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Showing items 21-30 of 83 (9 Page(s) Totally)
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| 國立交通大學 |
2014-12-08T15:43:42Z |
Highly reliable chemical-mechanical polishing process for organic low-k methylsilsesquioxane
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Liu, PT; Chang, TC; Huang, MC; Tsai, MS; Sze, SM |
| 國立交通大學 |
2014-12-08T15:43:18Z |
Electron energy level calculations for cylindrical narrow gap semiconductor quantum dot
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Li, YM; Liu, JL; Voskoboynikov, O; Lee, CP; Sze, SM |
| 國立交通大學 |
2014-12-08T15:43:16Z |
Enhancing the resistance of low-k hydrogen silsesquioxane (HSQ) to wet stripper damage
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Chang, TC; Mor, YS; Liu, PT; Tsai, TM; Chen, CW; Mei, YJ; Sze, SM |
| 國立交通大學 |
2014-12-08T15:43:16Z |
The effect of ammonia plasma treatment on low-k methyl-hybrido-silsesquioxane against photoresist stripping damage
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Chang, TC; Mor, YS; Liu, PT; Tsai, TM; Chen, CW; Mei, YJ; Sze, SM |
| 國立交通大學 |
2014-12-08T15:43:16Z |
Improvement of low dielectric constant methylsilsesquioxane by boron implantation treatment
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Chang, TC; Mor, YS; Liu, PT; Tsai, TM; Chen, CW; Sze, SM; Mei, YJ |
| 國立交通大學 |
2014-12-08T15:43:13Z |
Computer simulation of electron energy levels for different shape InAs/GaAs semiconductor quantum dots
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Li, YM; Voskoboynikov, O; Lee, CP; Sze, SM |
| 國立交通大學 |
2014-12-08T15:43:11Z |
Effectiveness of NH3 plasma treatment in preventing wet stripper damage to low-k hydrogen silsesquioxane (HSQ)
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Chang, TC; Mor, YS; Liu, PT; Tsai, TM; Chen, CW; Mei, YJ; Sze, SM |
| 國立交通大學 |
2014-12-08T15:43:08Z |
Electron energy state dependence on the shape and size of semiconductor quantum dots
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Li, YM; Voskoboynikov, O; Lee, CP; Sze, SM; Tretyak, O |
| 國立交通大學 |
2014-12-08T15:43:08Z |
A new parallel adaptive finite volume method for the numerical simulation of semiconductor devices
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Li, YM; Liu, JL; Chao, TS; Sze, SM |
| 國立交通大學 |
2014-12-08T15:42:58Z |
A practical implementation of parallel dynamic load balancing for adaptive computing in VLSI device simulation
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Li, Y; Sze, SM; Chao, TS |
Showing items 21-30 of 83 (9 Page(s) Totally)
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