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"sze simon m"的相关文件
显示项目 226-235 / 238 (共24页)
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| 國立成功大學 |
2013-02-01 |
Improvement of Resistive Switching Characteristics by Thermally Assisted Forming Process for SiO2-Based Structure
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Chen, Yu-Ting; Chang, Ting-Chang; Yang, Po-Chun; Huang, Jheng-Jie; Tseng, Hsueh-Chih; Huang, Hui-Chun; Yang, Jyun-Bao; Chu, Ann-Kuo; Gan, Der-Shin; Tsai, Ming-Jinn; Sze, Simon M. |
| 國立成功大學 |
2013-02-01 |
Investigating bipolar resistive switching characteristics in filament type and interface type BON-based resistive switching memory
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Tseng, Hsueh-Chih; Chang, Ting-Chang; Cheng, Kai-Hung; Huang, Jheng-Jie; Chen, Yu-Ting; Jian, Fu-Yen; Sze, Simon M.; Tsai, Ming-Jinn; Chu, Ann-Kuo; Wang, Ying-Lang |
| 國立成功大學 |
2013-01-15 |
The resistive switching characteristics in TaON films for nonvolatile memory applications
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Chen, Min-Chen; Chang, Ting-Chang; Chiu, Yi-Chieh; Chen, Shih-Cheng; Huang, Sheng-Yao; Chang, Kuan-Chang; Tsai, Tsung-Ming; Yang, Kai-Hsiang; Sze, Simon M.; Tsai, Ming-Jinn |
| 國立成功大學 |
2013-01-15 |
Influence of forming process on resistance switching characteristics of In2O3/SiO2 bi-layer
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Huang, Jheng-Jie; Chang, Ting-Chang; Yang, Po-Chun; Chen, Yu-Ting; Tseng, Hsueh-Chih; Yang, Jyun-Bao; Sze, Simon M.; Chu, Ann-Kuo; Tsai, Ming-Jinn |
| 國立成功大學 |
2013-01-15 |
Role of InGaOx resistive switching characteristics on the performances of resistance random access memory of Pt/IGO/TiN device
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Yang, Jyun-Bao; Chang, Ting-Chang; Huang, Jheng-Jie; Chen, Yu-Ting; Yang, Po-Chun; Tseng, Hsueh-Chih; Chu, Ann-Kuo; Sze, Simon M.; Tsai, Ming-Jinn |
| 國立成功大學 |
2013 |
Anomalous Gate Current Hump after Dynamic Negative Bias Stress and Negative-Bias Temperature-Instability in p-MOSFETs with HfxZr1-xO2 and HfO2/Metal Gate Stacks
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Ho, Szu-Han; Chang, Ting-Chang; Wu, Chi-Wei; Lo, Wen-Hung; Chen, Ching-En; Tsai, Jyun-Yu; Chen, Hua-Mao; Liu, Guan-Ru; Tseng, Tseung-Yuen; Cheng, Osbert; Huang, Cheng-Tung; Chen, Daniel; Sze, Simon M. |
| 國立成功大學 |
2012-12 |
Origin of Hopping Conduction in Sn-Doped Silicon Oxide RRAM With Supercritical CO2 Fluid Treatment
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Tsai, Tsung-Ming; Chang, Kuan-Chang; Chang, Ting-Chang; Chang, Geng-Wei; Syu, Yong-En; Su, Yu-Ting; Liu, Guan-Ru; Liao, Kuo-Hsiao; Chen, Min-Chen; Huang, Hui-Chun; Tai, Ya-Hsiang; Gan, Der-Shin; Ye, Cong; Wang, Hao; Sze, Simon M. |
| 國立成功大學 |
2012-12 |
Bipolar Resistive RAM Characteristics Induced by Nickel Incorporated Into Silicon Oxide Dielectrics for IC Applications
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Tsai, Tsung-Ming; Chang, Kuan-Chang; Chang, Ting-Chang; Syu, Yong-En; Chuang, Siang-Lan; Chang, Geng-Wei; Liu, Guan-Ru; Chen, Min-Chen; Huang, Hui-Chun; Liu, Shih-Kun; Tai, Ya-Hsiang; Gan, Der-Shin; Yang, Ya-Liang; Young, Tai-Fa; Tseng, Bae-Heng; Chen, Kai-Huang; Tsai, Ming-Jinn; Ye, Cong; Wang, Hao; Sze, Simon M. |
| 國立成功大學 |
2012-10 |
Influence of Oxygen Concentration on Resistance Switching Characteristics of Gallium Oxide
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Huang, Jheng-Jie; Chang, Ting-Chang; Yang, Jyun-Bao; Chen, Shih-Ching; Yang, Po-Chun; Chen, Yu-Ting; Tseng, Hsueh-Chih; Sze, Simon M.; Chu, Ann-Kuo; Tsai, Ming-Jinn |
| 國立成功大學 |
2012-09-10 |
Dehydroxyl effect of Sn-doped silicon oxide resistance random access memory with supercritical CO2 fluid treatment
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Tsai, Tsung-Ming; Chang, Kuan-Chang; Chang, Ting-Chang; Syu, Yong-En; Liao, Kuo-Hsiao; Tseng, Bae-Heng; Sze, Simon M. |
显示项目 226-235 / 238 (共24页)
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