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Showing items 26-35 of 93  (10 Page(s) Totally)
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Institution Date Title Author
國立中山大學 2006 Unintentionally doped InN grown onto atomically flat AlN intermediate layer using plasma-assisted molecular beam epitaxy K.R. Wang;L.W. Tu;S.J. Lin;Y.L. Chen;Z.W. Jiang;M. Chen;C.L. Hsiao;K.H. Cheng;J.W. Yeh;S.K. Chen
國立中山大學 2006 Reply to Comments on “Spin splitting in modulation-doped AlxGa1-xN/GaN heterostructures” I. Lo;J.K. Tsai;W.J. Yao;P.C. Ho;L.W. Tu;T.C. Chang;S. Elhamri;W.C. Mitchel;K.Y. Hsieh;J.H. Huang;H.L. Huang;W.C. Tsai
國立中山大學 2006 Buffer controlled GaN nanorods growth on Si(111) substrates by plasma-assisted molecular beam epitaxy C.L. Hsiao;L.W. Tu;T.W. Chi;H.W. Seo;Q.Y. Chen;W.K. Chu
國立中山大學 2006 Electrostatic and structural properties of GaN nanorods/nanowires from first-principles M.H. Tsai;Z.F. Jhang;J.Y. Jiang;Y.H. Tang;L.W. Tu
國立中山大學 2006 The electrostatic and structural properties of GaN nanorods/nanowires from first-principles M.H. Tsai;Z.F. Jhang;J.Y. Jiang;Y.H. Tang;L.W. Tu
國立中山大學 2005 Contactless electroreflectance and photoreflectance studies of n- and p-type-doped GaN with Ga and N face C.H. Chang;D.P. Wang;C.C. Wu;C.L. Hsiao;L.W. Tu
國立中山大學 2005 Polycrystalline to Single-Crystalline InN Grown on Si(111) Substrates by Plasma-Assisted Molecular-Beam Epitaxy C.L. Hsiao;L.W. Tu;M. Chen;Z.W. Jiang;N.W. Fan;Y.J. Tu;K.R. Wang
國立中山大學 2005 Contactless Electroreflectance and Photoreflectance Studies of n- and p-type-doped GaN with Ga and N face C.H. Chang;D.P. Wang;C.C. Wu;C.L. Hsiao;L.W. Tu
國立中山大學 2005 Self-Formation of GaN Hollow Nanocolumns by Inductively Coupled Plasma Etching S.C. Hung;Y.K. Su;S.J. Chang;S.C. Chen;L.W. Ji;T.H. Fang;L.W. Tu;M. Chen
國立中山大學 2005 Catalytic Nanocapillary Condensation and Epitaxial GaN Nanorod Growth H.W. Seo;Q.Y. Chen;L.W. Tu;C.L. Hsiao;M.N. Iliev;W.K. Chu

Showing items 26-35 of 93  (10 Page(s) Totally)
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