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Showing items 166-175 of 212 (22 Page(s) Totally)
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| 國立臺灣科技大學 |
2014 |
Characterizations of Ga-doped Cu1.75Zn(Sn1-xGax) Se4 bulks
|
Kuo, D.-H.;Tsega, M. |
| 國立臺灣科技大學 |
2014 |
Development of 3.7 % efficient cu2ZnSnSe4 solar cells by selenizing Cu-Zn-Sn films deposited by DC sputtering on TiN-protected Mo/glass substrates
|
Kuo, D.-H.;Hsu, J.-T. |
| 國立臺灣科技大學 |
2013 |
Property characterizations of Cu2ZnSnSe4 and Cu2ZnSn(S,Se)4 films prepared by sputtering with single Cu-Zn-Sn target and a subsequent selenization or sulfo-selenization procedure
|
Kuo, D.-H.;Hsu, J.-P. |
| 國立臺灣科技大學 |
2013 |
Reactive sintering of Cu2ZnSnSe4 pellets at 600 ?c with double sintering aids of Sb2S3 and Te
|
Tsega, M.;Kuo, D.-H. |
| 國立臺灣科技大學 |
2013 |
Effects of selenization parameters on growth characteristics of the Cu(In,Ga)Se2 films deposited by sputtering with a Cu-In-Ga, Cu-In-Ga2Se3, or Cu-Ga-In2Se3 target and a subsequent selenization procedure at 550-700 ?c
|
Kuo, D.-H.;Tu, Y.-C.;Monsefi, M. |
| 國立臺灣科技大學 |
2013 |
Thick Inx Ga1-xN films prepared by reactive sputtering with single cermet targets
|
Li, C.-C.;Kuo, D.-H.;Hsieh, P.-W.;Huang, Y.-S. |
| 國立臺灣科技大學 |
2013 |
Hole mobility enhancement of Cu-deficient Cu1.75Zn(Sn 1-xAlx)Se4 bulks
|
Kuo, D.-H.;Tsega, M. |
| 國立臺灣科技大學 |
2013 |
Influence of Cu content on the n→ p transition of 15% Sn-doped Cu x(In,Ga)Se2 bulk materials
|
Monsefi, M.;Kuo, D.-H. |
| 國立臺灣科技大學 |
2013 |
A p → n transition for Sn-doped Cu(In,Ga)Se2 bulk materials
|
Monsefi, M.;Kuo, D.-H. |
| 國立臺灣科技大學 |
2013 |
Reactive sintering of Cu2ZnSnSe4 pellets at 600 °c with double sintering aids of Sb2S3 and Te
|
Tsega, M.;Kuo, D.-H. |
Showing items 166-175 of 212 (22 Page(s) Totally)
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