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Showing items 171-180 of 801 (81 Page(s) Totally)
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| 臺大學術典藏 |
2019-12-27T07:49:18Z |
Single-crystal atomic layer deposited Y<inf>2</inf>O<inf>3</inf> on GaAs(0 0 1) - Growth, structural, and electrical characterization
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Wu, S.Y.;Chen, K.H.;Lin, Y.H.;Cheng, C.K.;Hsu, C.H.;Kwo, J.;Hong, M.; Wu, S.Y.; Chen, K.H.; Lin, Y.H.; Cheng, C.K.; Hsu, C.H.; Kwo, J.; Hong, M.; MINGHWEI HONG |
| 臺大學術典藏 |
2019-12-27T07:49:18Z |
Epitaxial ferromagnetic Fe<inf>3</inf>Si on GaAs(111)A with atomically smooth surface and interface
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Liu, Y.C.;Chen, Y.W.;Tseng, S.C.;Chang, M.T.;Lo, S.C.;Lin, Y.H.;Cheng, C.K.;Hung, H.Y.;Hsu, C.H.;Kwo, J.;Hong, M.; Liu, Y.C.; Chen, Y.W.; Tseng, S.C.; Chang, M.T.; Lo, S.C.; Lin, Y.H.; Cheng, C.K.; Hung, H.Y.; Hsu, C.H.; Kwo, J.; Hong, M.; MINGHWEI HONG |
| 臺大學術典藏 |
2019-12-27T07:49:18Z |
Self-aligned inversion-channel n-InGaAs, p-GaSb, and p-Ge MOSFETs with a common high 庥 gate dielectric using a CMOS compatible process
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Fu, C.H.;Lin, Y.H.;Lee, W.C.;Lin, T.D.;Chu, R.L.;Chu, L.K.;Chang, P.;Chen, M.H.;Hsueh, W.J.;Chen, S.H.;Brown, G.J.;Chyi, J.I.;Kwo, J.;Hong, M.; Fu, C.H.; Lin, Y.H.; Lee, W.C.; Lin, T.D.; Chu, R.L.; Chu, L.K.; Chang, P.; Chen, M.H.; Hsueh, W.J.; Chen, S.H.; Brown, G.J.; Chyi, J.I.; Kwo, J.; Hong, M.; MINGHWEI HONG |
| 臺大學術典藏 |
2019-12-27T07:49:18Z |
In-situ atomic layer deposition of tri-methylaluminum and water on pristine single-crystal (In)GaAs surfaces: Electronic and electric structures
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Pi, T.W.;Lin, Y.H.;Fanchiang, Y.T.;Chiang, T.H.;Wei, C.H.;Lin, Y.C.;Wertheim, G.K.;Kwo, J.;Hong, M.; Pi, T.W.; Lin, Y.H.; Fanchiang, Y.T.; Chiang, T.H.; Wei, C.H.; Lin, Y.C.; Wertheim, G.K.; Kwo, J.; Hong, M.; MINGHWEI HONG |
| 臺大學術典藏 |
2019-12-27T07:49:17Z |
Low interfacial trap density and high-temperature thermal stability in atomic layer deposited single crystal Y 2 O 3 /n-GaAs(001)
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Lin, Y.-H.;Fu, C.-H.;Lin, K.-Y.;Chen, K.-H.;Chang, T.-W.;Raynien Kwo, J.;Hong, M.; Lin, Y.-H.; Fu, C.-H.; Lin, K.-Y.; Chen, K.-H.; Chang, T.-W.; Raynien Kwo, J.; Hong, M.; MINGHWEI HONG |
| 臺大學術典藏 |
2019-12-27T07:49:17Z |
Coherent acoustic phonon oscillation accompanied with backward acoustic pulse below exciton resonance in a ZnO epifilm on oxide-buffered Si(1 1 1)
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Lin, J.-H.;Shen, Y.-K.;Liu, W.-R.;Lu, C.-H.;Chen, Y.-H.;Chang, C.-P.;Lee, W.-C.;Hong, M.;Kwo, J.-R.;Hsu, C.-H.;Hsieh, W.-F.; Lin, J.-H.; Shen, Y.-K.; Liu, W.-R.; Lu, C.-H.; Chen, Y.-H.; Chang, C.-P.; Lee, W.-C.; Hong, M.; Kwo, J.-R.; Hsu, C.-H.; Hsieh, W.-F.; MINGHWEI HONG |
| 臺大學術典藏 |
2019-12-27T07:49:17Z |
Demonstration of large field effect in topological insulator films via a high-庥 back gate
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Wang, C.Y.;Lin, H.Y.;Yang, S.R.;Chen, K.H.M.;Lin, Y.H.;Chen, K.H.;Young, L.B.;Cheng, C.K.;Fanchiang, Y.T.;Tseng, S.C.;Hong, M.;Kwo, J.; Wang, C.Y.; Lin, H.Y.; Yang, S.R.; Chen, K.H.M.; Lin, Y.H.; Chen, K.H.; Young, L.B.; Cheng, C.K.; Fanchiang, Y.T.; Tseng, S.C.; Hong, M.; Kwo, J.; MINGHWEI HONG |
| 臺大學術典藏 |
2019-12-27T07:49:16Z |
Single-crystal hexagonal perovskite YAlO3 epitaxially on GaAs(111)A and (001) using atomic layer deposition
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Cheng, C.K.;Young, L.B.;Lin, K.Y.;Lin, Y.H.;Wan, H.W.;Lu, G.J.;Chang, M.T.;Cai, R.F.;Lo, S.C.;Li, M.Y.;Hsu, C.H.;Kwo, J.;Hong, M.; Cheng, C.K.; Young, L.B.; Lin, K.Y.; Lin, Y.H.; Wan, H.W.; Lu, G.J.; Chang, M.T.; Cai, R.F.; Lo, S.C.; Li, M.Y.; Hsu, C.H.; Kwo, J.; Hong, M.; MINGHWEI HONG |
| 臺大學術典藏 |
2019-12-27T07:49:16Z |
Suppressing Ge diffusion by GaAsSb barriers in molecular beam epitaxy of InGaAs on Ge
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Hsueh, W.-J.; Chiu, P.-C.; Hong, M.-H.; Chyi, J.-I.; MINGHWEI HONG |
| 臺大學術典藏 |
2019-12-27T07:49:16Z |
Relevance of GaAs(001) surface electronic structure for high frequency dispersion on n-type accumulation capacitance
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Pi, T.W.; Chen, W.S.; Lin, Y.H.; Cheng, Y.T.; Wei, G.J.; Lin, K.Y.; Cheng, C.-P.; Kwo, J.; Hong, M.; MINGHWEI HONG |
Showing items 171-180 of 801 (81 Page(s) Totally)
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