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"kwo j"的相關文件
顯示項目 346-355 / 563 (共57頁)
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| 臺大學術典藏 |
2018-09-10T07:01:21Z |
Self-aligned inversion n-channel In 0.2 Ga 0.8 As/GaAs metal-oxide-semiconductor field-effect-transistors with TiN gate and Ga 2 O 3 (Gd 2 O 3) dielectric
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Chen, CP; Lin, TD; Lee, YJ; Chang, YC; Hong, M; Kwo, J; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T07:01:21Z |
Structural properties of Ga2O3 (Gd2O3)-GaAs interfaces
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Hong, M; Marcus, MA; Kwo, J; Mannaerts, JP; Sergent, AM; Chou, LJ; Hsieh, KC; Cheng, KY; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T07:01:20Z |
Oxide-GaAs interfacial electronic properties characterized by modulation spectroscopy of photoreflectance
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Hwang, JS;Wang, YC;Chou, WY;Tyan, SL;Hong, M;Mannaerts, JP;Kwo, J;others; Hwang, JS; Wang, YC; Chou, WY; Tyan, SL; Hong, M; Mannaerts, JP; Kwo, J; others; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T07:01:20Z |
Magnetic superlattices
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Kwo, J;Hong, M;McWhan, DB;Yafet, Y;Fleming, RM;DiSalvo, FJ;Waszczak, JV;Majkrzak, CF;Gibbs, D;Goldmann, AI;others; Kwo, J; Hong, M; McWhan, DB; Yafet, Y; Fleming, RM; DiSalvo, FJ; Waszczak, JV; Majkrzak, CF; Gibbs, D; Goldmann, AI; others; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T07:01:20Z |
Transmission electron microscopy characterization of HfO2/GaAs (001) heterostructures grown by molecular beam epitaxy
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Liou, SC; Chu, M-W; Chen, CH; Lee, YJ; Chang, P; Lee, WC; Hong, M; Kwo, J; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T07:01:20Z |
Oxide scalability in Al2O3/Ga2O3 (Gd2O3)/In0. 20Ga0. 80As/GaAs heterostructures
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Shiu, KH; Chiang, CH; Lee, YJ; Lee, WC; Chang, P; Tung, LT; Hong, M; Kwo, J; Tsai, W; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T07:01:20Z |
High critical current superconducting Bi-Sr-Ca-Cu-O films by sputtering
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Hong, M;Kwo, J;Yeh, J-J; Hong, M; Kwo, J; Yeh, J-J; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T07:01:20Z |
High-quality nanothick single-crystal Y (2) O (3) films epitaxially grown on Si (111): Growth and structural characteristics
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Lee, YJ; Lee, WC; Nieh, CW; Yang, ZK; Kortan, AR; Hong, M; Kwo, J; Hsu, C-H; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T07:01:19Z |
Si metal-oxide-semiconductor devices with high kappa HfO2 fabricated using a novel MBE template approach followed by atomic layer deposition
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Pan, CH; Kwo, J; Lee, KY; Lee, WC; Chu, LK; Huang, ML; Lee, YJ; Hong, M; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T07:01:19Z |
Self-aligned inversion-channel and D-mode InGaAs MOSFET using Al 2 O 3/Ga 2 O 3 (Gd 2 O 3 as gate dielectrics
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Lin, TD; Chen, Christine P; Chiu, HC; Chang, Peter; Lin, CA; Hong, M; Kwo, J; Tsai, W; MINGHWEI HONG |
顯示項目 346-355 / 563 (共57頁)
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