|
"sanders g d"的相關文件
顯示項目 1-7 / 7 (共1頁)
1
每頁顯示[10|25|50]項目
| 國立臺灣大學 |
2003 |
Coherent phonons, nanoseismology and THz radiation in InGaN/GaN heterostructures
|
Stanton, C. J.; Sanders, G. D.; R. Liu, G. W. Chern, Sun, C.-K.; J. S. Yahng, Y. D. Jho, J. Y. Sohn, E. Oh; Kim, D. S. |
| 國立臺灣大學 |
2000 |
The influence of surfaces and interfaces on coherent phonons in semiconductors
|
Sun, C.-K.; Liang, J.-C.; DenBaars, S. P.; Kim, D. S.; Cho, Y. D.; Sanders, G. D.; J. Simmons; Stanton, C. J. |
| 國立臺灣大學 |
2000 |
The influence of surfaces and interfaces on coherent phonons in semiconductors
|
Sun, C. -K.; Liang, J. C.; DenBaars, S. P.; Kim, D. S.; Cho, Y. D.; Sanders, G. D.; Simmons, J.; Stanton, C. J. |
| 國立臺灣大學 |
1996 |
Carrier-carrier scattering in the gain dynamics of InxGa1-xAs/AlyGa1-yAs diode lasers
|
Sanders, G. D.; Sun, C.-K.; Golubovic, B.; Fujimoto, J. G.; Stanton, C. J. |
| 國立臺灣大學 |
1995 |
Theory of carrier gain dynamics in InGaAs/AlGaAs strained-layer single-quantum-well diode lasers
|
Sanders, G. D.; Stanton, C. J.; Sun, C.-K.; Golubovic, B.; Fujimoto, J. G. |
| 國立臺灣大學 |
1994-01 |
“Femtosecond Spectral Hole Burning in InGaAs/AlGaAs Strained Layer Single-Quantum-Well Diode Lasers,” in Springer Series in Chemical Physics: Ultrafast Phenomena IX
|
Sun, C.-K.; Golubovic, B.; Choi, H. K.; Wang, C. A.; Sanders, G. D.; Stanton, C. J.; Fujimoto, J. G. |
| 國立臺灣大學 |
1994 |
Carrier-gain dynamics in InxGa1-xAs/AlxGa1-xAs strained-layer single-quantum-well diode lasers – Comparison of theory and experiment
|
Sanders, G. D.; Sun, C.-K.; Fujimoto, J. G.; Choi, H. K.; Wang, C. A.; Stanton, C. J. |
顯示項目 1-7 / 7 (共1頁)
1
每頁顯示[10|25|50]項目
|
