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Showing items 11-20 of 56  (6 Page(s) Totally)
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Institution Date Title Author
南台科技大學 2007 Enhanced efficiency of GaN-based light-emitting diodes with periodic textured Ga-doped ZnO transparent contact layer 李明倫; J. K. Sheu; Y. S. Lu; M. L. Lee; Wei-Chih Lai; C. H. Kuo; Chun-Ju Tun
南台科技大學 2007 GaN-based Ultraviolet p-i-n Photodiodes with Buried p-layer Structure Grown by MOVPE 李明倫; M. L. Lee; J. K. Sheu
南台科技大學 2006-08 AlGaN/GaN Schottky-barrier UV-B bandpass photodetectors with ITO contacts and LT-GaN cap layers T. K. Ko; S. J. Chang; J. K. Sheu; S. C. Shei; Y. Z. Chiou; M. L. Lee
南台科技大學 2006 Improved performance of planar GaN-based p-i-n photodetectors with Mg-implanted isolation ring 李明倫; M. C. Chen; J. K. Sheu; M. L. Lee; C. J. Tun; G. C. Chi
南台科技大學 2006 Planar Ultraviolet Photodetectors Formed by Si Implantation into p-GaN 李明倫; M. C. Chen; J. K. Sheu; M. L. Lee; C. J. Kao; C. J. Tun; G. C. Chi
南台科技大學 2006 Planar GaN p-i-n photodiodes with n+-conductive channel formed by Si implantation 李明倫; M. C. Chen; J. K. Sheu; M. L. Lee; C. J. Kao; G. C. Chi
南台科技大學 2006 InGaN light-emitting diodes with naturally formed truncated micropyramids on top surface 李明倫; J. K. Sheu; C. M. Tsai; M. L. Lee; S. C .Shei; W. C. Lai
南台科技大學 2006 Effects of Thermal Annealing on Al-Doped ZnO Films Deposited on p-Type Gallium Nitride 李明倫; C. J. Tun; J. K. Sheu; M. L. Lee; C. C. Hu; C. K. Hsieh; G. C. Chi
南台科技大學 2006 Ultraviolet band-pass Schottky barrier photodetectors formed by Al-doped ZnO contacts to n-GaN 李明倫; J. K. Sheu; M. L. Lee; C. J. Tun; S.W. Lin
南台科技大學 2006 Schottky barrier heights of metal contacts to n-type gallium nitride with low-temperature-grown cap layer 李明倫; M. L. Lee; J. K. Sheu; S. W. Lin

Showing items 11-20 of 56  (6 Page(s) Totally)
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