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"sze simon m"
Showing items 141-190 of 238 (5 Page(s) Totally)
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| 國立交通大學 |
2014-12-08T15:32:05Z |
Endurance Improvement Technology With Nitrogen Implanted in the Interface of WSiOx Resistance Switching Device
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Syu, Yong-En; Zhang, Rui; Chang, Ting-Chang; Tsai, Tsung-Ming; Chang, Kuan-Chang; Lou, Jen-Chung; Young, Tai-Fa; Chen, Jung-Hui; Chen, Min-Chen; Yang, Ya-Liang; Shih, Chih-Cheng; Chu, Tian-Jian; Chen, Jian-Yu; Pan, Chih-Hung; Su, Yu-Ting; Huang, Hui-Chun; Gan, Der-Shin; Sze, Simon M. |
| 國立交通大學 |
2014-12-08T15:31:55Z |
Electrical conduction mechanism of Zn:SiOx resistance random access memory with supercritical CO2 fluid process
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Chang, Kuan-Chang; Tsai, Tsung-Ming; Zhang, Rui; Chang, Ting-Chang; Chen, Kai-Huang; Chen, Jung-Hui; Young, Tai-Fa; Lou, J. C.; Chu, Tian-Jian; Shih, Chih-Cheng; Pan, Jhih-Hong; Su, Yu-Ting; Syu, Yong-En; Tung, Cheng-Wei; Chen, Min-Chen; Wu, Jia-Jie; Hu, Ying; Sze, Simon M. |
| 國立交通大學 |
2014-12-08T15:31:32Z |
The effect of high/low permittivity in bilayer HfO2/BN resistance random access memory
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Huang, Jen-Wei; Zhang, Rui; Chang, Ting-Chang; Tsai, Tsung-Ming; Chang, Kuan-Chang; Lou, J. C.; Young, Tai-Fa; Chen, Jung-Hui; Chen, Hsin-Lu; Pan, Yin-Chih; Huang, Xuan; Zhang, Fengyan; Syu, Yong-En; Sze, Simon M. |
| 國立交通大學 |
2014-12-08T15:31:21Z |
Insertion of a Si layer to reduce operation current for resistive random access memory applications
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Chen, Yu-Ting; Chang, Ting-Chang; Peng, Han-Kuang; Tseng, Hsueh-Chih; Huang, Jheng-Jie; Yang, Jyun-Bao; Chu, Ann-Kuo; Young, Tai-Fa; Sze, Simon M. |
| 國立交通大學 |
2014-12-08T15:31:21Z |
Performance and characteristics of double layer porous silicon oxide resistance random access memory
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Tsai, Tsung-Ming; Chang, Kuan-Chang; Zhang, Rui; Chang, Ting-Chang; Lou, J. C.; Chen, Jung-Hui; Young, Tai-Fa; Tseng, Bae-Heng; Shih, Chih-Cheng; Pan, Yin-Chih; Chen, Min-Chen; Pan, Jhih-Hong; Syu, Yong-En; Sze, Simon M. |
| 國立交通大學 |
2014-12-08T15:31:09Z |
Enhancement of the stability of resistive switching characteristics by conduction path reconstruction
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Huang, Jheng-Jie; Chang, Ting-Chang; Yu, Chih-Cheng; Huang, Hui-Chun; Chen, Yu-Ting; Tseng, Hsueh-Chih; Yang, Jyun-Bao; Sze, Simon M.; Gan, Der-Shin; Chu, Ann-Kuo; Lin, Jian-Yang; Tsai, Ming-Jinn |
| 國立交通大學 |
2014-12-08T15:30:43Z |
Hopping conduction distance dependent activation energy characteristics of Zn:SiO2 resistance random access memory devices
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Chen, Kai-Huang; Zhang, Rui; Chang, Ting-Chang; Tsai, Tsung-Ming; Chang, Kuan-Chang; Lou, J. C.; Young, Tai-Fa; Chen, Jung-Hui; Shih, Chih-Cheng; Tung, Cheng-Wei; Syu, Yong-En; Sze, Simon M. |
| 國立交通大學 |
2014-12-08T15:30:42Z |
Atomic-level quantized reaction of HfOx memristor
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Syu, Yong-En; Chang, Ting-Chang; Lou, Jyun-Hao; Tsai, Tsung-Ming; Chang, Kuan-Chang; Tsai, Ming-Jinn; Wang, Ying-Lang; Liu, Ming; Sze, Simon M. |
| 國立交通大學 |
2014-12-08T15:30:41Z |
Hopping Effect of Hydrogen-Doped Silicon Oxide Insert RRAM by Supercritical CO2 Fluid Treatment
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Chang, Kuan-Chang; Pan, Chih-Hung; Chang, Ting-Chang; Tsai, Tsung-Ming; Zhang, Rui; Lou, Jen-Chung; Young, Tai-Fa; Chen, Jung-Hui; Shih, Chih-Cheng; Chu, Tian-Jian; Chen, Jian-Yu; Su, Yu-Ting; Jiang, Jhao-Ping; Chen, Kai-Huang; Huang, Hui-Chun; Syu, Yong-En; Gan, Der-Shin; Sze, Simon M. |
| 國立交通大學 |
2014-12-08T15:30:41Z |
Origin of Hopping Conduction in Graphene-Oxide-Doped Silicon Oxide Resistance Random Access Memory Devices
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Chang, Kuan-Chang; Zhang, Rui; Chang, Ting-Chang; Tsai, Tsung-Ming; Lou, J. C.; Chen, Jung-Hui; Young, Tai-Fa; Chen, Min-Chen; Yang, Ya-Liang; Pan, Yin-Chih; Chang, Geng-Wei; Chu, Tian-Jian; Shih, Chih-Cheng; Chen, Jian-Yu; Pan, Chih-Hung; Su, Yu-Ting; Syu, Yong-En; Tai, Ya-Hsiang; Sze, Simon M. |
| 國立交通大學 |
2014-12-08T15:30:31Z |
The Effect of Silicon Oxide Based RRAM with Tin Doping (vol 15, pg H65, 2012)
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Chang, Kuan-Chang; Tsai, Tsung-Ming; Chang, Ting-Chang; Syu, Yong-En; Liao, Kuo-Hsiao; Chuang, Siang-Lan; Li, Cheng-Hua; Gan, Der-Shin; Sze, Simon M. |
| 國立交通大學 |
2014-12-08T15:30:22Z |
Charge Quantity Influence on Resistance Switching Characteristic During Forming Process
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Chu, Tian-Jian; Chang, Ting-Chang; Tsai, Tsung-Ming; Wu, Hsing-Hua; Chen, Jung-Hui; Chang, Kuan-Chang; Young, Tai-Fa; Chen, Kai-Hsang; Syu, Yong-En; Chang, Geng-Wei; Chang, Yao-Feng; Chen, Min-Chen; Lou, Jyun-Hao; Pan, Jhih-Hong; Chen, Jian-Yu; Tai, Ya-Hsiang; Ye, Cong; Wang, Hao; Sze, Simon M. |
| 國立交通大學 |
2014-12-08T15:30:22Z |
Low Temperature Improvement Method on Zn:SiOx Resistive Random Access Memory Devices
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Chang, Kuan-Chang; Tsai, Tsung-Ming; Chang, Ting-Chang; Wu, Hsing-Hua; Chen, Kai-Huang; Chen, Jung-Hui; Young, Tai-Fa; Chu, Tian-Jian; Chen, Jian-Yu; Pan, Chih-Hung; Su, Yu-Ting; Syu, Yong-En; Tung, Cheng-Wei; Chang, Geng-Wei; Chen, Min-Chen; Huang, Hui-Chun; Tai, Ya-Hsiang; Gan, Der-Shin; Wu, Jia-Jie; Hu, Ying; Sze, Simon M. |
| 國立交通大學 |
2014-12-08T15:29:55Z |
Resistive switching characteristics of gallium oxide for nonvolatile memory application
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Yang, Jyun-Bao; Chang, Ting-Chang; Huang, Jheng-Jie; Chen, Shih-Ching; Yang, Po-Chun; Chen, Yu-Ting; Tseng, Hsueh-Chih; Sze, Simon M.; Chu, Ann-Kuo; Tsai, Ming-Jinn |
| 國立交通大學 |
2014-12-08T15:29:55Z |
Investigating bipolar resistive switching characteristics in filament type and interface type BON-based resistive switching memory
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Tseng, Hsueh-Chih; Chang, Ting-Chang; Cheng, Kai-Hung; Huang, Jheng-Jie; Chen, Yu-Ting; Jian, Fu-Yen; Sze, Simon M.; Tsai, Ming-Jinn; Chu, Ann-Kuo; Wang, Ying-Lang |
| 國立交通大學 |
2014-12-08T15:29:51Z |
Characteristics and Mechanisms of Silicon-Oxide-Based Resistance Random Access Memory
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Chang, Kuan-Chang; Tsai, Tsung-Ming; Chang, Ting-Chang; Wu, Hsing-Hua; Chen, Jung-Hui; Syu, Yong-En; Chang, Geng-Wei; Chu, Tian-Jian; Liu, Guan-Ru; Su, Yu-Ting; Chen, Min-Chen; Pan, Jhih-Hong; Chen, Jian-Yu; Tung, Cheng-Wei; Huang, Hui-Chun; Tai, Ya-Hsiang; Gan, Der-Shin; Sze, Simon M. |
| 國立交通大學 |
2014-12-08T15:29:34Z |
Influence of molybdenum doping on the switching characteristic in silicon oxide-based resistive switching memory
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Chen, Yu-Ting; Chang, Ting-Chang; Huang, Jheng-Jie; Tseng, Hsueh-Chih; Yang, Po-Chun; Chu, Ann-Kuo; Yang, Jyun-Bao; Huang, Hui-Chun; Gan, Der-Shin; Tsai, Ming-Jinn; Sze, Simon M. |
| 國立交通大學 |
2014-12-08T15:29:13Z |
Investigation of an anomalous hump in gate current after negative-bias temperature-instability in HfO2/metal gate p-channel metal-oxide-semiconductor field-effect transistors
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Ho, Szu-Han; Chang, Ting-Chang; Wu, Chi-Wei; Lo, Wen-Hung; Chen, Ching-En; Tsai, Jyun-Yu; Liu, Guan-Ru; Chen, Hua-Mao; Lu, Ying-Shin; Wang, Bin-Wei; Tseng, Tseung-Yuen; Cheng, Osbert; Huang, Cheng-Tung; Sze, Simon M. |
| 國立交通大學 |
2014-12-08T15:29:12Z |
Influence of forming process on resistance switching characteristics of In2O3/SiO2 bi-layer
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Huang, Jheng-Jie; Chang, Ting-Chang; Yang, Po-Chun; Chen, Yu-Ting; Tseng, Hsueh-Chih; Yang, Jyun-Bao; Sze, Simon M.; Chu, Ann-Kuo; Tsai, Ming-Jinn |
| 國立交通大學 |
2014-12-08T15:29:12Z |
The resistive switching characteristics in TaON films for nonvolatile memory applications
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Chen, Min-Chen; Chang, Ting-Chang; Chiu, Yi-Chieh; Chen, Shih-Cheng; Huang, Sheng-Yao; Chang, Kuan-Chang; Tsai, Tsung-Ming; Yang, Kai-Hsiang; Sze, Simon M.; Tsai, Ming-Jinn |
| 國立交通大學 |
2014-12-08T15:28:51Z |
Analysis of anomalous traps measured by charge pumping technique in HfO2/metal gate n-channel metal-oxide-semiconductor field-effect transistors
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Ho, Szu-Han; Chang, Ting-Chang; Lu, Ying-shin; Lo, Wen-Hung; Chen, Ching-En; Tsai, Jyun-Yu; Chen, Hua-Mao; Wu, Chi-Wei; Luo, Hung-Ping; Liu, Guan-Ru; Tseng, Tseung-Yuen; Cheng, Osbert; Huang, Cheng-Tung; Sze, Simon M. |
| 國立交通大學 |
2014-12-08T15:28:27Z |
Origin of Hopping Conduction in Sn-Doped Silicon Oxide RRAM With Supercritical CO2 Fluid Treatment
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Tsai, Tsung-Ming; Chang, Kuan-Chang; Chang, Ting-Chang; Chang, Geng-Wei; Syu, Yong-En; Su, Yu-Ting; Liu, Guan-Ru; Liao, Kuo-Hsiao; Chen, Min-Chen; Huang, Hui-Chun; Tai, Ya-Hsiang; Gan, Der-Shin; Ye, Cong; Wang, Hao; Sze, Simon M. |
| 國立交通大學 |
2014-12-08T15:28:27Z |
Bipolar Resistive RAM Characteristics Induced by Nickel Incorporated Into Silicon Oxide Dielectrics for IC Applications
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Tsai, Tsung-Ming; Chang, Kuan-Chang; Chang, Ting-Chang; Syu, Yong-En; Chuang, Siang-Lan; Chang, Geng-Wei; Liu, Guan-Ru; Chen, Min-Chen; Huang, Hui-Chun; Liu, Shih-Kun; Tai, Ya-Hsiang; Gan, Der-Shin; Yang, Ya-Liang; Young, Tai-Fa; Tseng, Bae-Heng; Chen, Kai-Huang; Tsai, Ming-Jinn; Ye, Cong; Wang, Hao; Sze, Simon M. |
| 國立交通大學 |
2014-12-08T15:28:19Z |
Dehydroxyl effect of Sn-doped silicon oxide resistance random access memory with supercritical CO2 fluid treatment
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Tsai, Tsung-Ming; Chang, Kuan-Chang; Chang, Ting-Chang; Syu, Yong-En; Liao, Kuo-Hsiao; Tseng, Bae-Heng; Sze, Simon M. |
| 國立交通大學 |
2014-12-08T15:28:02Z |
Influence of Oxygen Concentration on Resistance Switching Characteristics of Gallium Oxide
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Huang, Jheng-Jie; Chang, Ting-Chang; Yang, Jyun-Bao; Chen, Shih-Ching; Yang, Po-Chun; Chen, Yu-Ting; Tseng, Hsueh-Chih; Sze, Simon M.; Chu, Ann-Kuo; Tsai, Ming-Jinn |
| 國立交通大學 |
2014-12-08T15:27:50Z |
Investigation for coexistence of dual resistive switching characteristics in DyMn(2)O(5) memory devices
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Tsai, Yu-Ting; Chang, Ting-Chang; Huang, Wei-Li; Huang, Chih-Wen; Syu, Yong-En; Chen, Shih-Cheng; Sze, Simon M.; Tsai, Ming-Jinn; Tseng, Tseung-Yuen |
| 國立交通大學 |
2014-12-08T15:27:20Z |
Nitric Acid Oxidized ZrO(2) as the Tunneling Oxide of Cobalt Silicide Nanocrystal Memory Devices
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Hu, Chih-Wei; Chang, Ting-Chang; Tu, Chun-Hao; Chen, Yang-Dong; Lin, Chao-Cheng; Chen, Min-Chen; Lin, Jian-Yang; Sze, Simon M.; Tseng, Tseung-Yuen |
| 國立交通大學 |
2014-12-08T15:27:14Z |
Resistive switching characteristics of Sm(2)O(3) thin films for nonvolatile memory applications
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Huang, Sheng-Yao; Chang, Ting-Chang; Chen, Min-Chen; Chen, Shih-Ching; Lo, Hung-Ping; Huang, Hui-Chun; Gan, Der-Shin; Sze, Simon M.; Tsai, Ming-Jinn |
| 國立交通大學 |
2014-12-08T15:25:11Z |
Fabrication of pattern-depended metal induced lateral crystallization polysilicon thin film transistors with NH3 plasma passivation effects
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Chou, Cheng-Wei; Wu, Yung-Chun; Wu, Yuan-Chun; Chang, Ting-Chang; Liu, Po-Tsun; Lou, Jen-Chung; Huang, Wen-Jun; Chang, Chun-Yen; Sze, Simon M. |
| 國立交通大學 |
2014-12-08T15:24:05Z |
Analysis of an anomalous hump in gate current after dynamic negative bias stress in HfxZr1-xO2/metal gate p-channel metal-oxide-semiconductor field-effect transistors
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Ho, Szu-Han; Chang, Ting-Chang; Wu, Chi-Wei; Lo, Wen-Hung; Chen, Ching-En; Tsai, Jyun-Yu; Luo, Hung-Ping; Tseng, Tseung-Yuen; Cheng, Osbert; Huang, Cheng-Tung; Sze, Simon M. |
| 國立交通大學 |
2014-12-08T15:23:05Z |
Effect of Top Electrode Material on Resistive Switching Characteristics in MnO2 Nonvolatile Memory Devices
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Tsai, Yu-Ting; Chang, Ting-Chang; Lin, Chao-Cheng; Chiang, Lan-Shin; Chen, Shih-Cheng; Sze, Simon M.; Tseng, Tseung-Yuen |
| 國立交通大學 |
2014-12-08T15:21:54Z |
Asymmetric Carrier Conduction Mechanism by Tip Electric Field in WSiOX Resistance Switching Device
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Syu, Yong-En; Chang, Ting-Chang; Tsai, Tsung-Ming; Chang, Geng-Wei; Chang, Kuan-Chang; Lou, Jyun-Hao; Tai, Ya-Hsiang; Tsai, Ming-Jinn; Wang, Ying-Lang; Sze, Simon M. |
| 國立交通大學 |
2014-12-08T15:21:35Z |
Resistive switching characteristics of ytterbium oxide thin film for nonvolatile memory application
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Tseng, Hsueh-Chih; Chang, Ting-Chang; Huang, Jheng-Jie; Chen, Yu-Ting; Yang, Po-Chun; Huang, Hui-Chun; Gan, Der-Shin; Ho, New-Jin; Sze, Simon M.; Tsai, Ming-Jinn |
| 國立交通大學 |
2014-12-08T15:21:35Z |
Reducing operation current of Ni-doped silicon oxide resistance random access memory by supercritical CO(2) fluid treatment
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Chang, Kuan-Chang; Tsai, Tsung-Ming; Chang, Ting-Chang; Syu, Yong-En; Wang, Chia-C.; Chuang, Siang-Lan; Li, Cheng-Hua; Gan, Der-Shin; Sze, Simon M. |
| 國立交通大學 |
2014-12-08T15:21:32Z |
The Effect of Silicon Oxide Based RRAM with Tin Doping
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Chang, Kuan-Chang; Tsai, Tsung-Ming; Chang, Ting-Chang; Syu, Yong-En; Chuang, Siang-Lan; Li, Cheng-Hua; Gan, Der-Shin; Sze, Simon M. |
| 國立交通大學 |
2014-12-08T15:21:29Z |
Silicon introduced effect on resistive switching characteristics of WO(X) thin films
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Syu, Yong-En; Chang, Ting-Chang; Tsai, Tsung-Ming; Chang, Geng-Wei; Chang, Kuan-Chang; Tai, Ya-Hsiang; Tsai, Ming-Jinn; Wang, Ying-Lang; Sze, Simon M. |
| 國立交通大學 |
2014-12-08T15:20:50Z |
Influence of Oxygen Partial Pressure on Resistance Random Access Memory Characteristics of Indium Gallium Zinc Oxide
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Chen, Min-Chen; Chang, Ting-Chang; Huang, Sheng-Yao; Chang, Guan-Chang; Chen, Shih-Cheng; Huang, Hui-Chun; Hu, Chih-Wei; Sze, Simon M.; Tsai, Tsung-Ming; Gan, Der-Shin; Yeh (Huang), Fon-Shan; Tsai, Ming-Jinn |
| 國立交通大學 |
2014-12-08T15:17:44Z |
A fabrication of germanium nanocrystal embedded in silicon-oxygen-nitride layer
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Tu, Chun-Hao; Chang, Ting-Chang; Liu, Po-Tsun; Liu, Hsin-Chou; Weng, Chi-Feng; Shy, Jang-Hung; Tseng, Bae-Heng; Tseng, Tseung-Yuan; Sze, Simon M.; Chang, Chun-Yen |
| 國立交通大學 |
2014-12-08T15:17:43Z |
Electrical enhancement of solid phase crystallized poly-Si thin-film transistors with fluorine ion implantation
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Tu, Chun-Hao; Chang, Ting- Chang; Liu, Po-Tsun; Chen, Chih-Hung; Yang, Che-Yu; Wu, Yung-Chun; Liu, Hsin-Chou; Chang, Li-Ting; Tsai, Chia-Chou; Sze, Simon M.; Chang, Chun-Yen |
| 國立交通大學 |
2014-12-08T15:16:10Z |
Formation of germanium nanocrystals embedded in silicon-oxygen-nitride layer
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Tu, Chun-Hao; Chang, Ting-Chang; Liu, Po-Tsun; Liu, Hsin-Chou; Tsai, Chia-Chou; Chang, Li-Ting; Tseng, Tseung-Yuan; Sze, Simon M.; Chang, Chun-Yen |
| 國立交通大學 |
2014-12-08T15:15:37Z |
Improved memory window for Ge nanocrystals embedded in SiON layer
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Tu, Chun-Hao; Chang, Ting-Chang; Liu, Po-Tsun; Liu, Hsin-Chou; Sze, Simon M.; Chang, Chun-Yen |
| 國立交通大學 |
2014-12-08T15:15:11Z |
Formation of germanium nanocrystals embedded in a silicon-oxygen-nitride layer
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Tu, Chun-Hao; Chang, Ting-Chang; Liu, Po-Tsun; Weng, Chi-Feng; Liu, Hsin-Chou; Chang, Li-Ting; Lee, Sheng-Kai; Chen, Wei-Ren; Sze, Simon M.; Chang, Chun-Yen |
| 國立交通大學 |
2014-12-08T15:14:39Z |
Improved performance of F-ions-implanted poly-Si thin-film transistors using solid phase crystallization and excimer laser crystallization
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Tu, Chun-Hao; Chang, Ting-Chang; Liu, Po-Tsun; Yang, Che-Yu; Feng, Li-Wei; Tsai, Chia-Chou; Chang, Li-Ting; Wu, Yung-Chun; Sze, Simon M.; Chang, Chun-Yen |
| 國立交通大學 |
2014-12-08T15:13:22Z |
Formation of Ge nanocrystals using Si1.33Ge0.67O2 and Si2.67Ge1.33N2 film for nonvolatile memory application
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Chen, Wei-Ren; Chang, Ting-Chang; Hsieh, Yen-Ting; Sze, Simon M.; Chang, Chun-Yen |
| 國立交通大學 |
2014-12-08T15:13:06Z |
Formation and nonvolatile memory effect of nickel-oxygen-silicon nanoparticles
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Chen, Wei-Ren; Chang, Ting-Chang; Yeh, Jui-Lung; Sze, Simon M.; Chang, Chun-Yen; Chen, Uei-Shin |
| 國立交通大學 |
2014-12-08T15:12:52Z |
Formation of Mo silicide nanodot memory by rapid thermal annealing dual electron-gun evaporated Mo-Si layer
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Lin, Chao-Cheng; Chang, Ting-Chang; Tu, Chun-Hao; Chen, Wei-Ren; Hu, Chih-Wei; Sze, Simon M.; Chang, Chun-Yen; Tseng, Tseung-Yuen |
| 國立交通大學 |
2014-12-08T15:12:25Z |
Performance enhancement of excimer laser crystallized poly-Si thin film transistors with fluorine implantation technology
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Tu, Chun-Hao; Chang, Ting-Chang; Liu, Po-Tsun; Yang, Che-Yu; Feng, Li-Wei; Wu, Yung-Chun; Sze, Simon M.; Chang, Chun-Yen |
| 國立交通大學 |
2014-12-08T15:12:18Z |
Formation of cobalt-silicide nanocrystals in Ge-doped dielectric layer for the application on nonvolatile memory
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Hu, Chih-Wei; Chang, Ting-Chang; Liu, Po-Tsun; Tu, Chun-Hao; Lee, Sheng-Kai; Sze, Simon M.; Chang, Chun-Yen; Chiou, Bi-Shiou; Tseng, Tseung-Yuan |
| 國立交通大學 |
2014-12-08T15:11:50Z |
Redox Reaction Switching Mechanism in RRAM Device With Pt/CoSiO(X)/TiN Structure
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Syu, Yong-En; Chang, Ting-Chang; Tsai, Tsung-Ming; Hung, Ya-Chi; Chang, Kuan-Chang; Tsai, Ming-Jinn; Kao, Ming-Jer; Sze, Simon M. |
| 國立交通大學 |
2014-12-08T15:10:32Z |
Charge storage characteristics of Mo nanocrystal dependence on Mo oxide reduction
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Lin, Chao-Cheng; Chang, Ting-; Tu, Chun-Hao; Chen, Wei-Ren; Hu, Chih-Wei; Sze, Simon M.; Tseng, Tseung-Yuen; Chen, Sheng-Chi; Lin, Jian-Yang |
Showing items 141-190 of 238 (5 Page(s) Totally)
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