臺灣學術機構典藏系統 (Taiwan Academic Institutional Repository, TAIR)

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机构	日期	题名	作者
臺大學術典藏	2019-03-11T08:02:18Z	The demonstration of the Si nano-tube device with the promising short channel control	P.-G. Chen;M. H.Liao; M. H.Liao; P.-G. Chen
臺大學術典藏	2019-03-11T08:02:18Z	The dependency of different stress-level SiN capping films and the optimization of D-SMT process for the device performance booster in Ge n-FinFETs	P.-G. Chen;M. H.Liao; M. H.Liao; P.-G. Chen
臺大學術典藏	2019-03-11T08:02:18Z	The effect of CESL and dummy poly gate for n-type MOSFETs with short Si0.75Ge0.25 channel.	C.-C. Lee;H.-W. Hsuh;M. H.Liao; M. H.Liao; H.-W. Hsuh; C.-C. Lee
臺大學術典藏	2019-03-11T08:02:17Z	The demonstration of nonlinear analytic model for the strain field induced by thermal copper filled TSVs (through silicon via)	C.-X. Hong;C.-H. Chen;M.-Y. Yu;G.-H. Liu;M. H.Liao; M. H.Liao; G.-H. Liu; M.-Y. Yu; C.-H. Chen; C.-X. Hong
臺大學術典藏	2019-03-11T08:02:17Z	The demonstration of promising Ge ntype multi-gate-FETs with the magnetic FePt metal gate scheme	P.-G. Chen;M. H.Liao; M. H.Liao; P.-G. Chen
臺大學術典藏	2019-03-11T08:02:16Z	The demonstration of colossal magneto-capacitance effect with the promising gate stack characteristics on Ge (100) by the magnetic gate stack design	S.-C. Huang;M. H.Liao; M. H.Liao; S.-C. Huang
臺大學術典藏	2019-03-11T08:02:15Z	The comprehensive study and the reduction of contact resistivity on the n-InGaAs MIS contact system with different inserted insulators	C. Lien;M. H.Liao; M. H.Liao; C. Lien
臺大學術典藏	2019-03-11T08:02:15Z	The demonstration of a D-SMT stressor on Ge planer n-MOSFETs	P.-G. Chen;M. H.Liao; M. H.Liao; P.-G. Chen
臺大學術典藏	2019-03-11T08:02:14Z	Synthesis and characterization of n-type NiO:Al thin films for fabrication of p-n NiO homojunctions	S.-M. Song; P.-C. Ling; S.-C. Chenh; H. Sun; M. H.Liao; S.-M. Song;P.-C. Ling;S.-C. Chenh;H. Sun;M. H.Liao
臺大學術典藏	2019-03-11T08:02:13Z	Sub-60mV/dec Subthreshold Swing on Reliability of Ferroelectric HfZrOx Negative-Capacitacne FETs with DC Sweep and AC Stress Cycles	Y.-C. Chou; Z.-Y. Wang; S.-Y.Chen; G.-Y. Siang; H.-Y. Chen; C. Lo; P.-G. Chen; Y.-J. Lee; K.-S.Li; S. T. Chang; M. H. Lee; M. H. Lee;S. T. Chang;K.-S.Li;Y.-J. Lee;P.-G. Chen;C. Lo;H.-Y. Chen;G.-Y. Siang;S.-Y.Chen;Z.-Y. Wang;Y.-C. Chou;S.-S. Gu;R.-C. Hong;C.-Y. Liao;K.-T. Chen;M. H.Liao; M. H.Liao; K.-T. Chen; C.-Y. Liao; R.-C. Hong; S.-S. Gu
臺大學術典藏	2019-03-11T08:02:12Z	STI Geometric Influence of a Recessed Surface on Array-type Arrangements of Nano-scaled Devices Strained by CESL and Ge-based Stressors	S.-W. Cheng;P.-C. Huang;C.-P. Hsieh;C. C. Lee;M. H.Liao; M. H.Liao; C. C. Lee; C.-P. Hsieh; P.-C. Huang; S.-W. Cheng
臺大學術典藏	2019-03-11T08:02:12Z	STI stress modulation with additional implantati on and natural pad sin mask	M.S.Liang;L.-Y.Yeh;T.L. Lee;M. H.Liao; M. H.Liao; T.L. Lee; L.-Y.Yeh; M.S.Liang
臺大學術典藏	2019-03-11T08:02:12Z	Studies of boron diffusivities on (001) and (110) substrate orientation in Si and Ge along vertical/out-of plane and lateral/in-plane directions study	M. H.Liao; M. H.Liao
臺大學術典藏	2019-03-11T08:02:11Z	SEMICO NDUCTO R DEVICE AND METHOD OF FORMAT ION	M. H.Liao; M. H.Liao
臺大學術典藏	2019-03-11T08:02:10Z	Prospects for Ferroelectric HfZrOx FETs with Experimentally CET=0.98nm,SSfor=42mV/dec, SSrev=28mV/dec, Switch-OFF	M.-C. Chen;K.-S. Li;M. Tang;S.-J. Huang;J.-W. Lee;S.-N. Liu;M.-J. Xie;C.-C. Cheng;K-Y. Chu;C. Liu;P.-G. Chen;M. H. Lee;M. H.Liao; M. H.Liao; M. H. Lee; P.-G. Chen; C. Liu; K-Y. Chu; C.-C. Cheng; M.-J. Xie; S.-N. Liu; J.-W. Lee; S.-J. Huang; M. Tang; K.-S. Li; M.-C. Chen
臺大學術典藏	2019-03-11T08:02:10Z	Relaxation of Residual Stress in Bent GaN Film on Sapphire Substrate by Laser Treatment With an Optimized Surface Structure Design	M.-C.Huang;G.-H. Liu;M.-Y. Yu;S. C. Kao;L.-C. Chang;C. H. Chen;M. H.Liao; M.-C.Huang; G.-H. Liu; M.-Y. Yu; S. C. Kao; L.-C. Chang; C. H. Chen; M. H.Liao
臺大學術典藏	2019-03-11T08:02:09Z	Planarization, Fabrication and Characterization of Three-dimensional Magnetic Field Sensors	Ching-Ray Chang;Meng-Huang Lai;Jong-Ching Wu;Jen-Hwa Hsu;Jen-Tzong Jeng;Chih-Cheng Lu;Yu-Hsin Su;Van Su Luong;M. H.Liao; M. H.Liao; Van Su Luong; Yu-Hsin Su; Chih-Cheng Lu; Jen-Tzong Jeng; Jen-Hwa Hsu; Jong-Ching Wu; Meng-Huang Lai; Ching-Ray Chang
臺大學術典藏	2019-03-11T08:02:07Z	MOS Devices with UltraHigh Dielectric Constants and Methods of Forming the Same	M.Hongh;M.H.Liao; M.H.Liao; M.Hongh
臺大學術典藏	2019-03-11T08:02:07Z	Narrow channel width effect modificati on in a shallow trench isolation device	T.L. Lee;M. H.Liao; M. H.Liao; T.L. Lee
臺大學術典藏	2019-03-11T08:02:07Z	Nonlinear analytic model for the strain field induced by thermal copper filled TSVs	J.-H. Liang;K.-C. Chen;J.-J. Lee;C.-H. Chen;M. H.Liao; M. H.Liao; C.-H. Chen; J.-J. Lee; K.-C. Chen; J.-H. Liang
臺大學術典藏	2019-03-11T08:02:07Z	Performance Enhancement for the Triboelectric Energy Harvester by using interfacial microdome array structures	C.-C. Chuang;H.-I. Huang;M. H.Liao; M. H.Liao; H.-I. Huang; C.-C. Chuang
臺大學術典藏	2019-03-11T08:02:06Z	Monolithic integration of GaN-based light- emitting diodes and metal-oxide-semiconductor field-effect transistors	J.-M. Hwang;M.-T. Wang;M.-H. Lee;Y.-C. Yao;Y.-A. Hsieh;P.-G. Chen;Z.-P. Yang;Y.-J. Lee;M. H.Liao; M. H.Liao; Y.-J. Lee; Z.-P. Yang; P.-G. Chen; Y.-A. Hsieh; Y.-C. Yao; M.-H. Lee; M.-T. Wang; J.-M. Hwang
臺大學術典藏	2019-03-11T08:02:05Z	Improved Si0.5Ge0.5/Si interface quality achieved by the process of low energy hydrogen plasma cleaning and investigation of interface quality with positron annihilation spectroscopy	C.-H. Chen;M. H.Liao; M. H.Liao; C.-H. Chen
臺大學術典藏	2019-03-11T08:02:05Z	In0.18Al0.82N/AlN/GaN HEMT on Si with Hybrid Ohmic and Schottky Source/Drain Solid State Electronics	P.-G. Chen; M. Tang; M. H. Lee; M. H. Lee;M. Tang;P.-G. Chen;M. H.Liao; M. H.Liao
臺大學術典藏	2019-03-11T08:02:05Z	Isolation Region Implant and Structure	T.L. Lee;M. H.Liao; M. H.Liao; T.L. Lee

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