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臺灣學術機構典藏系統 (Taiwan Academic Institutional Repository, TAIR)
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Institution Date Title Author
南台科技大學 2006 Improved Performance of Planar GaN-based p-i-n Photodetectors with Mg-implanted Isolation Ring 李明倫; M. C. Chen; J. K. Sheu; M. L. Lee; C. J. Tun; G. C. Chi
南台科技大學 2006 Effects of thermal annealing on transparent gallium-doped zinc oxide films prepared by sputtering system 李明倫; K. H. Chang; K. W. Hsu; H. H. Chen; M. L. Lee; J. K. Sheu
南台科技大學 2006 Ultraviolet band-pass GaN/AZO Schottky barrier photodetectors 李明倫; M. L. Lee; P. F. Chi; S. J. Tu; H. H. Chen; J. K. Sheu
南台科技大學 2006 Inverted GaN P-I-N Photodiodes with a buried tunneling junction 李明倫; M. L. Lee; J. K. Sheu; W.C.Lai; S.C.Shei; S.J.Chang
國立高雄師範大學 2006 Protection from oxidative damage using Bidens pilosa extracts in normal human erythrocytes 陳師慶; H. L. Yang;Ssu-Ching Chen; N. W. Chang; J. M. Chang; M. L. Lee
南台科技大學 2005 Effects of thermal annealing on Si-implanted GaN films grown at low temperature by metal-organic vapor-phase 李明倫; J. K. Sheu; S. S. Chen; M. L. Lee; W. C. Lai; W. H. Chang; G. C. Chi
南台科技大學 2005 Comparison of low-temperature GaN, SiO2, and SiNx as gate insulators on AlGaN/GaN heterostructure field-effect transistors 李明倫; C. J. Kao; M. C. Chen; C.J. Tun; G. C. Chi; J. K. Sheu; W. C. Lai; M. L. Lee; F.Ren; S.J.Pearton
南台科技大學 2005 Rectifying characteristics of WSi0.8--GaN Schottky barrier diodes with a GaN cap layer grown at low temperature 李明倫; J. K. Sheu; M. L. Lee; H. C. Tseng; W. C. Lai; G. C. Chi
南台科技大學 2005 Aluminum gallium nitride ultraviolet p-i-n photodiodes with buried p-layer structure,Aluminum gallium nitride ultraviolet photodiodes with buried p-layer structure 李明倫; J. K. Sheu; M. L. Lee; W. C. Lai
南台科技大學 2005 AlGaN-GaN Schottky-barrier photodetectors with LT GaN cap layers 李明倫; T. K. Ko; S. J. Chang; Y. K. Su; M. L. Lee; C. S. Chang; Y. C. Lin; S. C. Shei; J. K. Sheu; W. S. Chen; C. F. Shen

Showing items 21-30 of 56  (6 Page(s) Totally)
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