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Showing items 16-25 of 65 (7 Page(s) Totally)
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| 國立交通大學 |
2014-12-08T15:17:51Z |
Oxide grown on polycrystal silicon by rapid thermal oxidation in N2O
|
Kao, CH; Lai, CS; Lee, CL |
| 國立交通大學 |
2014-12-08T15:17:09Z |
Impact of STI on the reliability of narrow-width pMOSFETs with advanced ALD N/O gate stack
|
Chung, SS; Yeh, CH; Feng, HJ; Lai, CS; Yang, JJ; Chen, CC; Jin, Y; Chen, SC; Liang, MS |
| 國立交通大學 |
2014-12-08T15:16:56Z |
Characteristics of fluorine implantation for HfO2 gate dielectrics with high-temperature postdeposition annealing
|
Lai, CS; Wu, WC; Wang, JC; Cha, TS |
| 國立交通大學 |
2014-12-08T15:03:13Z |
THE ELECTRICAL CHARACTERISTICS OF POLYSILICON OXIDE GROWN IN PURE N2O
|
LAI, CS; LEI, TF; LEE, CL |
| 國立交通大學 |
2014-12-08T15:03:06Z |
POST-POLYSILICON GATE-PROCESS-INDUCED DEGRADATION ON THIN GATE OXIDE
|
LAI, CS; LEI, TF; LEE, CL; CHAO, TS |
| 國立交通大學 |
2014-12-08T15:02:40Z |
A novel vertical bottom-gate polysilicon thin film transistor with self-aligned offset
|
Lai, CS; Lee, CL; Lei, TF; Chern, HN |
| 國立交通大學 |
2014-12-08T15:02:33Z |
Nitridization of the stacked poly-Si gate to suppress the boron penetration in pMOS
|
Lin, YH; Lai, CS; Lee, CL; Lei, TF; Chao, TS |
| 國立交通大學 |
2014-12-08T15:02:30Z |
Dynamics of a ''Rouse'' segment as probed by depolarized photon-correlation and viscoelasticity measurements
|
Lin, YH; Lai, CS |
| 國立交通大學 |
2014-12-08T15:02:10Z |
The performance indicators for science and technology projects in Taiwan
|
Yang, C; Tarng, MY; Lai, CS; Lin, ZB |
| 國立交通大學 |
2014-12-08T15:01:22Z |
The TEOS CVD oxide deposited on phosphorus in situ doped polysilicon with rapid thermal annealing
|
Kao, CH; Lai, CS; Lee, CL |
Showing items 16-25 of 65 (7 Page(s) Totally)
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