang;Li-Wen;Wang;Yeong-Her
國立成功大學 2017-06 Bipolar and rewritable switching of one diode-one resistor nonvolatile strontium titanate nickelate memory devices Lee;Ke-Jing;Chang;Yu-Chi;Lee;Cheng-Jung;Wang;Yeong-Her

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