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Showing items 61-70 of 216 (22 Page(s) Totally)
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| 國立交通大學 |
2014-12-08T15:36:25Z |
High temperature stability 850-nm In0.15Al0.08Ga0.77As/Al0.3Ga0.7As vertical-cavity surface-emitting laser with single Al0.75Ga0.25As current blocking layer
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Chang, YA; Lai, FI; Yu, HC; Kuo, HC; Laih, LW; Yu, CL; Wang, SC |
| 國立交通大學 |
2014-12-08T15:36:01Z |
Emission of bright blue light from mesoporous silica with dense Si (Ge) nanocrystals
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Cho, AT; Shieh, JM; Shieh, J; Lai, YF; Dai, BT; Pan, FM; Kuo, HC; Lin, YC; Chao, KJ; Liu, PH |
| 國立交通大學 |
2014-12-08T15:27:54Z |
REDUCED COMPLEXITY SEQUENTIAL-DECODING SCHEME FOR THE MULTIPLE TRELLIS-CODED MODULATION (MTCM)
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KUO, HC; WEI, CH |
| 國立交通大學 |
2014-12-08T15:25:59Z |
Fabrication of p-side down GaN vertical ligbt emitting diodes on copper substrates by laser lift-off
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Chu, JT; Kuo, HC; Kao, CC; Huang, HW; Chu, CF; Lin, CF; Wang, SC |
| 國立交通大學 |
2014-12-08T15:25:55Z |
High performance 1.27 mu m InGaAs : Sb-GaAsP quantum wells vertical cavity surface emitting laser
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Kuo, HC; Chang, YH; Lai, FI; Lee, PT; Wang, SC |
| 國立交通大學 |
2014-12-08T15:25:53Z |
Simulation and analysis of 1300-nm In0.4Ga0.6As0.986N0.014/GaAs1-xNx quantum-well lasers with various GaAs1-xNx strain compensated barriers
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Chang, YA; Kuo, HC; Chang, YH; Wang, SC; Laih, LH |
| 國立交通大學 |
2014-12-08T15:25:47Z |
Large emitting area GaN based light emitting diode fabricated on conducting copper substrates
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Chu, JT; Liang, WD; Chu, CF; Kuo, HC; Wang, SC |
| 國立交通大學 |
2014-12-08T15:25:47Z |
InGaN-based light-emitting diode with undercut side wall
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Kao, CC; Chu, JT; Huang, HW; Peng, YC; Yu, CC; Hseih, YL; Lin, CF; Kuo, HC; Wang, SC |
| 國立交通大學 |
2014-12-08T15:25:47Z |
Fabrication of InGaN multi-quantum-well nanorod by Ni nano-mask
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Huang, HW; Hsueh, TH; Kao, CC; Chang, YH; Ou-Yang, M; Kuo, HC; Wang, SC |
| 國立交通大學 |
2014-12-08T15:25:45Z |
Improvement of kink characteristic of proton implanted VCSEL with ITO overcoating
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Lai, FI; Chang, YH; Laih, LH; Kuo, HC; Wang, SC |
Showing items 61-70 of 216 (22 Page(s) Totally)
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