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Showing items 51-60 of 81  (9 Page(s) Totally)
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Institution Date Title Author
臺大學術典藏 2020 Optimization of Negative-Capacitance Vertical-Tunnel FET(NCVT-FET) VITA PI-HO HU; 胡璧合; C. Hu; V. P.-H. Hu;H.-H. Lin;Y.-K. Lin;C. Hu; V. P.-H. Hu; H.-H. Lin; Y.-K. Lin; C. Hu; VITA PI-HO HU; V. P.-H. Hu; H.-H. Lin; Y.-K. Lin
臺大學術典藏 2020 Negative Capacitance Junctionless Device With Mid-Gap Work Function for Low Power Applications M. Gupta;V. P.-H. Hu;VITA PI-HO H; M. Gupta; V. P.-H. Hu; VITA PI-HO HU; M. Gupta; V. P.-H. Hu; 胡璧合; VITA PI-HO HU
臺大學術典藏 2020 Negative Capacitance Junctionless Device With Mid-Gap Work Function for Low Power Applications M. Gupta;V. P.-H. Hu;VITA PI-HO H; M. Gupta; V. P.-H. Hu; VITA PI-HO HU; M. Gupta; V. P.-H. Hu; 胡璧合; VITA PI-HO HU
臺大學術典藏 2020 Negative Capacitance Junctionless Device With Mid-Gap Work Function for Low Power Applications M. Gupta;V. P.-H. Hu;VITA PI-HO H; M. Gupta; V. P.-H. Hu; VITA PI-HO HU; M. Gupta; V. P.-H. Hu; 胡璧合; VITA PI-HO HU
臺大學術典藏 2018 Analysis of switching characteristics for negative capacitance ultra-thin-body germanium-on-insulator MOSFETs V. P.-H. Hu; P.-C. Chiu; 胡璧合; VITA PI-HO HU; VITA PI-HO HU; V. P.-H. Hu; P.-C. Chiu
臺大學術典藏 2018 Analysis of switching characteristics for negative capacitance ultra-thin-body germanium-on-insulator MOSFETs V. P.-H. Hu; P.-C. Chiu; 胡璧合; VITA PI-HO HU; VITA PI-HO HU; V. P.-H. Hu; P.-C. Chiu
臺大學術典藏 2017 Reliability-Tolerant Design for Ultra-Thin-Body GeOI 6T SRAM Cell and Sense Amplifier VITA PI-HO HU; V. P.-H. Hu; VITA PI-HO HU; V. P.-H. Hu; 胡璧合; VITA PI-HO HU
臺大學術典藏 2017 Reliability-Tolerant Design for Ultra-Thin-Body GeOI 6T SRAM Cell and Sense Amplifier VITA PI-HO HU; V. P.-H. Hu; VITA PI-HO HU; V. P.-H. Hu; 胡璧合; VITA PI-HO HU
臺大學術典藏 2015 Analysis of GeOI FinFET 6T SRAM Cells With Variation-Tolerant WLUD Read-Assist and TVC Write-Assist M.-L. Fan; V. P.-H. Hu; V. P.-H. Hu;M.-L. Fan;P. Su;C.-T. Chuang;; P. Su; C.-T. Chuang; VITA PI-HO HU; V. P.-H. Hu; M.-L. Fan; P. Su; C.-T. Chuang; 胡璧合; VITA PI-HO HU
臺大學術典藏 2015 Analysis of GeOI FinFET 6T SRAM Cells With Variation-Tolerant WLUD Read-Assist and TVC Write-Assist M.-L. Fan; V. P.-H. Hu; V. P.-H. Hu;M.-L. Fan;P. Su;C.-T. Chuang;; P. Su; C.-T. Chuang; VITA PI-HO HU; V. P.-H. Hu; M.-L. Fan; P. Su; C.-T. Chuang; 胡璧合; VITA PI-HO HU

Showing items 51-60 of 81  (9 Page(s) Totally)
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View [10|25|50] records per page