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Showing items 311-320 of 801 (81 Page(s) Totally)
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| 臺大學術典藏 |
2018-09-10T07:34:19Z |
Structure of epitaxial Gd 2 O 3 films grown on GaAs (100)
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Kortan, AR; Hong, M; Kwo, J; Mannaerts, JP; Kopylov, N; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T07:34:19Z |
Electrical response of superconducting YBa2Cu3O7- $δ$ to light
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Brocklesby, Wo S;Monroe, Don;Levi, AFJ;Hong, M;Liou, Sy\\_Hwang;Kwo, J;Rice, CE;Mankiewich, PM;Howard, RE; Brocklesby, Wo S; Monroe, Don; Levi, AFJ; Hong, M; Liou, Sy\\_Hwang; Kwo, J; Rice, CE; Mankiewich, PM; Howard, RE; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T07:34:18Z |
Insitu formation of YBa2Cu3Ox thin films by physical sputtering
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Yeh, J-J;Hong, M;Felder, RJ; Yeh, J-J; Hong, M; Felder, RJ; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T07:34:18Z |
Far-infrared transmission of Bi 2 Sr 2 CaCu 2 O 8 films
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Hughes, RA;Timusk, T;Cooper, SL;Thomas, GA;Yeh, JJ;Hong, M; Hughes, RA; Timusk, T; Cooper, SL; Thomas, GA; Yeh, JJ; Hong, M; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T07:34:18Z |
Cu valence and the formation of high Tc superconductor oxides studied by x-ray photoemission spectroscopy on 200 Å Bi-Sr-Ca-Cu oxide thin films
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Yeh, J-J;DiCenzo, SB;Hartford Jr, EH;Hong, M;Felder, RJ; Yeh, J-J; DiCenzo, SB; Hartford Jr, EH; Hong, M; Felder, RJ; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T07:34:18Z |
Research advances on III-V MOSFET electronics beyond Si CMOS
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Kwo, J;Hong, M; Kwo, J; Hong, M; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T07:34:18Z |
Ga2O3 (Gd2O3) on Ge without interfacial layers—energy band parameters and metal oxide semiconductor devices
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Chu, LK;Lin, TD;Huang, ML;Chu, RL;Chang, CC;Kwo, J;Hong, M; Chu, LK; Lin, TD; Huang, ML; Chu, RL; Chang, CC; Kwo, J; Hong, M; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T07:34:18Z |
Ga 2 O 3 (Gd 2 O 3)/GaAs power MOSFETs
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Wang, YC; Hong, M; Kuo, JM; Mannaerts, JP; Tsai, HS; Kwo, J; Krajewski, JJ; Chen, YK; Cho, AY; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T07:34:18Z |
Passivation of GaAs using gallium-gadolinium oxides
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Masaitis, RL; Sergent, AM; MINGHWEI HONG; Opila, RL; Kwo, J; Murphy, DW; Hong, M; Mannaerts, JP |
| 臺大學術典藏 |
2018-09-10T07:34:17Z |
Depletion-mode In 0.2 Ga 0.8 As/GaAs MOSFET with molecular beam epitaxy grown Al 2 O 3/Ga 2 O 3 (Gd 2 O 3) as gate dielectrics
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Lin, CA;Lin, TD;Chiang, TH;Chiu, HC;Chang, P;Hong, M;Kwo, J; Lin, CA; Lin, TD; Chiang, TH; Chiu, HC; Chang, P; Hong, M; Kwo, J; MINGHWEI HONG |
Showing items 311-320 of 801 (81 Page(s) Totally)
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