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| 國立交通大學 |
2014-12-08T15:03:15Z |
EPITAXY OF SI1-XGEX BY ULTRAHIGH-VACUUM CHEMICAL-VAPOR-DEPOSITION USING SI2H6 AND GEH4
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CHEN, LP; CHOU, TC; TSAI, WC; HUANG, GW; TSENG, HC; LIN, HC; CHANG, CY |
| 國立交通大學 |
2014-12-08T15:03:08Z |
EFFECTS OF DRY-ETCHING DAMAGE REMOVAL ON LOW-TEMPERATURE SILICON SELECTIVE EPITAXIAL-GROWTH
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TSENG, HC; CHANG, CY; PAN, FM; CHEN, LP |
| 國立交通大學 |
2014-12-08T15:02:16Z |
Low-temperature and low thermal budget fabrication of polycrystalline silicon thin-film transistors
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Lin, HY; Chang, CY; Lei, TF; Liu, FM; Yang, WL; Cheng, JY; Tseng, HC; Chen, LP |
| 國立交通大學 |
2014-12-08T15:02:14Z |
Characterization of boron silicide layer deposited by ultrahigh-vacuum chemical-vapor deposition
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Tseng, HC; Pan, FM; Chang, CY |
| 國立交通大學 |
2014-12-08T15:02:05Z |
Low temperature epitaxy of Si and Si1-xGex by utrahigh vacuum-chemical molecular epitaxy
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Huang, GW; Chen, LP; Chou, CT; Chen, KM; Tseng, HC; Tasi, WC; Chang, CY |
| 國立交通大學 |
2014-12-08T15:01:45Z |
Effects of isolation oxides on undercut formation and electrical characteristics for silicon selective epitaxial growth
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Tseng, HC; Chang, CY; Pan, FM; Chen, LP |
| 國立交通大學 |
2014-12-08T15:01:41Z |
The role of a resist during O-2 plasma ashing and its impact on the reliability evaluation of ultrathin gate oxides
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Chien, CH; Chang, CY; Lin, HC; Chang, TF; Hsien, SK; Tseng, HC; Chiou, SG; Huang, TY |
| 國立交通大學 |
2014-12-08T15:01:23Z |
Effects of isolation materials on facet formation for silicon selective epitaxial growth
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Tseng, HC; Chang, CY; Pan, FM; Chen, JR; Chen, LJ |
| 國家衛生研究院 |
2014-09 |
The succinate-GPR91 axis is involved in the regulation of mast cell response
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Chang, HW;Kawasaki, H;Tseng, HC;Hsu, SC;Yang, SJ;Huang, SK |
| 國家衛生研究院 |
2014-04 |
A tryptophan metabolite, kynurenine, promotes mast cell activation through aryl hydrocarbon receptor
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Kawasaki, H;Chang, HW;Tseng, HC;Hsu, SC;Yang, SJ;Hung, CH;Zhou, Y;Huang, SK |
Showing items 26-35 of 56 (6 Page(s) Totally)
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