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"minghwei hong"
Showing items 286-335 of 801 (17 Page(s) Totally)
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| 臺大學術典藏 |
2018-09-10T08:12:52Z |
High-quality molecular-beam-epitaxy-grown Ga2O3 „Gd2O3… on Ge „100…: Electrical and chemical characterizations
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Chu, RL;Lin, TD;Chu, LK;Huang, ML;Chang, CC;Hong, M;Lin, CA;Kwo, J; Chu, RL; Lin, TD; Chu, LK; Huang, ML; Chang, CC; Hong, M; Lin, CA; Kwo, J; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T08:12:52Z |
Effective passivation and high-performance metal-oxide-semiconductor devices using ultra-high-vacuum deposited high-$κ$ dielectrics on Ge without interfacial layers
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Chu, LK;Chu, RL;Lin, TD;Lee, WC;Lin, CA;Huang, ML;Lee, YJ;Kwo, J;Hong, M; Chu, LK; Chu, RL; Lin, TD; Lee, WC; Lin, CA; Huang, ML; Lee, YJ; Kwo, J; Hong, M; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T08:12:52Z |
Passivation of InGaAs using in situ molecular beam epitaxy Al2O3/HfO2 and HfAlO/HfO2
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Chang, P;Lee, WC;Huang, ML;Lee, YJ;Hong, M;Kwo, J; Chang, P; Lee, WC; Huang, ML; Lee, YJ; Hong, M; Kwo, J; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T08:12:51Z |
Great reduction of interfacial traps in Al 2 O 3/GaAs (100) starting with Ga-rich surface and through systematic thermal annealing
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Chang, YC;Merckling, C;Penaud, J;Lu, CY;Brammertz, G;Wang, WE;Hong, M;Kwo, J;Dekoster, J;Caymax, M;others; Chang, YC; Merckling, C; Penaud, J; Lu, CY; Brammertz, G; Wang, WE; Hong, M; Kwo, J; Dekoster, J; Caymax, M; others; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T08:12:51Z |
Lattice strain and in situ chemical depth profiling of nanometer-thick molecular beam epitaxy grown Y2O3 epitaxial films on Si (111)
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Lee, YJ;Lee, WC;Huang, ML;Wu, SY;Nieh, CW;Hong, M;Kwo, J;Hsu, CH; Lee, YJ; Lee, WC; Huang, ML; Wu, SY; Nieh, CW; Hong, M; Kwo, J; Hsu, CH; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T08:12:51Z |
Nano-electronics of high k dielectrics on exotic semiconductors for science and technology beyond Si CMOS
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Lee, WC; Chang, P; Lee, YJ; Huang, ML; Lin, TD; Chu, LK; Chang, YC; Chiu, HC; Chang, YH; Lin, CA; others; MINGHWEI HONG; Lee, WC;Chang, P;Lee, YJ;Huang, ML;Lin, TD;Chu, LK;Chang, YC;Chiu, HC;Chang, YH;Lin, CA;others |
| 臺大學術典藏 |
2018-09-10T08:12:51Z |
InGaAs, Ge, and GaN metal-oxide-semiconductor devices with high-k dielectrics for science and technology beyond Si CMOS
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Hong, M;Kwo, J;Lin, TD;Huang, ML;Lee, WC;Chang, P; Hong, M; Kwo, J; Lin, TD; Huang, ML; Lee, WC; Chang, P; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T08:12:50Z |
Achieving high-performance Ge MOS devices using high-к gate dielectrics Ga 2 O 3 (Gd 2 O 3) of sub-nm EOT
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Chu, LK;Chu, RL;Lin, CA;Lin, TD;Chiang, TH;Kwo, J;Hong, Mingyi; Chu, LK; Chu, RL; Lin, CA; Lin, TD; Chiang, TH; Kwo, J; Hong, Mingyi; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T08:12:50Z |
Strong crystal anisotropy of magneto-transport property in Fe3Si epitaxial films
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Huang, SY;Hung, HY;Chang, P;Lin, WC;Lee, SF;Hong, M;Kwo, J; Huang, SY; Hung, HY; Chang, P; Lin, WC; Lee, SF; Hong, M; Kwo, J; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T08:12:50Z |
DC and RF characteristics of self-aligned inversion-channel In0. 53Ga0. 47As MOSFETs using MBE-Al2O3/Ga2O3 (Gd2O3) as gate dielectrics
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Lin, T;Chang, P;Chiu, H;Hong, M;Kwo, J;Lin, Y;Hsu, S; Lin, T; Chang, P; Chiu, H; Hong, M; Kwo, J; Lin, Y; Hsu, S; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T08:12:50Z |
A15 SUPERCONDUCTORS THROUGH DIRECT SOLID-STATE PRECIPITATION: V3Ga AND N63AI
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Hong, Minghwei; Hong, Minghwei; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T08:12:50Z |
Bulk and Surface Excitations in Gd2O3: Electron Energy Loss Spectroscopy Study
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Liou, SC;Chu, M-W;Chen, CH;Lee, YJ;Hong, M;Kwo, J; Liou, SC; Chu, M-W; Chen, CH; Lee, YJ; Hong, M; Kwo, J; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T08:12:49Z |
In-situ XPS, STM and STS analyses of high k oxide/III-V interfaces
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Huang, Mao-Lin;Chang, Yu-Shing;Chang, Pen;Chiu, Han-Chin;Shen, Jyun-Yang;Lin, Tsung-Da;Raynien Kwo, J;Hong, Minghwei;Pi, Tun-Wen; Huang, Mao-Lin; Chang, Yu-Shing; Chang, Pen; Chiu, Han-Chin; Shen, Jyun-Yang; Lin, Tsung-Da; Raynien Kwo, J; Hong, Minghwei; Pi, Tun-Wen; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T08:12:49Z |
High Dielectrics on High Carrier Mobility InGaAs Compound Semiconductors and GaN-Growth, Interfacial Structural Studies, and Surface Fermi Level Unpinning
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Hong, Minghwei; Hong, Minghwei; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T08:12:49Z |
Method for forming substrates for MOS transistor components and its products
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Wu, Yan Dar; Lee, Kun Yu; Lee, Yi Jiun; MINGHWEI HONG; Chang, Hsiang Pi; Lee, Wei Chin; Hong, Ming-Hwei; Kwo, Juei-Nai; Kwo, Juei-Nai;Hong, Ming-Hwei;Lee, Wei Chin;Chang, Hsiang Pi;Wu, Yan Dar;Lee, Kun Yu;Lee, Yi Jiun |
| 臺大學術典藏 |
2018-09-10T08:12:49Z |
$\\backslash$ textit ${$In-situ$}$ XPS, STM and STS analyses of high k oxide/III-V interfaces
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Huang, Mao-Lin;Chang, Yu-Shing;Chang, Pen;Chiu, Han-Chin;Shen, Jyun-Yang;Lin, Tsung-Da;Kwo, J Raynien;Hong, Minghwei;Pi, Tun-Wen; Huang, Mao-Lin; Chang, Yu-Shing; Chang, Pen; Chiu, Han-Chin; Shen, Jyun-Yang; Lin, Tsung-Da; Kwo, J Raynien; Hong, Minghwei; Pi, Tun-Wen; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T08:12:49Z |
InGaAs and Ge MOSFETs with a common high $κ$ gate dielectric
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Lee, WC;Lin, TD;Chu, LK;Chang, P;Chang, YC;Chu, RL;Chiu, HC;Lin, CA;Chang, WH;Chiang, TH;others; Lee, WC; Lin, TD; Chu, LK; Chang, P; Chang, YC; Chu, RL; Chiu, HC; Lin, CA; Chang, WH; Chiang, TH; others; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T07:34:20Z |
Diffraction studies of rare earth metals and superlattices
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Bohr, J;Gibbs, Doon;Axe, JD;Moncton, DE;d'Amico, KL;Majkrzak, CF;Kwo, J;Hong, M;Chien, CL;Jensen, J; Bohr, J; Gibbs, Doon; Axe, JD; Moncton, DE; d'Amico, KL; Majkrzak, CF; Kwo, J; Hong, M; Chien, CL; Jensen, J; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T07:34:20Z |
Demonstration of submicron depletion-mode GaAs MOSFETs with negligible drain current drift and hysteresis
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Wang, Yi Chun; Hong, M; Kuo, JM; Mannaerts, JP; Kwo, J; Tsai, HS; Krajewski, JJ; Chen, YK; Cho, AY; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T07:34:20Z |
Passivation of GaAs using „Ga2O3…„Gd2O3… x, 0 x 1.0 films
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Kwo, J; Murphy, DW; Hong, M; Opila, RL; Mannaerts, JP; Sergent, AM; Masaitis, RL; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T07:34:20Z |
Epitaxial cubic gadolinium oxide as a dielectric for gallium arsenide passivation
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Hong, M; Kwo, J; Kortan, AR; Mannaerts, JP; Sergent, AM; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T07:34:19Z |
Metal-oxide-semiconductor devices with molecular beam epitaxy-grown Y 2 O 3 on Ge
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Chu, LK;Lee, WC;Huang, ML;Chang, YH;Tung, LT;Chang, CC;Lee, YJ;Kwo, J;Hong, M; Chu, LK; Lee, WC; Huang, ML; Chang, YH; Tung, LT; Chang, CC; Lee, YJ; Kwo, J; Hong, M; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T07:34:19Z |
InGaAs Metal Oxide Semiconductor Devices with Ga 2 O 3 (Gd 2 O 3) High-$κ$ Dielectrics for Science and Technology beyond Si CMOS
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Hong, M;Kwo, J;Lin, TD;Huang, ML; Hong, M; Kwo, J; Lin, TD; Huang, ML; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T07:34:19Z |
High $κ$ dielectric single-crystal monoclinic Gd 2 O 3 on GaN with excellent thermal, structural, and electrical properties
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Chang, WH;Lee, CH;Chang, P;Chang, YC;Lee, YJ;Kwo, J;Tsai, CC;Hong, JM;Hsu, C-H;Hong, M; Chang, WH; Lee, CH; Chang, P; Chang, YC; Lee, YJ; Kwo, J; Tsai, CC; Hong, JM; Hsu, C-H; Hong, M; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T07:34:19Z |
Energy-band parameters of atomic layer deposited Al 2 O 3 and HfO 2 on In x Ga As
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Huang, ML;Chang, YC;Chang, YH;Lin, TD;Kwo, J;Hong, M; Huang, ML; Chang, YC; Chang, YH; Lin, TD; Kwo, J; Hong, M; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T07:34:19Z |
Structure of epitaxial Gd 2 O 3 films grown on GaAs (100)
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Kortan, AR; Hong, M; Kwo, J; Mannaerts, JP; Kopylov, N; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T07:34:19Z |
Electrical response of superconducting YBa2Cu3O7- $δ$ to light
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Brocklesby, Wo S;Monroe, Don;Levi, AFJ;Hong, M;Liou, Sy\\_Hwang;Kwo, J;Rice, CE;Mankiewich, PM;Howard, RE; Brocklesby, Wo S; Monroe, Don; Levi, AFJ; Hong, M; Liou, Sy\\_Hwang; Kwo, J; Rice, CE; Mankiewich, PM; Howard, RE; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T07:34:18Z |
Insitu formation of YBa2Cu3Ox thin films by physical sputtering
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Yeh, J-J;Hong, M;Felder, RJ; Yeh, J-J; Hong, M; Felder, RJ; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T07:34:18Z |
Far-infrared transmission of Bi 2 Sr 2 CaCu 2 O 8 films
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Hughes, RA;Timusk, T;Cooper, SL;Thomas, GA;Yeh, JJ;Hong, M; Hughes, RA; Timusk, T; Cooper, SL; Thomas, GA; Yeh, JJ; Hong, M; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T07:34:18Z |
Cu valence and the formation of high Tc superconductor oxides studied by x-ray photoemission spectroscopy on 200 Å Bi-Sr-Ca-Cu oxide thin films
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Yeh, J-J;DiCenzo, SB;Hartford Jr, EH;Hong, M;Felder, RJ; Yeh, J-J; DiCenzo, SB; Hartford Jr, EH; Hong, M; Felder, RJ; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T07:34:18Z |
Research advances on III-V MOSFET electronics beyond Si CMOS
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Kwo, J;Hong, M; Kwo, J; Hong, M; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T07:34:18Z |
Ga2O3 (Gd2O3) on Ge without interfacial layers—energy band parameters and metal oxide semiconductor devices
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Chu, LK;Lin, TD;Huang, ML;Chu, RL;Chang, CC;Kwo, J;Hong, M; Chu, LK; Lin, TD; Huang, ML; Chu, RL; Chang, CC; Kwo, J; Hong, M; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T07:34:18Z |
Ga 2 O 3 (Gd 2 O 3)/GaAs power MOSFETs
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Wang, YC; Hong, M; Kuo, JM; Mannaerts, JP; Tsai, HS; Kwo, J; Krajewski, JJ; Chen, YK; Cho, AY; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T07:34:18Z |
Passivation of GaAs using gallium-gadolinium oxides
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Masaitis, RL; Sergent, AM; MINGHWEI HONG; Opila, RL; Kwo, J; Murphy, DW; Hong, M; Mannaerts, JP |
| 臺大學術典藏 |
2018-09-10T07:34:17Z |
Depletion-mode In 0.2 Ga 0.8 As/GaAs MOSFET with molecular beam epitaxy grown Al 2 O 3/Ga 2 O 3 (Gd 2 O 3) as gate dielectrics
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Lin, CA;Lin, TD;Chiang, TH;Chiu, HC;Chang, P;Hong, M;Kwo, J; Lin, CA; Lin, TD; Chiang, TH; Chiu, HC; Chang, P; Hong, M; Kwo, J; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T07:34:17Z |
GaN on Si with nm-thick single-crystal Sc 2 O 3 as a template using molecular beam epitaxy
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Lee, WC;Lee, YJ;Kwo, J;Hsu, CH;Lee, CH;Wu, SY;Ng, HM;Hong, M; Lee, WC; Lee, YJ; Kwo, J; Hsu, CH; Lee, CH; Wu, SY; Ng, HM; Hong, M; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T07:34:17Z |
GaN metal oxide semiconductor field effect transistors
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Ren, F; Pearton, SJ; Abernathy, CR; Baca, A; Cheng, P; Shul, RJ; Chu, SNG; Hong, M; Schurman, MJ; Lothian, JR; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T07:34:17Z |
Molecular beam epitaxy-grown Al 2 O 3/HfO 2 high-$κ$ dielectrics for germanium
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Lee, WC;Chin, BH;Chu, LK;Lin, TD;Lee, YJ;Tung, LT;Lee, CH;Hong, M;Kwo, J; Lee, WC; Chin, BH; Chu, LK; Lin, TD; Lee, YJ; Tung, LT; Lee, CH; Hong, M; Kwo, J; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T07:34:17Z |
Advances in GaAs Mosfet's Using Ga 2 O 3 (Gd 2 O 3) as Gate Oxide
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Wang, YC; Hong, M; Kuo, JM; Mannaerts, JP; Kwo, J; Tsai, HS; Krajewski, JJ; Weiner, JS; Chen, YK; Cho, AY; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T07:34:17Z |
GaN metal-oxide-semiconductor diodes with molecular beam epitaxy-Al 2 O 3 as a template followed by atomic layer deposition growth
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Chang, YH;Chiu, HC;Chang, WH;Kwo, J;Tsai, CC;Hong, JM;Hong, M; Chang, YH; Chiu, HC; Chang, WH; Kwo, J; Tsai, CC; Hong, JM; Hong, M; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T07:34:16Z |
In-situ growth of Y 1 Ba 2 Cu 3 O 7-x films by molecular beam epitaxy with an activated oxygen source
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Kwo, J;Hong, M;Trevor, DJ;Fleming, RM;White, AE;Mannaerts, JP;Farrow, RC;Kortan, AR;Short, KT; Kwo, J; Hong, M; Trevor, DJ; Fleming, RM; White, AE; Mannaerts, JP; Farrow, RC; Kortan, AR; Short, KT; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T07:34:16Z |
The (Ga 2 O 3) 1- x (Gd 2 O 3) x, Oxides with x= 0-1.0 for GaAs Passivation
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Kwo, J; Hong, M; Kortan, AR; Murphy, DW; Mannaerts, JP; Sergent, AM; Wang, YC; Hsieh, KC; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T07:34:16Z |
Superlattice modulation and epitaxy of Tl2Ba2Ca2Cu3O10 thin films grown on MgO and SrTiO3 substrates
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Chen, CH;Hong, M;Werder, DJ;Kwo, J;Liou, Sy\\_Hwang;Bacon, DD; Chen, CH; Hong, M; Werder, DJ; Kwo, J; Liou, Sy\\_Hwang; Bacon, DD; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T07:34:16Z |
Inversion-channel enhancement-mode GaAs MOSFETs with regrown source and drain contacts
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Liao, Chichih;Cheng, Donald;Cheng, Chienchia;Cheng, KY;Feng, Milton;Chiang, TH;Kwo, J;Hong, M; Liao, Chichih; Cheng, Donald; Cheng, Chienchia; Cheng, KY; Feng, Milton; Chiang, TH; Kwo, J; Hong, M; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T07:34:16Z |
Semiconductor-insulator interfaces
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MINGHWEI HONG; Hong, M; Liu, CT; Reese, H; Kwo, J |
| 臺大學術典藏 |
2018-09-10T07:34:16Z |
Temperature dependence of photoluminescence on molecular-beam-epitaxy grown Ga2O3 (Gd2O3)/GaAs
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Tu, LW; Lee, YC; Lee, KH; Lai, CM; Lo, I; Hsieh, KY; Hong, M; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T07:34:15Z |
Properties of superconducting Tl 2 Ba 2 Ca 2 Cu 3 O 10 films by sputtering
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Hong, M;Kwo, J;Chen, CH;Kortan, AR;Bacon, DD;Liou, SH; Hong, M; Kwo, J; Chen, CH; Kortan, AR; Bacon, DD; Liou, SH; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T07:34:15Z |
PHYSICAL PROCESSING EFFECTS ON POLYCRYSTALLINE YBa 2 Cu 3 Ox
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Ford, WK;erson, J;Rubenacker, GV;Drumheller, John E;Chen, CT;Hong, M;Kwo, J;Liou, SH; Ford, WK; erson, J; Rubenacker, GV; Drumheller, John E; Chen, CT; Hong, M; Kwo, J; Liou, SH; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T07:34:15Z |
Structure of Single-Crystal Gd 2 O 3 Films on GaAs (100)
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Kortan, AR; Hong, M; Kwo, J; Mannaerts, JP; Kopylov, N; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T07:34:15Z |
Surface exciton polariton in monoclinic HfO2: an electron energy-loss spectroscopy study
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Liou, SC;Chu, MW;Lee, YJ;Hong, M;Kwo, J;Chen, CH; Liou, SC; Chu, MW; Lee, YJ; Hong, M; Kwo, J; Chen, CH; MINGHWEI HONG |
Showing items 286-335 of 801 (17 Page(s) Totally)
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View [10|25|50] records per page
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