臺灣學術機構典藏系統 (Taiwan Academic Institutional Repository, TAIR)

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Showing items 11-20 of 32 (4 Page(s) Totally)
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Institution	Date	Title	Author
國立東華大學	2006	Strain relaxation and induced defects in InAsSb self-assembled quantum dots	祁錦雲; Jim-Yong Chi; J. F. Chen; R. S. Hsiao; W. D. Huang; Y. H. Wu; L. Chang; J. S. Wang
國立東華大學	2006	Temperature-dependent optical properties of In0:34Ga0:66As1-xNx/GaAs single quantum well with high nitrogen content for 1:55 m application grown by molecular beam epitaxy	祁錦雲; Jim-Yong Chi; Fang-I. Lai ; S.Y. Kuo ; J.S. Wang ; R.S. Hsiao ; H.C. Kuo ; J. Chi; S.C. Wang; H.S. Wang; C.T. Liang; Y.F. Chen
國立東華大學	2006	Single-Mode Monolithic Quantum-Dot VCSEL in 1.3um with Sidemode Suppression Ratio Over 30 dB	祁錦雲; Jim-Yong Chi; Y. H. Chang; P. C. Peng; W. K. Tsai; Gray Lin; FangI Lai; R. S. Hsiao; H. P. Yang; H. C. Yu; K. F. Lin; J. Y. Chi; S. C. Wang; and H. C. Kuo
國立東華大學	2006	Effect of incorporating an InAlAs layer on electron emission in self-assembled InAs quantum dots	祁錦雲; Jim-Yong Chi; J. F. Chen;R. S. Hsiao; M. F. Hsieh; J. S. Wang; J. Y. Chi
國立東華大學	2006	Evolution of conduction and 5 interface states of laterally wet-oxidized AlGaAs with oxidation time	祁錦雲; Jim-Yong Chi; J. F. Chen; R. S. Hsiao; W. K. Hung; J. S. Wang
中原大學	2005-09-29	Strain relaxation in InAs/InGaAs quantum dots investigated by photoluminescence and capacitance-voltage profiling	J. F. Chen;R. S. Hsiao;Y. P. Chen;J. S. Wang;J. Y. Chi
中原大學	2005-07	Characterization of electron emission from relaxed InAs quantum dots capped with InGaAs	J. F. Chen;R. S. Hsiao;C. K. Wang;J. S. Wang;J. Y. Chi
國立東華大學	2005	1.3 μm Quantum Dot Vertical Cavity Surface Emitting Laser with External Light Injection	祁錦雲; Jim-Yong Chi; P. C. Peng; Y. H. Chang; H. C. Kuo; W. K. Tsai; Gray Lin;C. T. Lin; H. C. Yu; H. P. Yang; R. S. Hsiao; K. F. Lin;S. Chi; S. C. Wang
國立東華大學	2005	Strain relaxation in InAs/InGaAs quantum dots investigated by photoluminescence and capacitance-voltage profiling	祁錦雲; Jim-Yong Chi; J. F. Chen; R. S. Hsiao; Y. P. Chen; J.S.Wang
國立東華大學	2005	N incorporation into InGaAs cap layer in InAs self-assembled quantum dots	祁錦雲; Jim-Yong Chi; J. F. Chen; R. S. Hsiao; P. C. Hsieh; Y. J. Chen; Y. P. Chen; J. S. Wang; J. Y. Chi

Showing items 11-20 of 32 (4 Page(s) Totally)
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