| 臺大學術典藏 |
2021-07-26T09:44:18Z |
Enhancement of effective dielectric constant using high-temperature mixed and sub-nano-laminated atomic layer deposited Y2O3/Al2O3 on GaAs(001)
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Lin K.Y;Young L.B;Cheng C.K;Chen K.H;Lin Y.H;Wan H.W;Cai R.F;Lo S.C;Li M.Y;Kwo J;Hong M.; Lin K.Y; CHIA-KUEN CHENG et al. |
| 臺大學術典藏 |
2021-07-26T09:44:18Z |
A new stable, crystalline capping material for topological insulators
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Lin H.Y;Cheng C.K;Chen K.H.M;Tseng C.C;Huang S.W;Chang M.T;Tseng S.C;Hong M;Kwo J.; Lin H.Y; Cheng C.K; Chen K.H.M; Tseng C.C; Huang S.W; Chang M.T; Tseng S.C; Hong M; Kwo J.; CHIA-KUEN CHENG |
| 臺大學術典藏 |
2021-07-26T09:44:18Z |
Atomic layer deposited single-crystal hexagonal perovskite YAlO3 epitaxially on GaAs(111)A
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Young L.B;Cheng C.-K;Lu G.-J;Lin K.-Y;Lin Y.-H;Wan H.-W;Li M.-Y;Cai R.-F;Lo S.-C;Hsu C.-H;Kwo J;Hong M.; Young L.B; CHIA-KUEN CHENG et al. |
| 臺大學術典藏 |
2021-07-26T09:44:17Z |
Strongly exchange-coupled and surface-state-modulated magnetization dynamics in Bi2Se3/yttrium iron garnet heterostructures
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Fanchiang Y.T;Chen K.H.M;Tseng C.C;Chen C.C;Cheng C.K;Yang S.R;Wu C.N;Lee S.F;Hong M;Kwo J.; Fanchiang Y.T; Chen K.H.M; Tseng C.C; Chen C.C; Cheng C.K; Yang S.R; Wu C.N; Lee S.F; Hong M; Kwo J.; CHIA-KUEN CHENG |
| 臺大學術典藏 |
2021-07-26T09:44:17Z |
Low-Temperature-Grown Single-Crystal Si Epitaxially on Ge, Followed by Direct Deposition of High-κ Dielectrics-Attainment of Low Interfacial Traps and Highly Reliable Ge MOS
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Wan H.-W;Hong Y.-J;Cheng Y.-T;Cheng C.-K;Hsu C.-H;Wu C.-T;Pi T.-W;Kwo J;Hong M.; Wan H.-W; Hong Y.-J; Cheng Y.-T; Cheng C.-K; Hsu C.-H; Wu C.-T; Pi T.-W; Kwo J; Hong M.; CHIA-KUEN CHENG |
| 臺大學術典藏 |
2021-07-26T09:44:17Z |
High-quality thulium iron garnet films with tunable perpendicular magnetic anisotropy by off-axis sputtering – correlation between magnetic properties and film strain
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Wu C.N;Tseng C.C;Fanchiang Y.T;Cheng C.K;Lin K.Y;Yeh S.L;Yang S.R;Wu C.T;Liu T;Wu M;Hong M;Kwo J.; Wu C.N; CHIA-KUEN CHENG et al. |
| 臺大學術典藏 |
2021-07-26T09:44:17Z |
GaAs metal-oxide-semiconductor push with molecular beam epitaxy Y2O3 – In comparison with atomic layer deposited Al2O3
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Wan H.W;Lin K.Y;Cheng C.K;Su Y.K;Lee W.C;Hsu C.H;Pi T.W;Kwo J;Hong M.; Wan H.W; Lin K.Y; Cheng C.K; Su Y.K; Lee W.C; Hsu C.H; Pi T.W; Kwo J; Hong M.; CHIA-KUEN CHENG |
| 臺大學術典藏 |
2021-07-26T09:44:16Z |
Van der Waals epitaxy of topological insulator Bi2Se3 on single layer transition metal dichalcogenide MoS2
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Chen K.H.M;Lin H.Y;Yang S.R;Cheng C.K;Zhang X.Q;Cheng C.M;Lee S.F;Hsu C.H;Lee Y.H;Hong M;Kwo J.; Chen K.H.M; CHIA-KUEN CHENG et al. |
| 臺大學術典藏 |
2021-07-21T23:21:09Z |
In situ Y2O3 on p-In0.53Ga0.47As—Attainment of low interfacial trap density and thermal stability at high temperatures
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Lin, Y. H.G.; Wan, H. W.; Young, L. B.; Liu, J.; Cheng, Y. T.; Lin, K. Y.; Hong, Y. J.; Wu, C. T.; Kwo, J.; Hong, M. |
| 臺大學術典藏 |
2021-06-22T02:00:32Z |
Epitaxy from a periodic y–o monolayer: Growth of single-crystal hexagonal YALO3 perovskite
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Hong, M.;Cheng, C.-K.;Lin, Y.-H.;Young, L.B.;Cai, R.-F.;Hsu, C.-H.;Wu, C.-T.;Kwo, J.; Hong, M.; Cheng, C.-K.; Lin, Y.-H.; Young, L.B.; Cai, R.-F.; Hsu, C.-H.; Wu, C.-T.; Kwo, J.; CHIA-KUEN CHENG |
