|
"panda debashis"的相關文件
顯示項目 1-10 / 16 (共2頁)
1 2 > >>
每頁顯示[10|25|50]項目
| 國立交通大學 |
2020-03-02T03:23:33Z |
Enhanced Switching Properties in TaOx Memristors Using Diffusion Limiting Layer for Synaptic Learning
|
Jung, Pei-Yu; Panda, Debashis; Chandrasekaran, Sridhar; Rajasekaran, Sailesh; Tseng, Tseung-Yuen |
| 國立交通大學 |
2019-12-13T01:12:22Z |
Enhanced Synaptic Linearity in ZnO-Based Invisible Memristive Synapse by Introducing Double Pulsing Scheme
|
Chandrasekaran, Sridhar; Simanjuntak, Firman Mangasa; Panda, Debashis; Tseng, Tseung-Yuen |
| 國立交通大學 |
2019-12-13T01:12:16Z |
Role of precursors mixing sequence on the properties of CoMn2O4 cathode materials and their application in pseudocapacitor
|
Pattanayak, Bhaskar; Simanjuntak, Firman Mangasa; Panda, Debashis; Yang, Chih-Chieh; Kumar, Amit; Phuoc-Anh Le; Wei, Kung-Hwa; Tseng, Tseung-Yuen |
| 國立交通大學 |
2019-10-05T00:08:41Z |
Improving linearity by introducing Al in HfO2 as a memristor synapse device
|
Chandrasekaran, Sridhar; Simanjuntak, Firman Mangasa; Saminathan, R.; Panda, Debashis; Tseng, Tseung-Yuen |
| 國立交通大學 |
2019-04-03T06:40:07Z |
Status and Prospects of ZnO-Based Resistive Switching Memory Devices
|
Simanjuntak, Firman Mangasa; Panda, Debashis; Wei, Kung-Hwa; Tseng, Tseung-Yuen |
| 國立交通大學 |
2018-08-21T05:53:11Z |
A Collective Study on Modeling and Simulation of Resistive Random Access Memory
|
Panda, Debashis; Sahu, Paritosh Piyush; Tseng, Tseung Yuen |
| 國立交通大學 |
2017-04-21T06:55:13Z |
Impacts of Co doping on ZnO transparent switching memory device characteristics
|
Simanjuntak, Firman Mangasa; Prasad, Om Kumar; Panda, Debashis; Lin, Chun-An; Tsai, Tsung-Ling; Wei, Kung-Hwa; Tseng, Tseung-Yuen |
| 國立交通大學 |
2015-12-02T02:59:22Z |
Enhancing the memory window of AZO/ZnO/ITO transparent resistive switching devices by modulating the oxygen vacancy concentration of the top electrode
|
Simanjuntak, Firman Mangasa; Panda, Debashis; Tsai, Tsung-Ling; Lin, Chun-An; Wei, Kung-Hwa; Tseng, Tseung-Yuen |
| 國立交通大學 |
2015-12-02T02:59:18Z |
Enhanced switching uniformity in AZO/ZnO1-x/ITO transparent resistive memory devices by bipolar double forming
|
Simanjuntak, Firman Mangasa; Panda, Debashis; Tsai, Tsung-Ling; Lin, Chun-An; Wei, Kung-Hwa; Tseng, Tseung-Yuen |
| 國立交通大學 |
2015-07-21T11:20:50Z |
Perovskite Oxides as Resistive Switching Memories: A Review
|
Panda, Debashis; Tseng, Tseung-Yuen |
顯示項目 1-10 / 16 (共2頁)
1 2 > >>
每頁顯示[10|25|50]項目
|
