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Showing items 96-120 of 216 (9 Page(s) Totally)
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| 國立交通大學 |
2014-12-08T15:19:01Z |
Enhancement in light output of InGaN-based microhole array light-emitting diodes
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Hsueh, TH; Shen, JK; Huang, HW; Chu, JY; Kao, CC; Kuo, HC; Wang, SC |
| 國立交通大學 |
2014-12-08T15:19:01Z |
High speed (> 13 GHz) modulation of 850 nm vertical cavity surface emitting lasers (VCSELs) with tapered oxide confined layer
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Chang, YH; Kuo, HC; Lai, FI; Tzeng, KF; Yu, HC; Sung, CP; Yang, HP; Wang, SC |
| 國立交通大學 |
2014-12-08T15:18:58Z |
Ultralow leakage In0.53Ga0.47As p-i-n photodetector grown on linearly graded metamorphic InxGa1-xP buffered GaAs substrate
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Lin, GR; Kuo, HC; Lin, CK; Feng, M |
| 國立交通大學 |
2014-12-08T15:18:41Z |
Temperature-dependent photoluminescence of highly strained InGaAsN/GaAs quantum wells (lambda=1.28-1.45 mu m) with GaAsP strain-compensated layers
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Lai, FI; Kuo, HC; Chang, YH; Tsai, MY; Chu, CP; Kuo, SY; Wang, SC; Tansu, N; Yeh, JY; Mawst, LJ |
| 國立交通大學 |
2014-12-08T15:18:38Z |
Improved photoluminescence of 1.26 mu m InGaAs/GaAs quantum wells assisted by Sb surfactant and indium-graded intermediate layers
|
Chang, YA; Kuo, HC; Chang, YH; Wang, SC |
| 國立交通大學 |
2014-12-08T15:18:37Z |
Fabrication and performance of blue GaN-based vertical-cavity surface emitting laser employing AlN/GaN and Ta2O5/SiO2 distributed Bragg reflector
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Kao, CC; Peng, YC; Yao, HH; Tsai, JY; Chang, YH; Chu, JT; Huang, HW; Kao, TT; Lu, TC; Kuo, HC; Wang, SC; Lin, CF |
| 國立交通大學 |
2014-12-08T15:18:32Z |
Enhanced light output of an InGaN/GaN light emitting diode with a nano-roughened p-GaN surface
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Huang, HW; Chu, JT; Kao, CC; Hseuh, TH; Lu, TC; Kuo, HC; Wang, SC; Yu, CC |
| 國立交通大學 |
2014-12-08T15:18:22Z |
Singlemode InAs quantum dot photonic crystal VCSELs
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Yang, HPD; Chang, YH; Lai, FI; Yu, HC; Hsu, YJ; Lin, G; Hsiao, RS; Kuo, HC; Wang, SC; Chi, JY |
| 國立交通大學 |
2014-12-08T15:18:22Z |
Improvement in light-output efficiency of near-ultraviolet InGaN-GaN LEDs fabricated on stripe patterned sapphire substrates
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Lee, YJ; Hsu, TC; Kuo, HC; Wang, SC; Yang, YL; Yen, SN; Chu, YT; Shen, YJ; Hsieh, MH; Jou, MJ; Lee, BJ |
| 國立交通大學 |
2014-12-08T15:18:19Z |
Fabrication and characterization of In(0.25)Ga(0.75)N/GaN multiple quantum wells embedded in nanorods
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Hsueh, TH; Sheu, JK; Huang, HW; Chang, YH; Ou-Yang, MC; Kuo, HC; Wang, SC |
| 國立交通大學 |
2014-12-08T15:18:15Z |
Low-threshold-current-density, long-wavelength, highly strained InGaAs laser grown by metalorganic chemical vapor deposition
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Chen, IL; Hsu, WC; Kuo, HC; Yu, HC; Sung, CP; Lu, CM; Chiou, CH; Wang, JM; Chang, YH; Lee, TD; Wang, JS |
| 國立交通大學 |
2014-12-08T15:18:11Z |
1.3 mu m quantum dot vertical-cavity surface-emitting laser with external light injection
|
Peng, PC; Chang, YH; Kuo, HC; Tsai, WK; Lin, G; Lin, CT; Yu, HC; Yang, HP; Hsiao, RS; Lin, KF; Chi, JY; Chi, S; Wang, SC |
| 國立交通大學 |
2014-12-08T15:18:09Z |
Increasing the extraction efficiency of AlGaInP LEDs via n-side surface roughening
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Lee, YJ; Kuo, HC; Wang, SC; Hsu, TC; Hsieh, MH; Jou, MJ; Lee, BJ |
| 國立交通大學 |
2014-12-08T15:18:06Z |
Effects of different n-electrode patterns on optical characteristics of large-area p-side-down InGaN light-emitting diodes fabricated by laser lift-off
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Chu, JT; Kao, CC; Huang, HW; Liang, WD; Chu, CF; Lu, TC; Kuo, HC; Wang, SC |
| 國立交通大學 |
2014-12-08T15:18:00Z |
Improvement in light-output efficiency of AlGaInP LEDs fabricated on stripe patterned epitaxy
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Lee, YJ; Tseng, HC; Kuo, HC; Wang, SC; Chang, CW; Hsu, TC; Yang, YL; Hsieh, MH; Jou, MJ; Lee, BJ |
| 國立交通大學 |
2014-12-08T15:17:46Z |
Growth of highly strained RnGaAs quantum wells by metalorganic chemical vapor deposition with application to vertical-cavity surface-emitting laser
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Chen, IL; Hsu, WC; Lee, TD; Kuo, HC; Su, KH; Chiou, CH; Wang, JM; Chang, YH |
| 國立交通大學 |
2014-12-08T15:17:42Z |
1.3-mu m InAs-InGaAs quantum-dot vertical-cavity surface-emitting laser with fully doped DBRs grown by MBE
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Yu, HC; Wang, JS; Su, YK; Chang, SJ; Lai, FI; Chang, YH; Kuo, HC; Sung, CP; Yang, HPD; Lin, KF; Wang, JM; Chi, JY; Hsiao, RS; Mikhrin, S |
| 國立交通大學 |
2014-12-08T15:17:41Z |
Theoretical and experimental analysis on InAlGaAs/AlGaAs active region of 850-nm vertical-cavity surface-emitting lasers
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Chang, YA; Chen, JR; Kuo, HC; Kuo, YK; Wang, SC |
| 國立交通大學 |
2014-12-08T15:17:33Z |
Effects of doping concentration and annealing temperature on properties of highly-oriented al-doped ZnO films
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Kuo, SY; Chen, WC; Lai, FI; Cheng, CP; Kuo, HC; Wang, SC; Hsieh, WF |
| 國立交通大學 |
2014-12-08T15:17:32Z |
MOCVD growth of highly strained 1.3 mu m InGaAs : Sb/GaAs vertical cavity surface emitting laser
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Chang, YA; Chu, JT; Ko, CT; Kuo, HC; Lin, CF; Wang, SC |
| 國立交通大學 |
2014-12-08T15:17:32Z |
Quaternary AlInGaN multiple quantum well 368 nm light-emitting diode
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Wang, TC; Kuo, HC; Lee, ZH; Chuo, CC; Tsai, MY; Tsai, CE; Lee, TD; Lu, TC; Chi, J |
| 國立交通大學 |
2014-12-08T15:17:31Z |
Photoluminescence of plasma enhanced chemical vapor deposition amorphous silicon oxide with silicon nanocrystals grown at different fluence ratios and substrate temperatures
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Lin, CJ; Lin, CK; Chang, CW; Chueh, YL; Kuo, HC; Diau, EWG; Chou, LJ; Lin, GR |
| 國立交通大學 |
2014-12-08T15:17:31Z |
Effect of annealing on low-threshold-current large-wavelength InGaAs quantum well vertical-cavity laser
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Chen, IL; Hsu, WC; Kuo, HC; Sung, CP; Chiou, CH; Wang, JM; Chang, YH; Yu, HC; Lee, TD |
| 國立交通大學 |
2014-12-08T15:17:29Z |
AlGaInP light-emitting diodes with stripe patterned omni-directional reflector
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Lee, YJ; Lu, TC; Kuo, HC; Wang, SC; Liou, MJ; Chang, CW; Hsu, TC; Hsieh, MH; Jou, MJ; Lee, BJ |
| 國立交通大學 |
2014-12-08T15:17:29Z |
High brightness AlGaInP-based light emitting diodes by adopting the stripe-patterned omni-directional reflector
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Lee, YJ; Lu, TC; Kuo, HC; Wang, SC; Liou, MJ; Chang, CW; Hsu, TC; Hsieh, MH; Jou, MJ; Lee, BJ |
Showing items 96-120 of 216 (9 Page(s) Totally)
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