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"tseng hc"的相关文件
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| 國立交通大學 |
2014-12-08T15:19:04Z |
Extraction of substrate parameters for RF MOSFETs based on four-port measurement
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Wu, SD; Huang, GW; Chen, KM; Chang, CY; Tseng, HC; Hsu, TL |
| 國立交通大學 |
2014-12-08T15:18:55Z |
Hot-carrier induced degradations on RF power characteristics of SiGe heterojunction bipolar transistors
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Huang, SY; Chen, KM; Huang, GW; Liang, V; Tseng, HC; Hsu, TL; Chang, CY |
| 國立交通大學 |
2014-12-08T15:18:48Z |
Linearity and power characteristics of SiGeHBTs at high temperatures for RF applications
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Chen, KM; Peng, AS; Huang, GW; Chen, HY; Huang, SY; Chang, CY; Tseng, HC; Hsu, TL; Liang, V |
| 國立交通大學 |
2014-12-08T15:18:00Z |
Improvement in light-output efficiency of AlGaInP LEDs fabricated on stripe patterned epitaxy
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Lee, YJ; Tseng, HC; Kuo, HC; Wang, SC; Chang, CW; Hsu, TC; Yang, YL; Hsieh, MH; Jou, MJ; Lee, BJ |
| 國立交通大學 |
2014-12-08T15:03:42Z |
SOME EXACT RESULTS FOR THE DIFFUSION-COEFFICIENTS OF MAPS WITH PRUNING CYCLES
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TSENG, HC; CHEN, HJ; LI, PC; LAI, WY; CHOU, CH; CHEN, HW |
| 國立交通大學 |
2014-12-08T15:03:15Z |
EPITAXY OF SI1-XGEX BY ULTRAHIGH-VACUUM CHEMICAL-VAPOR-DEPOSITION USING SI2H6 AND GEH4
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CHEN, LP; CHOU, TC; TSAI, WC; HUANG, GW; TSENG, HC; LIN, HC; CHANG, CY |
| 國立交通大學 |
2014-12-08T15:03:08Z |
EFFECTS OF DRY-ETCHING DAMAGE REMOVAL ON LOW-TEMPERATURE SILICON SELECTIVE EPITAXIAL-GROWTH
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TSENG, HC; CHANG, CY; PAN, FM; CHEN, LP |
| 國立交通大學 |
2014-12-08T15:02:16Z |
Low-temperature and low thermal budget fabrication of polycrystalline silicon thin-film transistors
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Lin, HY; Chang, CY; Lei, TF; Liu, FM; Yang, WL; Cheng, JY; Tseng, HC; Chen, LP |
| 國立交通大學 |
2014-12-08T15:02:14Z |
Characterization of boron silicide layer deposited by ultrahigh-vacuum chemical-vapor deposition
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Tseng, HC; Pan, FM; Chang, CY |
| 國立交通大學 |
2014-12-08T15:02:05Z |
Low temperature epitaxy of Si and Si1-xGex by utrahigh vacuum-chemical molecular epitaxy
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Huang, GW; Chen, LP; Chou, CT; Chen, KM; Tseng, HC; Tasi, WC; Chang, CY |
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