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Showing items 11-20 of 90 (9 Page(s) Totally)
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| 國立交通大學 |
2019-04-02T05:58:59Z |
Stabilizing Resistive Switching Characteristics by Inserting Indium-Tin-Oxide Layer as Oxygen Ion Reservoir in HfO2-Based Resistive Random Access Memory
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Chen, Po-Hsun; Su, Yu-Ting; Chang, Fu-Chen |
| 義守大學 |
2019-02 |
網路評論對消費者購買意願之影響
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蘇玉婷; Su, Yu-Ting |
| 國立政治大學 |
2019 |
結合ESG揭露分數與價格動能策略之分析
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蘇鈺婷; Su, Yu-Ting |
| 國立政治大學 |
2019 |
設計發包接案平台的使用者介面與服務流程優化
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蘇郁庭; Su, Yu-Ting |
| 亞洲大學 |
2019 |
文化基金會組織變革之研究 -桃園市文化基金會個案分析
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蘇毓婷; SU, YU-TING |
| 佛光大學 |
2019 |
照顧負擔與社會支持對失智患者醫療費用之影響分析
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蘇郁庭; SU,YU-TING |
| 國立交通大學 |
2018-08-21T05:54:16Z |
Attaining resistive switching characteristics and selector properties by varying forming polarities in a single HfO2-based RRAM device with a vanadium electrode
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Lin, Chih-Yang; Chen, Po-Hsun; Chang, Ting-Chang; Chang, Kuan-Chang; Zhang, Sheng-Dong; Tsai, Tsung-Ming; Pan, Chih-Hung; Chen, Min-Chen; Su, Yu-Ting; Tseng, Yi-Ting; Chang, Yao-Feng; Chen, Ying-Chen; Huang, Hui-Chun; Sze, Simon M. |
| 國立交通大學 |
2018-08-21T05:54:04Z |
Nonvolatile reconfigurable sequential logic in a HfO2 resistive random access memory array
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Zhou, Ya-Xiong; Li, Yi; Su, Yu-Ting; Wang, Zhuo-Rui; Shih, Ling-Yi; Chang, Ting-Chang; Chang, Kuan-Chang; Long, Shi-Bing; Sze, Simon M.; Miao, Xiang-Shui |
| 國立交通大學 |
2018-08-21T05:53:56Z |
Effect of charge quantity on conduction mechanism of high-and low-resistance states during forming process in a one-transistor-one-resistor resistance random access memory
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Wu, Cheng-Hsien; Chang, Ting-Chang; Tsai, Tsung-Ming; Chang, Kuan-Chang; Chu, Tian-Jian; Pan, Chih-Hung; Su, Yu-Ting; Chen, Po-Hsun; Lin, Shih-Kai; Hu, Shih-Jie; Sze, Simon M. |
| 國立交通大學 |
2018-08-21T05:53:49Z |
Reducing Forming Voltage by Applying Bipolar Incremental Step Pulse Programming in a 1T1R Structure Resistance Random Access Memory
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Zheng, Hao-Xuan; Chang, Ting-Chang; Xue, Kan-Hao; Su, Yu-Ting; Wu, Cheng-Hsien; Shih, Chih-Cheng; Tseng, Yi-Ting; Chen, Wen-Chung; Huang, Wei-Chen; Chen, Chun-Kuei; Miao, Xiang-Shui; Sze, Simon M. |
Showing items 11-20 of 90 (9 Page(s) Totally)
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