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Showing items 281-305 of 563 (23 Page(s) Totally)
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| 臺大學術典藏 |
2018-09-10T07:34:19Z |
High $κ$ dielectric single-crystal monoclinic Gd 2 O 3 on GaN with excellent thermal, structural, and electrical properties
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Chang, WH;Lee, CH;Chang, P;Chang, YC;Lee, YJ;Kwo, J;Tsai, CC;Hong, JM;Hsu, C-H;Hong, M; Chang, WH; Lee, CH; Chang, P; Chang, YC; Lee, YJ; Kwo, J; Tsai, CC; Hong, JM; Hsu, C-H; Hong, M; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T07:34:19Z |
Energy-band parameters of atomic layer deposited Al 2 O 3 and HfO 2 on In x Ga As
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Huang, ML;Chang, YC;Chang, YH;Lin, TD;Kwo, J;Hong, M; Huang, ML; Chang, YC; Chang, YH; Lin, TD; Kwo, J; Hong, M; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T07:34:19Z |
Structure of epitaxial Gd 2 O 3 films grown on GaAs (100)
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Kortan, AR; Hong, M; Kwo, J; Mannaerts, JP; Kopylov, N; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T07:34:19Z |
Electrical response of superconducting YBa2Cu3O7- $δ$ to light
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Brocklesby, Wo S;Monroe, Don;Levi, AFJ;Hong, M;Liou, Sy\\_Hwang;Kwo, J;Rice, CE;Mankiewich, PM;Howard, RE; Brocklesby, Wo S; Monroe, Don; Levi, AFJ; Hong, M; Liou, Sy\\_Hwang; Kwo, J; Rice, CE; Mankiewich, PM; Howard, RE; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T07:34:18Z |
Research advances on III-V MOSFET electronics beyond Si CMOS
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Kwo, J;Hong, M; Kwo, J; Hong, M; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T07:34:18Z |
Ga2O3 (Gd2O3) on Ge without interfacial layers—energy band parameters and metal oxide semiconductor devices
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Chu, LK;Lin, TD;Huang, ML;Chu, RL;Chang, CC;Kwo, J;Hong, M; Chu, LK; Lin, TD; Huang, ML; Chu, RL; Chang, CC; Kwo, J; Hong, M; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T07:34:18Z |
Ga 2 O 3 (Gd 2 O 3)/GaAs power MOSFETs
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Wang, YC; Hong, M; Kuo, JM; Mannaerts, JP; Tsai, HS; Kwo, J; Krajewski, JJ; Chen, YK; Cho, AY; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T07:34:18Z |
Passivation of GaAs using gallium-gadolinium oxides
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Masaitis, RL; Sergent, AM; MINGHWEI HONG; Opila, RL; Kwo, J; Murphy, DW; Hong, M; Mannaerts, JP |
| 臺大學術典藏 |
2018-09-10T07:34:17Z |
Depletion-mode In 0.2 Ga 0.8 As/GaAs MOSFET with molecular beam epitaxy grown Al 2 O 3/Ga 2 O 3 (Gd 2 O 3) as gate dielectrics
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Lin, CA;Lin, TD;Chiang, TH;Chiu, HC;Chang, P;Hong, M;Kwo, J; Lin, CA; Lin, TD; Chiang, TH; Chiu, HC; Chang, P; Hong, M; Kwo, J; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T07:34:17Z |
GaN on Si with nm-thick single-crystal Sc 2 O 3 as a template using molecular beam epitaxy
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Lee, WC;Lee, YJ;Kwo, J;Hsu, CH;Lee, CH;Wu, SY;Ng, HM;Hong, M; Lee, WC; Lee, YJ; Kwo, J; Hsu, CH; Lee, CH; Wu, SY; Ng, HM; Hong, M; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T07:34:17Z |
Molecular beam epitaxy-grown Al 2 O 3/HfO 2 high-$κ$ dielectrics for germanium
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Lee, WC;Chin, BH;Chu, LK;Lin, TD;Lee, YJ;Tung, LT;Lee, CH;Hong, M;Kwo, J; Lee, WC; Chin, BH; Chu, LK; Lin, TD; Lee, YJ; Tung, LT; Lee, CH; Hong, M; Kwo, J; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T07:34:17Z |
Advances in GaAs Mosfet's Using Ga 2 O 3 (Gd 2 O 3) as Gate Oxide
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Wang, YC; Hong, M; Kuo, JM; Mannaerts, JP; Kwo, J; Tsai, HS; Krajewski, JJ; Weiner, JS; Chen, YK; Cho, AY; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T07:34:17Z |
GaN metal-oxide-semiconductor diodes with molecular beam epitaxy-Al 2 O 3 as a template followed by atomic layer deposition growth
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Chang, YH;Chiu, HC;Chang, WH;Kwo, J;Tsai, CC;Hong, JM;Hong, M; Chang, YH; Chiu, HC; Chang, WH; Kwo, J; Tsai, CC; Hong, JM; Hong, M; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T07:34:16Z |
In-situ growth of Y 1 Ba 2 Cu 3 O 7-x films by molecular beam epitaxy with an activated oxygen source
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Kwo, J;Hong, M;Trevor, DJ;Fleming, RM;White, AE;Mannaerts, JP;Farrow, RC;Kortan, AR;Short, KT; Kwo, J; Hong, M; Trevor, DJ; Fleming, RM; White, AE; Mannaerts, JP; Farrow, RC; Kortan, AR; Short, KT; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T07:34:16Z |
The (Ga 2 O 3) 1- x (Gd 2 O 3) x, Oxides with x= 0-1.0 for GaAs Passivation
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Kwo, J; Hong, M; Kortan, AR; Murphy, DW; Mannaerts, JP; Sergent, AM; Wang, YC; Hsieh, KC; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T07:34:16Z |
Superlattice modulation and epitaxy of Tl2Ba2Ca2Cu3O10 thin films grown on MgO and SrTiO3 substrates
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Chen, CH;Hong, M;Werder, DJ;Kwo, J;Liou, Sy\\_Hwang;Bacon, DD; Chen, CH; Hong, M; Werder, DJ; Kwo, J; Liou, Sy\\_Hwang; Bacon, DD; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T07:34:16Z |
Inversion-channel enhancement-mode GaAs MOSFETs with regrown source and drain contacts
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Liao, Chichih;Cheng, Donald;Cheng, Chienchia;Cheng, KY;Feng, Milton;Chiang, TH;Kwo, J;Hong, M; Liao, Chichih; Cheng, Donald; Cheng, Chienchia; Cheng, KY; Feng, Milton; Chiang, TH; Kwo, J; Hong, M; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T07:34:16Z |
Semiconductor-insulator interfaces
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MINGHWEI HONG; Hong, M; Liu, CT; Reese, H; Kwo, J |
| 臺大學術典藏 |
2018-09-10T07:34:15Z |
Properties of superconducting Tl 2 Ba 2 Ca 2 Cu 3 O 10 films by sputtering
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Hong, M;Kwo, J;Chen, CH;Kortan, AR;Bacon, DD;Liou, SH; Hong, M; Kwo, J; Chen, CH; Kortan, AR; Bacon, DD; Liou, SH; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T07:34:15Z |
PHYSICAL PROCESSING EFFECTS ON POLYCRYSTALLINE YBa 2 Cu 3 Ox
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Ford, WK;erson, J;Rubenacker, GV;Drumheller, John E;Chen, CT;Hong, M;Kwo, J;Liou, SH; Ford, WK; erson, J; Rubenacker, GV; Drumheller, John E; Chen, CT; Hong, M; Kwo, J; Liou, SH; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T07:34:15Z |
Structure of Single-Crystal Gd 2 O 3 Films on GaAs (100)
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Kortan, AR; Hong, M; Kwo, J; Mannaerts, JP; Kopylov, N; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T07:34:15Z |
Surface exciton polariton in monoclinic HfO2: an electron energy-loss spectroscopy study
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Liou, SC;Chu, MW;Lee, YJ;Hong, M;Kwo, J;Chen, CH; Liou, SC; Chu, MW; Lee, YJ; Hong, M; Kwo, J; Chen, CH; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T07:34:15Z |
Energy Band Offsets at a Ga 2 O 3 (Gd 2 O 3)-GaAs Interface
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MINGHWEI HONG; Huang, DJ; Lay, TS; Hong, M; Kwo, J; Mannaerts, JP; Hung, Wei-Hsiu |
| 臺大學術典藏 |
2018-09-10T07:34:14Z |
Self-aligned inversion channel In 0.53 Ga 0.47 As n-MOSFETs with ALD-Al 2 O 3 and MBE-Al 2 O 3/Ga 2 O 3 (Gd 2 O 3) as gate dielectrics
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Chiu, HC;Lin, TD;Chang, P;Lee, WC;Chiang, CH;Kwo, J;Lin, YS;Hsu, Shawn SH;Tsai, W;Hong, M; Chiu, HC; Lin, TD; Chang, P; Lee, WC; Chiang, CH; Kwo, J; Lin, YS; Hsu, Shawn SH; Tsai, W; Hong, M; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T07:34:14Z |
Properties of in-Situ Superconducting Y1Ba2Cu3O7-x Films by Molecular Beam Epitaxy with an Activated Oxygen Source
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Kwo, J;Hong, M;Trevor, DJ;Fleming, RM;White, AE;Farrow, RC;Kortan, AR;Short, KT; Kwo, J; Hong, M; Trevor, DJ; Fleming, RM; White, AE; Farrow, RC; Kortan, AR; Short, KT; MINGHWEI HONG |
Showing items 281-305 of 563 (23 Page(s) Totally)
<< < 7 8 9 10 11 12 13 14 15 16 > >>
View [10|25|50] records per page
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