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"kwo j"的相关文件
显示项目 211-260 / 563 (共12页)
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| 臺大學術典藏 |
2018-09-10T09:46:44Z |
Vertical-cavity and randomly scattered lasing from different thicknesses of epitaxial ZnO films grown on Y 2 O 3-buffered Si (111)
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Kuo, CC;Liu, W-R;Lin, BH;Hsieh, WF;Hsu, C-H;Lee, WC;Hong, M;Kwo, J; Kuo, CC; Liu, W-R; Lin, BH; Hsieh, WF; Hsu, C-H; Lee, WC; Hong, M; Kwo, J; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T09:46:43Z |
Surface atoms core-level shifts in single crystal GaAs surfaces: Interactions with trimethylaluminum and water prepared by atomic layer deposition
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Chiang, TH; Liu, YT; Chang, YC; Lin, TD; Wertheim, GK; Kwo, J; Hong, M; MINGHWEI HONG; Pi, TW;Lin, HY;Chiang, TH;Liu, YT;Chang, YC;Lin, TD;Wertheim, GK;Kwo, J;Hong, M; Pi, TW; Lin, HY |
| 臺大學術典藏 |
2018-09-10T09:46:43Z |
Detection of inverse spin Hall effect in epitaxial ferromagnetic Fe3Si films with normal metals Au and Pt
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Hung, HY;Luo, GY;Chiu, YC;Chang, P;Lee, WC;Lin, JG;Lee, SF;Hong, M;Kwo, J; Hung, HY; Luo, GY; Chiu, YC; Chang, P; Lee, WC; Lin, JG; Lee, SF; Hong, M; Kwo, J; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T09:44:27Z |
Ferromagnetism in cluster free, transition metal doped high κ dilute magnetic oxides: Films and nanocrystals
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Wu, C.N.; Wu, T.S.; Huang, S.Y.; Lee, W.C.; Chang, Y.H.; Soo, Y.L.; Hong, M.; Kwo, J.; Wu, C.N.; Wu, T.S.; Huang, S.Y.; Lee, W.C.; Chang, Y.H.; Soo, Y.L.; Hong, M.; Kwo, J.; SSU-YEN HUANG |
| 臺大學術典藏 |
2018-09-10T09:20:51Z |
Mapping the band profile across the Gd2O3/GaAs (100) hetero-interface by using scanning tunneling microscopy
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Huang, BC; Chiu, YP; Shih, MC; Shen, JY; Chang, P; Chang, CS; Huang, ML; Tsai, MH; Hong, M; Kwo, J; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T09:20:51Z |
TL-BASED SUPERCONDUCTING FILMS BY SPUTTERING USING ASINGLE TARGET
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Kwo, J; Bacon, DD; MINGHWEI HONG; Hong, M;Kortan, AR;Kwo, J;Bacon, DD; Hong, M; Kortan, AR |
| 臺大學術典藏 |
2018-09-10T09:20:51Z |
$\\backslash$ textit ${$In-situ$}$ MBE and ALD deposited HfO $ _ ${$2$}$ $ on In $ _ ${$0.53$}$ $ Ga $ _ ${$0.47$}$ $ As
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Lee, WC; Lin, CA; Huang, ML; Kwo, J; Chang, YH; Chang, P; Lin, TD; Hong, M; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T09:20:51Z |
PROPERTIES OF IN-SITU SUPERCONDUCTING Y1Ba2Cu2O7 x FILMS BY
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Kwo, J; Hong, M; Trevor, DJ; Fleming, RM; White, AE; Farrow, RC; Kortan, AR; Short, KT; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T09:20:51Z |
Thickness-dependent lattice relaxation and the associated optical properties of ZnO epitaxial films grown on Si (111)
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Liu, W-R; Lin, BH; Kuo, CC; Lee, WC; Hong, M; Kwo, J; Hsu, C-H; Hsieh, WF; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T09:20:51Z |
The influence of dislocations on optical and electrical properties of epitaxial ZnO on Si (111) using a $γ$-Al 2 O 3 buffer layer
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Liu, W-R; Lin, BH; Yang, S; Kuo, CC; Li, Y-H; Hsu, C-H; Hsieh, WF; Lee, WC; Hong, M; Kwo, J; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T09:20:50Z |
Room temperature ferromagnetic behavior in cluster free, Co doped Y2O3 dilute magnetic oxide films
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Wu, CN; Huang, SY; Lee, WC; Chang, YH; Wu, TS; Soo, YL; Hong, M; Kwo, J; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T09:20:50Z |
Growth mechanism of atomic layer deposited Al2O3 on GaAs (001)-4$\\times$ 6 surface with trimethylaluminum and water as precursors
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Huang, ML;Chang, YH;Lin, TD;Lin, HY;Liu, YT;Pi, TW;Hong, M;Kwo, J; Huang, ML; Chang, YH; Lin, TD; Lin, HY; Liu, YT; Pi, TW; Hong, M; Kwo, J; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T09:20:50Z |
Effective passivation of In0. 2Ga0. 8As by HfO2 surpassing Al2O3 via in-situ atomic layer deposition
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Chang, YH; Lin, CA; Liu, YT; Chiang, TH; Lin, HY; Huang, ML; Lin, TD; Pi, TW; Kwo, J; Hong, M; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T09:20:50Z |
Realization of high-quality HfO2 on In0. 53Ga0. 47As by in-situ atomic-layer-deposition
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Lin, TD; Chang, YH; Lin, CA; Huang, ML; Lee, WC; Kwo, J; Hong, M; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T09:20:50Z |
In-situ MBE and ALD deposited HfO2 on In0. 53Ga0. 47As
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Lee, WC; Lin, CA; Huang, ML; Kwo, J; Chang, YH; Chang, P; Lin, TD; Hong, M; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T09:20:50Z |
In-situ photoemission analyses of ALD-oxide/InxGa1-xAs (001) interfaces
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Huang, ML; Chang, YH; Lin, TD; Lee, WC; Chiang, TH; Lin, CA; Lin, HY; Pi, T-W; Hong, M; Kwo, J; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T09:20:50Z |
$\\backslash$ textit ${$In-situ$}$ photoemission analyses of ALD-oxide/In $ _ ${$x$}$ $ Ga $ _ ${$1-x$}$ $ As (001) interfaces
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Kwo, J; MINGHWEI HONG; Hong, M; Huang, ML; Chang, YH; Lin, TD; Lee, WC; Chiang, TH; Lin, CA; Lin, HY; Pi, T-W |
| 臺大學術典藏 |
2018-09-10T09:20:49Z |
Ge metal-oxide-semiconductor devices with Al 2 O 3/Ga 2 O 3 (Gd 2 O 3) as gate dielectric
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Chu, LK; Chiang, TH; Lin, TD; Lee, YJ; Chu, RL; Kwo, J; Hong, M; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T09:20:49Z |
Optimization of Ohmic metal contacts for advanced GaAs-based CMOS device
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Chang, WH; Chiang, TH; Lin, TD; Chen, YH; Wu, KH; Huang, TS; Hong, M; Kwo, J; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T09:18:13Z |
Thermal spin transport and applications
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SSU-YEN HUANG; Chien, C.L.; Kwo, J.; Lee, S.F.; Qu, D.; Wang, W.G.; Huang, S.Y. |
| 臺大學術典藏 |
2018-09-10T09:18:13Z |
Room temperature ferromagnetic behavior in cluster free, Co doped Y 2O 3 dilute magnetic oxide films
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Wu, C.N.; Huang, S.Y.; Lee, W.C.; Chang, Y.H.; Wu, T.S.; Soo, Y.L.; Hong, M.; Kwo, J.; SSU-YEN HUANG |
| 臺大學術典藏 |
2018-09-10T08:43:14Z |
Direct measurement of interfacial structure in epitaxial Gd2O3 on GaAs (0 0 1) using scanning tunneling microscopy
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Chiu, Y.P.;Shih, M.C.;Huang, B.C.;Shen, J.Y.;Huang, M.L.;Lee, W.C.;Chang, P.;Chiang, T.H.;Hong, M.;Kwo, J.; Chiu, Y.P.; Shih, M.C.; Huang, B.C.; Shen, J.Y.; Huang, M.L.; Lee, W.C.; Chang, P.; Chiang, T.H.; Hong, M.; Kwo, J.; YA-PING CHIU |
| 臺大學術典藏 |
2018-09-10T08:40:14Z |
Low interfacial trap density and sub-nm equivalent oxide thickness in In0. 53Ga0. 47As (001) metal-oxide-semiconductor devices using molecular beam deposited HfO2/Al2O3 as gate dielectrics
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Chu, LK;Merckling, C;Alian, A;Dekoster, J;Kwo, J;Hong, M;Caymax, M;Heyns, Marc; Chu, LK; Merckling, C; Alian, A; Dekoster, J; Kwo, J; Hong, M; Caymax, M; Heyns, Marc; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T08:40:14Z |
Atomic-layer-deposited Al 2 O 3 and HfO 2 on GaN: a comparative study on interfaces and electrical characteristics
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Chang, YC;Huang, ML;Chang, YH;Lee, YJ;Chiu, HC;Kwo, J;Hong, M; Chang, YC; Huang, ML; Chang, YH; Lee, YJ; Chiu, HC; Kwo, J; Hong, M; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T08:40:13Z |
The growth of an epitaxial ZnO film on Si (111) with a Gd2O3 (Ga2O3) buffer layer
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Lin, BH;Liu, WR;Yang, S;Kuo, CC;Hsu, C-H;Hsieh, WF;Lee, WC;Lee, YJ;Hong, M;Kwo, J; Lin, BH; Liu, WR; Yang, S; Kuo, CC; Hsu, C-H; Hsieh, WF; Lee, WC; Lee, YJ; Hong, M; Kwo, J; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T08:40:13Z |
Epitaxial stabilization of a monoclinic phase in Y 2 O 3 films on c-plane GaN
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Chang, WH;Chang, P;Lee, WC;Lai, TY;Kwo, J;Hsu, C-H;Hong, JM;Hong, M; Chang, WH; Chang, P; Lee, WC; Lai, TY; Kwo, J; Hsu, C-H; Hong, JM; Hong, M; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T08:40:13Z |
Electrical properties and interfacial chemical environments of in situ atomic layer deposited Al 2 O 3 on freshly molecular beam epitaxy grown GaAs
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Chang, YH;Huang, ML;Chang, P;Lin, CA;Chu, YJ;Chen, BR;Hsu, CL;Kwo, J;Pi, TW;Hong, M; Chang, YH; Huang, ML; Chang, P; Lin, CA; Chu, YJ; Chen, BR; Hsu, CL; Kwo, J; Pi, TW; Hong, M; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T08:40:12Z |
MBE—Enabling technology beyond Si CMOS
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Chang, P;Lee, WC;Lin, TD;Hsu, CH;Kwo, J;Hong, M; Chang, P; Lee, WC; Lin, TD; Hsu, CH; Kwo, J; Hong, M; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T08:40:12Z |
High-resolution core-level photoemission study of CF ${$sub 4$}$-treated Gd ${$sub 2$}$ O ${$sub 3$}$(Ga ${$sub 2$}$ O ${$sub 3$}$) gate dielectric on Ge probed by synchrotron radiation
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Pi, T-W;Huang, ML;Kwo, J;Lee, WC;Chu, LK;Lin, TD;Chiang, TH;Wang, YC;Wu, YD;Hong, M; Pi, T-W; Huang, ML; Kwo, J; Lee, WC; Chu, LK; Lin, TD; Chiang, TH; Wang, YC; Wu, YD; Hong, M; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T08:40:12Z |
InGaAs and Ge MOSFETs with high $κ$ dielectrics
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Lee, WC;Chang, P;Lin, TD;Chu, LK;Chiu, HC;Kwo, J;Hong, M; Lee, WC; Chang, P; Lin, TD; Chu, LK; Chiu, HC; Kwo, J; Hong, M; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T08:40:12Z |
H 2 S molecular beam passivation of Ge (001)
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Merckling, C;Chang, YC;Lu, CY;Penaud, J;El-Kazzi, M;Bellenger, F;Brammertz, G;Hong, M;Kwo, J;Meuris, M;others; Merckling, C; Chang, YC; Lu, CY; Penaud, J; El-Kazzi, M; Bellenger, F; Brammertz, G; Hong, M; Kwo, J; Meuris, M; others; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T08:40:12Z |
In situ atomic layer deposition and synchrotron-radiation photoemission study of Al 2 O 3 on pristine n-GaAs (001)-4$\\times$ 6 surface
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Chang, YH;Huang, ML;Chang, P;Shen, JY;Chen, BR;Hsu, CL;Pi, TW;Hong, Ma;Kwo, J; Chang, YH; Huang, ML; Chang, P; Shen, JY; Chen, BR; Hsu, CL; Pi, TW; Hong, Ma; Kwo, J; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T08:40:12Z |
Defect density reduction of the Al 2 O 3/GaAs (001) interface by using H 2 S molecular beam passivation
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Merckling, C;Chang, YC;Lu, CY;Penaud, J;Brammertz, G;Scarrozza, M;Pourtois, G;Kwo, J;Hong, M;Dekoster, J;others; Merckling, C; Chang, YC; Lu, CY; Penaud, J; Brammertz, G; Scarrozza, M; Pourtois, G; Kwo, J; Hong, M; Dekoster, J; others; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T08:40:11Z |
Electronic structures of Ga2O3 (Gd2O3) gate dielectric on n-Ge (001) as grown and after CF4 plasma treatment: A synchrotron-radiation photoemission study
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Wu, YD; Hong, M; Kwo, J; MINGHWEI HONG; Wang, YC; Chiang, TH; Lin, TD; Chu, LK; Huang, ML; Lee, WC; Pi, T-W; Pi, T-W;Lee, WC;Huang, ML;Chu, LK;Lin, TD;Chiang, TH;Wang, YC;Wu, YD;Hong, M;Kwo, J |
| 臺大學術典藏 |
2018-09-10T08:40:11Z |
Direct determination of flat-band voltage for metal/high $κ$ oxide/semiconductor heterointerfaces by electric-field-induced second-harmonic generation
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Chang, C-L;Lee, WC;Chu, LK;Hong, M;Kwo, J;Chang, Y-M; Chang, C-L; Lee, WC; Chu, LK; Hong, M; Kwo, J; Chang, Y-M; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T08:40:11Z |
Strong crystal anisotropy of magneto-transport property in Fe 3 Si epitaxial film
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Hung, HY;Huang, SY;Chang, P;Lin, WC;Liu, YC;Lee, SF;Hong, M;Kwo, J; Hung, HY; Huang, SY; Chang, P; Lin, WC; Liu, YC; Lee, SF; Hong, M; Kwo, J; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T08:40:11Z |
Achieving very high drain current of 1.23 mA/$μ$m in a 1-$μ$m-gate-length self-aligned inversion-channel MBE-Al 2 O 3/Ga 2 O 3 (Gd 2 O 3)/In 0.75 Ga 0.25 As MOSFET
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Lin, TD;Chang, P;Wu, YD;Chiu, HC;Kwo, J;Hong, M; Lin, TD; Chang, P; Wu, YD; Chiu, HC; Kwo, J; Hong, M; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T08:40:11Z |
Low interfacial density of states around midgap in MBE-Ga 2 O 3 (Gd 2 O 3)/In 0.2 Ga 0.8 As
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Lin, CA;Chiu, HC;Chiang, TH;Chang, YC;Lin, TD;Kwo, J;Wang, W-E;Dekoster, J;Heyns, M;Hong, M; Lin, CA; Chiu, HC; Chiang, TH; Chang, YC; Lin, TD; Kwo, J; Wang, W-E; Dekoster, J; Heyns, M; Hong, M; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T08:40:11Z |
Self-aligned inversion-channel In0. 2Ga0. 8As metal-oxide-semiconductor field-effect transistor with molecular beam epitaxy Al2O3/Ga2O3 (Gd2O3) as the gate dielectric
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Chang, WH;Chiang, TH;Wu, YD;Hong, M;Lin, CA;Kwo, J; Chang, WH; Chiang, TH; Wu, YD; Hong, M; Lin, CA; Kwo, J; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T08:40:10Z |
Atomic-scale determination of band offsets at the Gd2O3/GaAs (100) hetero-interface using scanning tunneling spectroscopy
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Kwo, J; MINGHWEI HONG; Chiu, Ya-Ping;Huang, BC;Shih, MC;Shen, JY;Chang, P;Chang, CS;Huang, ML;Tsai, M-H;Hong, M;Kwo, J; Chiu, Ya-Ping; Huang, BC; Shih, MC; Shen, JY; Chang, P; Chang, CS; Huang, ML; Tsai, M-H; Hong, M |
| 臺大學術典藏 |
2018-09-10T08:40:10Z |
Magnetization reversal processes of epitaxial Fe3Si films on GaAs (001)
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Liu, YC;Chang, P;Huang, SY;Chang, LJ;Lin, WC;Lee, SF;Hong, M;Kwo, J; Liu, YC; Chang, P; Huang, SY; Chang, LJ; Lin, WC; Lee, SF; Hong, M; Kwo, J; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T08:40:10Z |
Room temperature ferromagnetism in cluster free, Co doped Y2 O 3 dilute magnetic oxide
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Wu, CN;Huang, SY;Lin, WC;Wu, TS;Soo, YL;Lee, WC;Lee, YJ;Chang, YH;Hong, M;Kwo, J; Wu, CN; Huang, SY; Lin, WC; Wu, TS; Soo, YL; Lee, WC; Lee, YJ; Chang, YH; Hong, M; Kwo, J |
| 臺大學術典藏 |
2018-09-10T08:40:10Z |
Atomic-scale evolution of interfacial electronic band alignment in epitaxial Gd2 O 3 on GaAs (100)
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Chang, CS; Huang, ML; Hong, M; Kwo, J; MINGHWEI HONG; Huang, BC;Chiu, YP;Shih, MC;Shen, JY;Chang, P;Chiang, TH;Chang, CS;Huang, ML;Hong, M;Kwo, J; Huang, BC; Chiu, YP; Shih, MC; Shen, JY; Chang, P; Chiang, TH |
| 臺大學術典藏 |
2018-09-10T08:40:10Z |
Direct measurement of interfacial structure in epitaxial Gd 2 O 3 on GaAs (001) using scanning tunneling microscopy
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Chiang, TH; Hong, M; Kwo, J; MINGHWEI HONG; Chiu, Ya-Ping;Shih, MC;Huang, BC;Shen, JY;Huang, ML;Lee, WC;Chang, P;Chiang, TH;Hong, M;Kwo, J; Chiu, Ya-Ping; Shih, MC; Huang, BC; Shen, JY; Huang, ML; Lee, WC; Chang, P |
| 臺大學術典藏 |
2018-09-10T08:36:30Z |
Magnetization reversal processes of epitaxial Fe3Si films on GaAs(001)
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SSU-YEN HUANG; Kwo, J.; Hong, M.; Chang, L.J.; Lin, W.C.; Lee, S.F.; Huang, S.Y.; Chang, P.; Liu, Y.C.; Liu, Y.C.;Chang, P.;Huang, S.Y.;Chang, L.J.;Lin, W.C.;Lee, S.F.;Hong, M.;Kwo, J. |
| 臺大學術典藏 |
2018-09-10T08:36:30Z |
Intrinsic spin-dependent thermal transport
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Huang, S.Y.;Wang, W.G.;Lee, S.F.;Kwo, J.;Chien, C.L.; Huang, S.Y.; Wang, W.G.; Lee, S.F.; Kwo, J.; Chien, C.L.; SSU-YEN HUANG |
| 臺大學術典藏 |
2018-09-10T08:36:29Z |
Strong crystal anisotropy of magneto-transport property in Fe3Si epitaxial film
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Hung, H.Y.;Huang, S.Y.;Chang, P.;Lin, W.C.;Liu, Y.C.;Lee, S.F.;Hong, M.;Kwo, J.; Hung, H.Y.; Huang, S.Y.; Chang, P.; Lin, W.C.; Liu, Y.C.; Lee, S.F.; Hong, M.; Kwo, J.; SSU-YEN HUANG |
| 臺大學術典藏 |
2018-09-10T08:12:53Z |
Drain current enhancement and negligible current collapse in GaN MOSFETs with atomic-layer-deposited HfO 2 as a gate dielectric
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Chang, YC;Chang, WH;Chang, YH;Kwo, J;Lin, YS;Hsu, SH;Hong, JM;Tsai, CC;Hong, M; Chang, YC; Chang, WH; Chang, YH; Kwo, J; Lin, YS; Hsu, SH; Hong, JM; Tsai, CC; Hong, M; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T08:12:53Z |
Engineering of threshold voltages in molecular beam epitaxy-grown Al2O3/Ga2O3 (Gd2O3)/In0. 2Ga0. 8As
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Wu, YD;Lin, TD;Chiang, TH;Chang, YC;Chiu, HC;Lee, YJ;Hong, M;Lin, CA;Kwo, J; Wu, YD; Lin, TD; Chiang, TH; Chang, YC; Chiu, HC; Lee, YJ; Hong, M; Lin, CA; Kwo, J; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T08:12:53Z |
Self-aligned inversion-channel In 0.75 Ga 0.25 As metal-oxide-semiconductor field-effect-transistors using UHV-Al 2 O 3/Ga 2 O 3 (Gd 2 O 3) and ALD-Al 2 O 3 as gate dielectrics
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Lin, TD;Chiu, HC;Chang, P;Chang, YH;Wu, YD;Hong, M;Kwo, J; Lin, TD; Chiu, HC; Chang, P; Chang, YH; Wu, YD; Hong, M; Kwo, J; MINGHWEI HONG |
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