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Showing items 1-2 of 2 (1 Page(s) Totally) 1 View [10|25|50] records per page
| 國立交通大學 |
2019-08-02T02:15:26Z |
The effect of hydrogen on programmed threshold-voltage distribution in NAND flash memories
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Chiu, Yung-Yueh; Lin, Cheng-Han; Yang, Jhih-Siang; Yang, Bo-Jun; Aoki, Minoru; Takeshita, Toshiaki; Yano, Masaru; Shirota, Riichiro |
| 國立交通大學 |
2019-04-02T05:58:58Z |
Transconductance Distribution in Program/Erase Cycling of NAND Flash Memory Devices: a Statistical Investigation
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Chiu, Yung-Yueh; Lin, I-Chun; Chang, Kai-Chieh; Yang, Bo-Jun; Takeshita, Toshiaki; Yano, Masaru; Shirota, Riichiro |
Showing items 1-2 of 2 (1 Page(s) Totally) 1 View [10|25|50] records per page
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