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臺灣學術機構典藏系統 (Taiwan Academic Institutional Repository, TAIR)
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Showing items 111-135 of 158  (7 Page(s) Totally)
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Institution Date Title Author
國立中山大學 1991 ZnSe blue light emitting diodes prepared by metalorganic chemical vapor deposition M.K. Lee;R.H. Horng;L.C. Haung
國立中山大學 1991 Migration enhancement epitaxy of GaAs by conventional MOCVD system M.K. Lee;C.C. Hu;M.H. Lin
國立中山大學 1990 Indium Phosphide on Silicon Heteroepitaxy : Lattice Deformation and Strain Relaxation D.S. Wuu; R.H. Horng; M.K. Lee
國立中山大學 1990 Characteristics of Ga(0.51)In(0.49)P/GaAs Heterostructures Grown on Si Substrates by Organometallic Epitaxy R.H. Horng; D.S. Wuu; K.C. Huang; M.K. Lee
國立中山大學 1990 Characterization of ZnSe Heteroepilayer On GaAs/Si Substrate M.K. Lee; M.Y. Yeh; J.H. Chang; K.Y. Yu; Y.F. Lin
國立中山大學 1990 Organometallic Heteroepitaxy of Indium Phosphide Directly on Silicon for Solar Cell Applications M.K. Lee;D.S. Wuu;R.H. Horng
國立中山大學 1990 Investigation of Laser-Assisted Metalorganic Chemical Vapor Deposition of ZnSe on (100)Si M.K. Lee;M.Y. Yeh;C.C. Chang
國立中山大學 1990 Improvements in the heteroepitaxy of GaAs on Si by Incorporating a ZnSe buffer layer M.K. Lee;R.H. Horng;D.S. Wuu;P.C. Chen
國立中山大學 1989 Heteroepitaxial Growth of ZnSe on (100)Si by Low-pressure Organometallic Chemical Vapor Deposition M.K. Lee; M.Y. Yeh; C.C. Chang
國立中山大學 1989 Improvements in the Organometallic Heteroepitaxy of Indium Phosphide Directly on Silicon D.S. Wuu; R.H. Horng; K.C. Huang; M.K. Lee
國立中山大學 1989 Material Properties of InP-on-Si Grown by Low-Pressure Organometallic Vapor Phase Epitaxy D.S. Wuu; H.H. Tung; R.H. Horng; M.K. Lee
國立中山大學 1989 Strain Variations in Heteroepitaxial InP-on-Si Grown by Low-Pressure Metalorganic Chemical Vapor Deposition D.S. Wuu; R.H. Horng; M.K. Lee
國立中山大學 1989 ZnSe/Si Hybrid Material System Prepared by Low-Pressure Metalorganic Chemical Vapor Deposition M.K. Lee;M.Y. Yeh;C.C. Chang
國立中山大學 1989 Compound Semiconductors on Silicon Technology M.K. Lee
國立中山大學 1988 Heteroepitaxial Growth of Ga(0.51)In(0.49)P/GaAs Epilayers on Si Substrates bv Low-Pressure Organometallic Chemical Vapor Deposition R.H. Horng; D.S. We; M.K. Lee
國立中山大學 1988 Growth and Characterization of InP/GaAs Epilayers on Si Substrates by Low-pressure Metalorganic Chemical Vapor Phase Epitaxy M.K. Lee; D.S. Wuu; H.H. Jung; K.Y. Yu; K.C. Huang
國立中山大學 1988 Heteroepitaxial Growth of ZnSe on (111)Si by Low-pressure Metalorganic Chemical Vapor Deposition M.K. Lee; J.H. Chang; M.Y. Yeh; Y.F. Lin
國立中山大學 1988 Growth and Characterization of InP Epilayers on ZnSe-coated Si Substrates by Low-Pressure Metalorganic Chemical Vapor Deposition M.K. Lee; D.S. Wuu; H.H. Tung; J.H. Chang; Y.F. Lin
國立中山大學 1988 Isoelectronic Doping in GaAs Epilayers Grown by Molecular Beam Epitaxy M.K. Lee; T.H. Chiu; A. Dayem; E. Agyekum
國立中山大學 1988 Heteroepitaxial Growth of Indium Phosphide on Silicon by MOCVD Using Adduct Source M.K. Lee; D.S. We; H.H. Tung
國立中山大學 1988 Characterization of InP/GaAs Epilayers Grown on Si Substrates by Low-Pressure Organometallic Chemical Vapor Phase Epitaxy M.K. Lee; D.S. Wuu; H.H. Tung; K.Y. Yu; K.C. Huang
國立中山大學 1988 MOCVD Growth of InP on Si by Using a GaAs Buffer Layer M.K. Lee;D.S. Wuu;H.H. Tung;K.Y. Yu;K.C. Huang
國立中山大學 1988 Heteroepitaxial Grown of ZnSe on GaAs/Si Substrates by Low-Pressure Metalorganic Chemical Vapor Deposition M.K. Lee;J.H. Chang;M.Y. Yeh;Y.F. Lin;K.C. Huang
國立中山大學 1988 Heteroepitaxial Growth of ZnSe on (111)Si by Low-Pressure Metalorganic Chemical Vapor Deposition M.K. Lee;J.H. Chang;M.Y. Yeh;K.C. Huang
國立中山大學 1988 Organometallic growth and Material Properties of InP-on-Si M.K. Lee;D.S. Wuu;H.H. Tung;R.H. Horng;K.C. Huang

Showing items 111-135 of 158  (7 Page(s) Totally)
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