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"ou keng liang"???jsp.browse.items-by-author.description???
Showing items 156-166 of 166 (4 Page(s) Totally)
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| 臺北醫學大學 |
2005 |
Comparative study of polycrystalline Ti, amorphous Ti, and multiamoIrphous Ti as a barrier film for Cu interconnect
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歐耿良; Ou,Keng-Liang; Yu,Ming-Sun; Hsu,Ray-Quen; Lin,Ming-Hong. |
| 臺北醫學大學 |
2005 |
Effect of pulse-reverse current on microstructure and properties of electroformed nickel-iron mold insert
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歐耿良; 李勝揚; Yeh,Yih-Min; Chen,Chin-Sung; Tsai,Ming-Hung; Shyng,Yih-Chuen; Lee,Sheng-Yang; Ou,Keng-Liang |
| 臺北醫學大學 |
2005 |
Interfacial reactions and electrical properties of hafnium-based thin films in Cu/barrier/n+-p junction diodes
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歐耿良; 黃豪銘; 李勝揚; 林哲堂; Ou,Keng-Liang; Tsai,Ming-Hung; Huang,Haw-Ming; Chiou,Shi-Yung; Lin,Che-Tong; Lee,Sheng-Yang |
| 臺北醫學大學 |
2005 |
Novel Multilayered Ti/TiN Barrier for Al Metallization
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歐耿良; Wu,Wen-Fa; Tsai,Kou-Chiang; Chao,Chuen-Guang; Chen,Jen-Chung; Ou,Keng-Liang |
| 臺北醫學大學 |
2005 |
Reliability of Multistacked Tantalum-based Structure as the Barrier Film in Ultralarge Scale Integrated Metallization
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歐耿良; Ou,Keng-Liang; Wu,Chi-Chang; Hsu,Chiung-Chi; Chen,Chin-Sung; Shyng,Yih-Chuen; Wu,Wen-Fa |
| 臺北醫學大學 |
2004 |
High Cu Diffusion Resistance in Ultrathin Multi-quasi-amorphous CVD-Ti/TiNx Films
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Ou,Keng-Liang; Chiou,Shi-Yung; Lin,Ming-Hong |
| 臺北醫學大學 |
2004 |
Nanostructured TaN(O)/TaN barrier film formed by oxygen plasma treatment for copper interconnect
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Ou,Keng-Liang; Lin,Ming-Hong; Chiou,Shi-Yung |
| 臺北醫學大學 |
2003 |
Effects of nitrogen plasma treatment on tantalum diffusion barriers in copper metallization
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Wu,Wen-Fa; Ou,Keng-Liang; Chou,Chang-Pin; Wu,Chi-Chang |
| 臺北醫學大學 |
2003 |
PECVD-Ti/TiNx barrier with multilayered amorphous structure and high thermal stability for copper metallization
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Wu,Wen-Fa; Ou,Keng-Liang; Chou,Chang-Pin; Hsua,Jwo-Lun |
| 臺北醫學大學 |
2002 |
Improved TaN Barrier Layer Against Cu Diffusion by Formation of an Amorphous Layer Using Plasma Treatment
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Ou,Keng-Liang; Wu,Wen-Fa; Chou,Chang-Pin; Chiou,Shi-Yung; Wu,Chi-Chang |
| 臺北醫學大學 |
2001 |
Barrier Capability of TaNx Films Deposited by Different Nitrogen Flow Rate Against Cu Diffusion in Cu/TaNx/n+-p Junction Diodes
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Yang,Wen-Luh; Wu,Wen-Fa; Liu,Don-Gey; Wu,Chi-Chang; Ou,Keng Liang |
Showing items 156-166 of 166 (4 Page(s) Totally)
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