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| 國立交通大學 |
2019-04-02T06:04:37Z |
Negative-Capacitance FinFET Inverter, Ring Oscillator, SRAM Cell, and Ft
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Li, Kai-Shin; Wei, Yun-Jie; Chen, Yi-Ju; Chiu, Wen-Cheng; Chen, Hsiu-Chih; Lee, Min-Hung; Chiu, Yu-Fan; Hsueh, Fu-Kuo; Wu, Bo-Wei; Chen, Pin-Guang; Lai, Tung-Yan; Chen, Chun-Chi; Shieh, Jia-Min; Yeh, Wen-Kuan; Salahuddin, Sayeef; Hu, Chenming |
| 國立交通大學 |
2019-04-02T06:00:51Z |
Gate Recessed Quasi-Normally OFF Al2O3/AlGaN/GaN MIS-HEMT With Low Threshold Voltage Hysteresis Using PEALD AlN Interfacial Passivation Layer
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Hsieh, Ting-En; Chang, Edward Yi; Song, Yi-Zuo; Lin, Yueh-Chin; Wang, Huan-Chung; Liu, Shin-Chien; Salahuddin, Sayeef; Hu, Chenming Calvin |
| 國立交通大學 |
2017-04-21T06:55:41Z |
A 60-nm-thick enhancement mode In0.65Ga0.35As/InAs/In0.65Ga0.35As high-electron-mobility transistor fabricated using Au/Pt/Ti non-annealed ohmic technology for low-power logic applications
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Fatah, Faiz Aizad; Lin, Yueh-Chin; Liu, Ren-Xuan; Yang, Kai-Chun; Lin, Tai-We; Hsu, Heng-Tung; Yang, Jung-Hsiang; Miyamoto, Yasuyuki; Iwai, Hiroshi; Hu, Chenming Calvin; Salahuddin, Sayeef; Chang, Edward Yi |
| 國立交通大學 |
2017-04-21T06:55:35Z |
Effects of the Variation of Ferroelectric Properties on Negative Capacitance FET Characteristics
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Lin, Cheng-I; Khan, Asif Islam; Salahuddin, Sayeef; Hu, Chenming |
| 國立交通大學 |
2014-12-08T15:36:59Z |
Electrical Characteristics of n, p-In0.53Ga0.47As MOSCAPs With In Situ PEALD-AlN Interfacial Passivation Layer
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Quang Ho Luc; Chang, Edward Yi; Hai Dang Trinh; Lin, Yueh Chin; Hong Quan Nguyen; Wong, Yuen Yee; Huy Binh Do; Salahuddin, Sayeef; Hu, Chenming Calvin |
| 國立交通大學 |
2014-12-08T15:36:34Z |
Gate Recessed Quasi-Normally OFF Al2O3/AlGaN/GaN MIS-HEMT With Low Threshold Voltage Hysteresis Using PEALD AlN Interfacial Passivation Layer
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Hsieh, Ting-En; Chang, Edward Yi; Song, Yi-Zuo; Lin, Yueh-Chin; Wang, Huan-Chung; Liu, Shin-Chien; Salahuddin, Sayeef; Hu, Chenming Calvin |
Showing items 1-6 of 6 (1 Page(s) Totally)
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