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臺灣學術機構典藏系統 (Taiwan Academic Institutional Repository, TAIR)
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Institution Date Title Author
臺大學術典藏 2022-08-09T03:50:24Z Origin of Band Modulation in GeTe-Rich Ge-Sb-Te Thin Film Wong D.P.; Aminzare M.; Chou T.-L.; Pang C.-S.; Liu Y.-R.; Shen T.-H.; Chang B.K.; Lien H.-T.; Chang S.-T.; Chien C.-H.; Chen Y.-Y.; Chu M.-W.; Yang Y.-W.; Hsieh W.-P.; Rogl G.; Rogl P.; Kakefuda Y.; Mori T.; Chou M.-Y.; Chen L.-C.; Chen K.-H.; Wong D.P.; Pang C.-S.; Liu Y.-R.; Lien H.-T.; Chu M.-W.; Chen L.-C.; LI-CHYONG CHEN
臺大學術典藏 2021-07-26T10:03:52Z Origin of Band Modulation in GeTe-Rich Ge-Sb-Te Thin Film Wong D.P;Aminzare M;Chou T.-L;Pang C.-S;Liu Y.-R;Shen T.-H;Chang B.K;Lien H.-T;Chang S.-T;Chien C.-H;Chen Y.-Y;Chu M.-W;Yang Y.-W;Hsieh W.-P;Rogl G;Rogl P;Kakefuda Y;Mori T;Chou M.-Y;Chen L.-C;Chen K.-H.; Wong D.P; MING-YI CHOU et al.
臺大學術典藏 2018-09-10T14:54:16Z Photo-induced tunneling currents in MOS structures with various HfO 2/SiO2 stacking dielectrics Pang, C.-S.;Hwu, J.-G.; Pang, C.-S.; Hwu, J.-G.; JENN-GWO HWU
臺大學術典藏 2018-09-10T14:54:16Z Photo-induced tunneling currents in MOS structures with various HfO 2/SiO2 stacking dielectrics Pang, C.-S.;Hwu, J.-G.; Pang, C.-S.; Hwu, J.-G.; JENN-GWO HWU
臺大學術典藏 2018-09-10T14:54:16Z Improvement in the breakdown endurance of high-κ dielectric by utilizing stacking technology and adding sufficient interfacial layer Pang, C.-S.;Hwu, J.-G.; Pang, C.-S.; Hwu, J.-G.; JENN-GWO HWU
臺大學術典藏 2018-09-10T14:54:16Z Improvement in the breakdown endurance of high-κ dielectric by utilizing stacking technology and adding sufficient interfacial layer Pang, C.-S.;Hwu, J.-G.; Pang, C.-S.; Hwu, J.-G.; JENN-GWO HWU
臺大學術典藏 2018-09-10T09:44:20Z Effect of electrons trapping/de-trapping at Si-SiO2 interface on two-state current in MOS(p) structure with ultra-thin SiO2 by anodization Hwu, J.-G.; JENN-GWO HWU; Chen, T.-Y.;Pang, C.-S.;Hwu, J.-G.; Chen, T.-Y.; Pang, C.-S.
臺大學術典藏 2018-09-10T09:44:20Z Effect of electrons trapping/de-trapping at Si-SiO2 interface on two-state current in MOS(p) structure with ultra-thin SiO2 by anodization Hwu, J.-G.; JENN-GWO HWU; Chen, T.-Y.;Pang, C.-S.;Hwu, J.-G.; Chen, T.-Y.; Pang, C.-S.

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