|
"sze sm"的相關文件
顯示項目 26-35 / 83 (共9頁)
<< < 1 2 3 4 5 6 7 8 9 > >>
每頁顯示[10|25|50]項目
| 國立交通大學 |
2014-12-08T15:43:13Z |
Computer simulation of electron energy levels for different shape InAs/GaAs semiconductor quantum dots
|
Li, YM; Voskoboynikov, O; Lee, CP; Sze, SM |
| 國立交通大學 |
2014-12-08T15:43:11Z |
Effectiveness of NH3 plasma treatment in preventing wet stripper damage to low-k hydrogen silsesquioxane (HSQ)
|
Chang, TC; Mor, YS; Liu, PT; Tsai, TM; Chen, CW; Mei, YJ; Sze, SM |
| 國立交通大學 |
2014-12-08T15:43:08Z |
Electron energy state dependence on the shape and size of semiconductor quantum dots
|
Li, YM; Voskoboynikov, O; Lee, CP; Sze, SM; Tretyak, O |
| 國立交通大學 |
2014-12-08T15:43:08Z |
A new parallel adaptive finite volume method for the numerical simulation of semiconductor devices
|
Li, YM; Liu, JL; Chao, TS; Sze, SM |
| 國立交通大學 |
2014-12-08T15:42:58Z |
A practical implementation of parallel dynamic load balancing for adaptive computing in VLSI device simulation
|
Li, Y; Sze, SM; Chao, TS |
| 國立交通大學 |
2014-12-08T15:42:48Z |
Ambipolar Schottky-barrier TFTs
|
Lin, HC; Yeh, KL; Huang, TY; Huang, RG; Sze, SM |
| 國立交通大學 |
2014-12-08T15:42:46Z |
Effective strategy for porous organosilicate to suppress oxygen ashing damage
|
Liu, PT; Chang, TC; Mor, YS; Chen, CW; Tsai, TM; Chu, CJ; Pan, FM; Sze, SM |
| 國立交通大學 |
2014-12-08T15:42:33Z |
Effect of shape and size on electron transition energies of InAs semiconductor quantum dots
|
Li, YM; Voskoboynikov, O; Lee, CP; Sze, SM; Tretyak, O |
| 國立交通大學 |
2014-12-08T15:42:32Z |
Preventing dielectric damage of low-k organic siloxane by passivation treatment
|
Chang, TC; Mor, YS; Liu, PT; Tsai, TM; Chen, CW; Mei, YJ; Pan, FM; Wu, WF; Sze, SM |
| 國立交通大學 |
2014-12-08T15:42:29Z |
A computational method for energy level spin splitting simulation in InAs/GaAs semiconductor quantum dots
|
Li, YM; Voskoboynikov, O; Lee, CP; Sze, SM; Tretyak, O |
顯示項目 26-35 / 83 (共9頁)
<< < 1 2 3 4 5 6 7 8 9 > >>
每頁顯示[10|25|50]項目
|
