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机构	日期	题名	作者
國立中山大學	2005	Optical and deep-level spectroscopic study on In0.38GaAsNx/GaAs single-quantum-well structures of x ? 3% grown by molecular beam epitaxy	T.S. Lay;E.Y. Lin;C.Y. Chang;K.M. Kong;L.P. Chen;T.Y. Chang;J.S. Wang;G. Lin;J.Y. Chi
國立中山大學	2004	High-Coupling Tapered Hyperbolic Fiber Microlens and Taper Asymmetry Effect	H.M. Yang;S.Y. Huang;C.W. Lee;T.S. Lay;W.H. Cheng
國立中山大學	2004	High nitrogen content InGaAsN/GaAs single quantum well for 1.55 mm applications grown by molecular beam epitaxy	J.S. Wang;A.R. Kovsh;R.S. Hsiao;L.P. Chen;J.F. Chen;T.S. Lay;J.Y. Chi
國立中山大學	2004	Probing the Electronic Structures of III-V-Nitride Semiconductors by X-ray Photoelectron Spectroscopy	T.S. Lay;W.T. Kuo;L.P. Chen;Y.H. Lai;W.H. Hung;J.S. Wang;J.Y. Chi;D.K. Shih;H.H. Lin
國立中山大學	2004	Fiber Grating Laser: a Performance study on Coupling Efficiency of Fiber Microlens and the Bragg Reflectivity	T.S. Lay;H.M. Yang;C.W. Lee;W.H. Cheng
國立中山大學	2004	High Coupling Tapered Hyperbolic Microlens and Taper Asymmetry Effect	H.M. Yang;S.Y. Huang;T.S. Lay;C.W. Lee;W.H. Cheng
國立中山大學	2004	Fiber Grating Laser: A Performance Study on Coupling Efficiency of Fiber Microlens and Bragg Reflectivity	T.S. Lay;H.M. Yang;C.W. Lee;W.H. Cheng
國立東華大學	2003-09	Probing the electronic structure of III-V-Nitride semiconductors by X-ray photoelectron spectroscopy	祁錦雲; Jim-Yong Chi; T. S. Lay; W. T. Kuo; L. P. Chen; Y. H. Lai; W. H. Hung; J. S. Wang; J. Y. Chi; D. K. Shih; H. H. Lin; C. M. Chuang; K. H. Chen
國立中山大學	2003	Rapid post-metallization annealing effects on high-k Y2O3/Si capacitor	T.S. Lay;Y.Y. Liao;W.D. Liu;Y.H. Lai;W.H. Hung;J. Kwo;M. Hong;J.P. Mannaerts
國立中山大學	2003	1.55-mm fiber grating laser utilizing an uncoated tapered hemispherical-end fiber microlens	T.S. Lay;M.H. Chen;H.M. Yang;W.H. Cheng
國立中山大學	2002	1.55-mm non-antireflection-coated fiber grating laser for single-longitudinal mode operation	T.S. Lay;M.H. Chen;H.M. Yang;S.H. Wu;W.H. Cheng
國立中山大學	2002	Electro-modulation spectroscopy and laser performance of an InGaAsP asymmetric multi-quantum-well structure	T.S. Lay;H.P. Fan;H.T. Hsu;T.Y. Chang
國立中山大學	2002	Electrical characteristics of ultrathin Pt/Y2O3/Si capacitor with rapid post-metallization annealing	T.S. Lay;W.D. Liu;J. Kwo;M. Hong;J.P. Mannaerts
國立中山大學	2002	1.55 mm Non-Antireflection-Coated Fiber Grating Lasers for Single-Longitudinal Mode Operation	T.S. Lay;H.M. Chen;H.M. Yang;S.H. Wu;W.H. Cheng
國立中山大學	2001	Energy-band parameters at the GaAs- and GaN-Ga2O3(Gd2O3) interfaces	T.S. Lay;M. Hong;J. Kwo;J.P. Mannaerts;W.H. Hung;D.J. Huang
國立中山大學	2001	C-V and G-V characterization of Ga2O3(Gd2O3)/GaN capacitor with low interface state density	T.S. Lay;W.D. Liu;M. Hong;J. Kwo;J.P. Mannaerts
國立中山大學	2001	Probing the microscopic compositions at Ga2O3(Gd2O3)/GaAs interface by core level photoelectron spectroscopy	T.S. Lay;K.H. Huang;W.H. Hung;M. Hong;J. Kwo;J.P. Mannaerts
國立中山大學	2001	Properties of high k gate dielectrics of Gd2O3 and Y2O3 for Si	J. Kwo;M. Hong;A.R. Kortan;K.L. Queeney;Y.J. Chabal;R.L. Opila;D.A. Muller;S.N.G. Chu;B.J. Sapjeta;T.S. Lay;J.P. Mannaerts;T. Boone;H.W. Krautter;J.J. Krajewski;A.M. Sergent;J.M. Rosamilia
國立中山大學	2000	Properties of Ga2O3(Gd2O3)/GaN metal-insulator-semiconductor diodes	M. Hong;K.A. Anselm;J. Kwo;H.M. Ng;J.N. Baillargeon;A.R. Kortan;J.P. Mannaerts;A.Y. Cho;C.M. Lee;J.I. Chyi;T.S. Lay
國立中山大學	1998	Macroscopic correlation-driven charge transfer between capacitively isolated electron layers	H.C. Manoharan;Y.W. Suen;T.S. Lay;M.B. Santos;M. Shayegan
國立中山大學	1998	Growth of Ga2O3(Gd2O3) using molecular beam epitaxy technique - key to first demonstration of GaAs MOSFETs	M. Hong;F. Ren;W.S. Hobson;J.M. Kuo;J. Kwo;J.P. Mannaerts;J.R. Lothian;M.A. Marcus;C.T. Liu;A.M. Sergent;T.S. Lay;Y.K. Chen
國立中山大學	1998	Quantum Hall effect transitions in a bilayer electron system induced in tilted magnetic fields	T.S. Lay;T. Jungwirth;L. Smrcka;M. Shayegan
國立中山大學	1997	Spontaneous interlayer charge transfer near the magnetic quantum limit	H.C. Manoharan;Y.W. Suen;T.S. Lay;M.B. Santos;M. Shayegan
國立中山大學	1997	Resistance oscillation in wide single quantum wells subjected to in-plane magnetic fields	T. Jungwirth;T.S. Lay;L. Smrcka;M. Shayegan
國立中山大學	1997	Interaction-induced interlayer charge transfer at high magnetic fields	H.C. Manoharan;Y.W. Suen;T.S. Lay;M.B. Santos;M. Shayegan
國立中山大學	1997	One-component to two-component transition of the n = 2/3 fractional quantum Hall effect in a wide quantum well induced by in-plane magnetic field	T.S. Lay;T. Jungwirth;L. Smrcka;M. Shayegan
國立中山大學	1996	Magnetotransport of a low-disorder triple-layer electron system in perpendicular or parallel magnetic fields	T.S. Lay;S.P. Shukla;J. Jo;X. Ying;M. Shayegan
國立中山大學	1996	Correlated bilayer electron states	M. Shayegan;H.C. Manoharan;Y.W. Suen;T.S. Lay;M.B. Santos
國立中山大學	1995	Layer-depopulation- and magnetic-field-induced resistance oscillations in a triple-layer electron system	T.S. Lay;X. Ying;M. Shayegan
國立中山大學	1994	Anomalous temperature dependence of correlated n = 1 quantum Hall effect in bilayer electron systems	T.S. Lay;Y.W. Suen;H.C. Manoharan;X. Ying;M.B. Santos;M. Shayegan
國立中山大學	1993	High-quality two-dimensional electron system confined in an AlAs quantum well	T.S. Lay;J.J. Heremans;Y.W. Suen;M.B. Santos;K. Hirakawa;M. Shayegan;A. Zrenner
國立中山大學	1989	Y-junction and misaligned-stripe diode laser arrays with nonuniform reflective diffraction couplers	T.S. Lay;S.C. Lee;H.H. Lin

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