| 臺大學術典藏 |
2021-05-05T03:31:09Z |
Energy-Efficient Monolithic 3-D SRAM Cell with BEOL MoS2FETs for SoC Scaling
|
Hu, V.P.-H.; Su, C.-W.; Lee, Y.-W.; Ho, T.-Y.; Cheng, C.-C.; Chen, T.-C.; Hung, T.Y.-T.; Li, J.-F.; Chen, Y.-G.; Li, L.-J.; VITA PI-HO HU |
| 臺大學術典藏 |
2020-10-07T01:23:20Z |
Static Noise Margin of Ultrathin-Body SOI Subthreshold SRAM Cells—An Assessment Based on Analytical Solutions of Poisson's Equation
|
Y.-S. Wu; V. P.-H. Hu; V. P.-H. Hu;Y.-S. Wu;M.-L. Fan;P. Su;C.-T. Chuang; M.-L. Fan; P. Su; C.-T. Chuang; VITA PI-HO HU; V. P.-H. Hu; Y.-S. Wu; M.-L. Fan; P. Su; C.-T. Chuang; 胡璧合; VITA PI-HO HU |
| 臺大學術典藏 |
2020-10-07T01:23:20Z |
Static Noise Margin of Ultrathin-Body SOI Subthreshold SRAM Cells—An Assessment Based on Analytical Solutions of Poisson's Equation
|
Y.-S. Wu; V. P.-H. Hu; V. P.-H. Hu;Y.-S. Wu;M.-L. Fan;P. Su;C.-T. Chuang; M.-L. Fan; P. Su; C.-T. Chuang; VITA PI-HO HU; V. P.-H. Hu; Y.-S. Wu; M.-L. Fan; P. Su; C.-T. Chuang; 胡璧合; VITA PI-HO HU |
| 臺大學術典藏 |
2020-10-07T01:23:19Z |
Analysis of Ultra-Thin-Body SOI Subthreshold SRAM Considering Line-Edge Roughness, Work Function Variation, and Temperature Sensitivity
|
P. Su; C.-T. Chuang; VITA PI-HO HU; V. P.-H. Hu; M.-L. Fan; P. Su; C.-T. Chuang; 胡璧合; VITA PI-HO HU; M.-L. Fan; V. P.-H. Hu;M.-L. Fan;P. Su;C.-T. Chuang; V. P.-H. Hu |
| 臺大學術典藏 |
2020-10-07T01:23:19Z |
Analysis of Ultra-Thin-Body SOI Subthreshold SRAM Considering Line-Edge Roughness, Work Function Variation, and Temperature Sensitivity
|
P. Su; C.-T. Chuang; VITA PI-HO HU; V. P.-H. Hu; M.-L. Fan; P. Su; C.-T. Chuang; 胡璧合; VITA PI-HO HU; M.-L. Fan; V. P.-H. Hu;M.-L. Fan;P. Su;C.-T. Chuang; V. P.-H. Hu |
| 臺大學術典藏 |
2020-10-07T01:23:18Z |
Impact of Quantum Confinement on Backgate-Bias Modulated Threshold-Voltage and Subthreshold Characteristics for Ultra-Thin-Body GeOI MOSFETs
|
C.-H. Yu; Y.-S. Wu; V. P.-H. Hu; P. Su; VITA PI-HO HU; C.-H. Yu; Y.-S. Wu; V. P.-H. Hu; P. Su; 胡璧合; VITA PI-HO HU |
| 臺大學術典藏 |
2020-10-07T01:23:18Z |
Impact of Quantum Confinement on Backgate-Bias Modulated Threshold-Voltage and Subthreshold Characteristics for Ultra-Thin-Body GeOI MOSFETs
|
C.-H. Yu; Y.-S. Wu; V. P.-H. Hu; P. Su; VITA PI-HO HU; C.-H. Yu; Y.-S. Wu; V. P.-H. Hu; P. Su; 胡璧合; VITA PI-HO HU |
| 臺大學術典藏 |
2020-10-07T01:23:18Z |
Band-to-Band-Tunneling Leakage Suppression for Ultra-Thin-Body GeOI MOSFETs Using Transistor Stacking
|
VITA PI-HO HU; 胡璧合; C.-T. Chuang; P. Su; M.-L. Fan; V. P.-H. Hu; VITA PI-HO HU; V. P.-H. Hu; M.-L. Fan; P. Su; C.-T. Chuang |
| 臺大學術典藏 |
2020-10-07T01:23:18Z |
Band-to-Band-Tunneling Leakage Suppression for Ultra-Thin-Body GeOI MOSFETs Using Transistor Stacking
|
VITA PI-HO HU; 胡璧合; C.-T. Chuang; P. Su; M.-L. Fan; V. P.-H. Hu; VITA PI-HO HU; V. P.-H. Hu; M.-L. Fan; P. Su; C.-T. Chuang |
| 臺大學術典藏 |
2020-10-07T01:23:18Z |
Impact of Quantum Confinement on Subthreshold Swing and Electrostatic Integrity of Ultra-Thin-Body GeOI and InGaAs-OI n-MOSFETs
|
Y.-S. Wu; C.-H. Yu; V. P.-H. Hu; P. Su; VITA PI-HO HU; C.-H. Yu; Y.-S. Wu; V. P.-H. Hu; P. Su; 胡璧合; VITA PI-HO HU |
| 臺大學術典藏 |
2020-10-07T01:23:18Z |
Impact of Quantum Confinement on Subthreshold Swing and Electrostatic Integrity of Ultra-Thin-Body GeOI and InGaAs-OI n-MOSFETs
|
Y.-S. Wu; C.-H. Yu; V. P.-H. Hu; P. Su; VITA PI-HO HU; C.-H. Yu; Y.-S. Wu; V. P.-H. Hu; P. Su; 胡璧合; VITA PI-HO HU |
| 臺大學術典藏 |
2020-10-07T01:23:17Z |
Analysis of Single-Trap-Induced Random Telegraph Noise on FinFET Devices, 6T SRAM Cell, and Logic Circuits
|
VITA PI-HO HU; 胡璧合; C.-T. Chuang; P. Su; Y.-N. Chen; V. P.-H. Hu; M.-L. Fan; VITA PI-HO HU; C.-T. Chuang; Y.-N. Chen; P. Su; V. P.-H. Hu; M.-L. Fan |
| 臺大學術典藏 |
2020-10-07T01:23:17Z |
Analysis of Single-Trap-Induced Random Telegraph Noise on FinFET Devices, 6T SRAM Cell, and Logic Circuits
|
VITA PI-HO HU; 胡璧合; C.-T. Chuang; P. Su; Y.-N. Chen; V. P.-H. Hu; M.-L. Fan; VITA PI-HO HU; C.-T. Chuang; Y.-N. Chen; P. Su; V. P.-H. Hu; M.-L. Fan |
| 臺大學術典藏 |
2020-10-07T01:23:17Z |
Variability Analysis of Sense Amplifier for FinFET Subthreshold SRAM Applications
|
胡璧合; VITA PI-HO HU; C.-T. Chuang; P. Su; Y.-N. Chen; V. P.-H. Hu; M.-L. Fan; VITA PI-HO HU; P. Su; C.-T. Chuang; Y.-N. Chen; V. P.-H. Hu; M.-L. Fan |
| 臺大學術典藏 |
2020-10-07T01:23:17Z |
Variability Analysis of Sense Amplifier for FinFET Subthreshold SRAM Applications
|
胡璧合; VITA PI-HO HU; C.-T. Chuang; P. Su; Y.-N. Chen; V. P.-H. Hu; M.-L. Fan; VITA PI-HO HU; P. Su; C.-T. Chuang; Y.-N. Chen; V. P.-H. Hu; M.-L. Fan |
| 臺大學術典藏 |
2020-10-07T01:23:16Z |
Threshold Voltage Design of UTB SOI SRAM With Improved Stability/Variability for Ultralow Voltage Near Subthreshold Operation
|
VITA PI-HO HU; C.-T. Chuang; P. Su; M.-L. Fan; V. P.-H. Hu; V. P.-H. Hu;M.-L. Fan;P. Su;C.-T. Chuang; V. P.-H. Hu; M.-L. Fan; P. Su; C.-T. Chuang; 胡璧合; VITA PI-HO HU |
| 臺大學術典藏 |
2020-10-07T01:23:16Z |
Threshold Voltage Design of UTB SOI SRAM With Improved Stability/Variability for Ultralow Voltage Near Subthreshold Operation
|
VITA PI-HO HU; C.-T. Chuang; P. Su; M.-L. Fan; V. P.-H. Hu; V. P.-H. Hu;M.-L. Fan;P. Su;C.-T. Chuang; V. P.-H. Hu; M.-L. Fan; P. Su; C.-T. Chuang; 胡璧合; VITA PI-HO HU |
| 臺大學術典藏 |
2020-10-07T01:23:16Z |
Analysis of Single-Trap-Induced Random Telegraph Noise and its Interaction With Work Function Variation for Tunnel FET
|
M.-L. Fan; VITA PI-HO HU; C.-T. Chuang; P. Su; Y.-N. Chen; M.-L. Fan;V. P.-H. Hu;Y.-N. Chen;P. Su;C.-T. Chuang; M.-L. Fan; V. P.-H. Hu; V. P.-H. Hu; Y.-N. Chen; P. Su; C.-T. Chuang; 胡璧合; VITA PI-HO HU |
| 臺大學術典藏 |
2020-10-07T01:23:16Z |
Analysis of Single-Trap-Induced Random Telegraph Noise and its Interaction With Work Function Variation for Tunnel FET
|
M.-L. Fan; VITA PI-HO HU; C.-T. Chuang; P. Su; Y.-N. Chen; M.-L. Fan;V. P.-H. Hu;Y.-N. Chen;P. Su;C.-T. Chuang; M.-L. Fan; V. P.-H. Hu; V. P.-H. Hu; Y.-N. Chen; P. Su; C.-T. Chuang; 胡璧合; VITA PI-HO HU |
| 臺大學術典藏 |
2020-10-07T01:23:16Z |
Design and Analysis of Robust Tunneling FET SRAM
|
C.-T. Chuang; V. P.-H. Hu; P. Su; Y.-N. Chen; M.-L. Fan; Y.-N. Chen;M.-L. Fan;V. P.-H. Hu;P. Su;C.-T. Chuang; Y.-N. Chen; M.-L. Fan; V. P.-H. Hu; P. Su; C.-T. Chuang; VITA PI-HO HU; 胡璧合; VITA PI-HO HU |
| 臺大學術典藏 |
2020-10-07T01:23:16Z |
Design and Analysis of Robust Tunneling FET SRAM
|
C.-T. Chuang; V. P.-H. Hu; P. Su; Y.-N. Chen; M.-L. Fan; Y.-N. Chen;M.-L. Fan;V. P.-H. Hu;P. Su;C.-T. Chuang; Y.-N. Chen; M.-L. Fan; V. P.-H. Hu; P. Su; C.-T. Chuang; VITA PI-HO HU; 胡璧合; VITA PI-HO HU |
| 臺大學術典藏 |
2020-10-07T01:23:15Z |
Evaluation of Sub-0.2 V High-Speed Low-Power Circuits Using Hetero-Channel MOSFET and Tunneling FET Devices
|
VITA PI-HO HU; 胡璧合; C.-T. Chuang; Pin Su; V. P.-H. Hu; M.-L. Fan; Y.-N. Chen; VITA PI-HO HU; Pin Su; C.-T. Chuang; Y.-N. Chen;M.-L. Fan;V. P.-H. Hu;Pin Su;C.-T. Chuang; Y.-N. Chen; M.-L. Fan; V. P.-H. Hu |
| 臺大學術典藏 |
2020-10-07T01:23:15Z |
Evaluation of Sub-0.2 V High-Speed Low-Power Circuits Using Hetero-Channel MOSFET and Tunneling FET Devices
|
VITA PI-HO HU; 胡璧合; C.-T. Chuang; Pin Su; V. P.-H. Hu; M.-L. Fan; Y.-N. Chen; VITA PI-HO HU; Pin Su; C.-T. Chuang; Y.-N. Chen;M.-L. Fan;V. P.-H. Hu;Pin Su;C.-T. Chuang; Y.-N. Chen; M.-L. Fan; V. P.-H. Hu |
| 臺大學術典藏 |
2020-10-07T01:23:15Z |
Stability and Performance Optimization of Heterochannel Monolithic 3-D SRAM Cells Considering Interlayer Coupling
|
胡璧合; VITA PI-HO HU; C.-T. Chuang; M.-L. Fan;V. P.-H. Hu;Y.-N. Chen;P. Su;C.-T. Chuang; M.-L. Fan; V. P.-H. Hu; Y.-N. Chen; P. Su; C.-T. Chuang; VITA PI-HO HU; M.-L. Fan; V. P.-H. Hu; Y.-N. Chen; P. Su |
| 臺大學術典藏 |
2020-10-07T01:23:15Z |
Stability and Performance Optimization of Heterochannel Monolithic 3-D SRAM Cells Considering Interlayer Coupling
|
胡璧合; VITA PI-HO HU; C.-T. Chuang; M.-L. Fan;V. P.-H. Hu;Y.-N. Chen;P. Su;C.-T. Chuang; M.-L. Fan; V. P.-H. Hu; Y.-N. Chen; P. Su; C.-T. Chuang; VITA PI-HO HU; M.-L. Fan; V. P.-H. Hu; Y.-N. Chen; P. Su |
| 臺大學術典藏 |
2020-10-07T01:23:15Z |
Single-trap-induced random telegraph noise for FinFET, Si/Ge Nanowire FET, Tunnel FET, SRAM and logic circuits
|
C.-T. Chuang; Y.-N. Chen; P. Su; V. P.-H. Hu; S.-Y. Yang; M.-L. Fan;S.-Y. Yang;V. P.-H. Hu;Y.-N. Chen;P. Su;C.-T. Chuang; M.-L. Fan; S.-Y. Yang; V. P.-H. Hu; Y.-N. Chen; P. Su; C.-T. Chuang; VITA PI-HO HU; M.-L. Fan; 胡璧合; VITA PI-HO HU |
| 臺大學術典藏 |
2020-10-07T01:23:15Z |
Single-trap-induced random telegraph noise for FinFET, Si/Ge Nanowire FET, Tunnel FET, SRAM and logic circuits
|
C.-T. Chuang; Y.-N. Chen; P. Su; V. P.-H. Hu; S.-Y. Yang; M.-L. Fan;S.-Y. Yang;V. P.-H. Hu;Y.-N. Chen;P. Su;C.-T. Chuang; M.-L. Fan; S.-Y. Yang; V. P.-H. Hu; Y.-N. Chen; P. Su; C.-T. Chuang; VITA PI-HO HU; M.-L. Fan; 胡璧合; VITA PI-HO HU |
| 臺大學術典藏 |
2020-10-07T01:23:14Z |
Investigation and Simulation of Work-Function Variation for III-V Broken-Gap Heterojunction Tunnel FET
|
VITA PI-HO HU; 胡璧合; Pin Su; V. P.-H. Hu; M.-L. Fan; C.-W. Hsu; VITA PI-HO HU; Pin Su; V. P.-H. Hu; C.-W. Hsu; M.-L. Fan; C.-W. Hsu;M.-L. Fan;V. P.-H. Hu;Pin Su |
| 臺大學術典藏 |
2020-10-07T01:23:14Z |
Investigation and Simulation of Work-Function Variation for III-V Broken-Gap Heterojunction Tunnel FET
|
VITA PI-HO HU; 胡璧合; Pin Su; V. P.-H. Hu; M.-L. Fan; C.-W. Hsu; VITA PI-HO HU; Pin Su; V. P.-H. Hu; C.-W. Hsu; M.-L. Fan; C.-W. Hsu;M.-L. Fan;V. P.-H. Hu;Pin Su |
| 臺大學術典藏 |
2020-10-07T01:23:14Z |
Impacts of Work Function Variation and Line-Edge Roughness on TFET and FinFET Devices and 32-Bit CLA Circuits
|
VITA PI-HO HU; 胡璧合; C.-T. Chuang; Pin Su; V. P.-H. Hu; M.-L. Fan; C.-J. Chen; Y.-N. Chen; VITA PI-HO HU; C.-T. Chuang; Pin Su; V. P.-H. Hu; M.-L. Fan; C.-J. Chen; Y.-N. Chen; Y.-N. Chen;C.-J. Chen;M.-L. Fan;V. P.-H. Hu;Pin Su;C.-T. Chuang |
| 臺大學術典藏 |
2020-10-07T01:23:14Z |
Impacts of Work Function Variation and Line-Edge Roughness on TFET and FinFET Devices and 32-Bit CLA Circuits
|
VITA PI-HO HU; 胡璧合; C.-T. Chuang; Pin Su; V. P.-H. Hu; M.-L. Fan; C.-J. Chen; Y.-N. Chen; VITA PI-HO HU; C.-T. Chuang; Pin Su; V. P.-H. Hu; M.-L. Fan; C.-J. Chen; Y.-N. Chen; Y.-N. Chen;C.-J. Chen;M.-L. Fan;V. P.-H. Hu;Pin Su;C.-T. Chuang |
| 臺大學術典藏 |
2020-10-07T01:23:13Z |
Evaluation of Monolayer and Bilayer 2-D Transition Metal Dichalcogenide Devices for SRAM Applications
|
VITA PI-HO HU; C.-H. Yu; M.-L. Fan; K.-C. Yu; V. P.-H. Hu; Pin Su; C.-T. Chuang; Vita Pi-Ho Hu; C.-H. Yu; M.-L. Fan; K.-C. Yu; V. P.-H. Hu; Pin Su; C.-T. Chuang; VITA PI-HO HU; C.-H. Yu; M.-L. Fan; K.-C. Yu; V. P.-H. Hu; Pin Su; C.-T. Chuang; 胡璧合 |
| 臺大學術典藏 |
2020-10-07T01:23:13Z |
Evaluation of Monolayer and Bilayer 2-D Transition Metal Dichalcogenide Devices for SRAM Applications
|
VITA PI-HO HU; C.-H. Yu; M.-L. Fan; K.-C. Yu; V. P.-H. Hu; Pin Su; C.-T. Chuang; Vita Pi-Ho Hu; C.-H. Yu; M.-L. Fan; K.-C. Yu; V. P.-H. Hu; Pin Su; C.-T. Chuang; VITA PI-HO HU; C.-H. Yu; M.-L. Fan; K.-C. Yu; V. P.-H. Hu; Pin Su; C.-T. Chuang; 胡璧合 |
| 臺大學術典藏 |
2020-10-07T01:23:13Z |
Evaluation of Monolayer and Bilayer 2-D Transition Metal Dichalcogenide Devices for SRAM Applications
|
VITA PI-HO HU; C.-H. Yu; M.-L. Fan; K.-C. Yu; V. P.-H. Hu; Pin Su; C.-T. Chuang; Vita Pi-Ho Hu; C.-H. Yu; M.-L. Fan; K.-C. Yu; V. P.-H. Hu; Pin Su; C.-T. Chuang; VITA PI-HO HU; C.-H. Yu; M.-L. Fan; K.-C. Yu; V. P.-H. Hu; Pin Su; C.-T. Chuang; 胡璧合 |
| 臺大學術典藏 |
2020-10-07T01:23:12Z |
Optimization of III-V heterojunction tunnel FET with non-uniform channel thickness for performance enhancement and ambipolar leakage suppression
|
VITA PI-HO HU; 胡璧合; C.-T. Wang; V. P.-H. Hu; VITA PI-HO HU; C.-T. Wang; V. P.-H. Hu |
| 臺大學術典藏 |
2020-10-07T01:23:12Z |
Optimization of III-V heterojunction tunnel FET with non-uniform channel thickness for performance enhancement and ambipolar leakage suppression
|
VITA PI-HO HU; 胡璧合; C.-T. Wang; V. P.-H. Hu; VITA PI-HO HU; C.-T. Wang; V. P.-H. Hu |
| 臺大學術典藏 |
2020-10-07T01:23:11Z |
Impact of Work Function Variation, Line-Edge Roughness, and Ferroelectric Properties Variation on Negative Capacitance FETs
|
V. P.-H. Hu;P.-C. Chiu;Y.-C. Lu; V. P.-H. Hu; P.-C. Chiu; Y.-C. Lu; VITA PI-HO HU; V. P.-H. Hu; P.-C. Chiu; Y.-C. Lu; 胡璧合; VITA PI-HO HU |
| 臺大學術典藏 |
2020-10-07T01:23:11Z |
Impact of Work Function Variation, Line-Edge Roughness, and Ferroelectric Properties Variation on Negative Capacitance FETs
|
V. P.-H. Hu;P.-C. Chiu;Y.-C. Lu; V. P.-H. Hu; P.-C. Chiu; Y.-C. Lu; VITA PI-HO HU; V. P.-H. Hu; P.-C. Chiu; Y.-C. Lu; 胡璧合; VITA PI-HO HU |
| 臺大學術典藏 |
2020 |
Optimization of Negative-Capacitance Vertical-Tunnel FET(NCVT-FET)
|
VITA PI-HO HU; 胡璧合; C. Hu; V. P.-H. Hu;H.-H. Lin;Y.-K. Lin;C. Hu; V. P.-H. Hu; H.-H. Lin; Y.-K. Lin; C. Hu; VITA PI-HO HU; V. P.-H. Hu; H.-H. Lin; Y.-K. Lin |
| 臺大學術典藏 |
2020 |
Optimization of Negative-Capacitance Vertical-Tunnel FET(NCVT-FET)
|
VITA PI-HO HU; 胡璧合; C. Hu; V. P.-H. Hu;H.-H. Lin;Y.-K. Lin;C. Hu; V. P.-H. Hu; H.-H. Lin; Y.-K. Lin; C. Hu; VITA PI-HO HU; V. P.-H. Hu; H.-H. Lin; Y.-K. Lin |
| 臺大學術典藏 |
2020 |
Negative Capacitance Junctionless Device With Mid-Gap Work Function for Low Power Applications
|
M. Gupta;V. P.-H. Hu;VITA PI-HO H; M. Gupta; V. P.-H. Hu; VITA PI-HO HU; M. Gupta; V. P.-H. Hu; 胡璧合; VITA PI-HO HU |
| 臺大學術典藏 |
2020 |
Negative Capacitance Junctionless Device With Mid-Gap Work Function for Low Power Applications
|
M. Gupta;V. P.-H. Hu;VITA PI-HO H; M. Gupta; V. P.-H. Hu; VITA PI-HO HU; M. Gupta; V. P.-H. Hu; 胡璧合; VITA PI-HO HU |
| 臺大學術典藏 |
2018 |
Analysis of switching characteristics for negative capacitance ultra-thin-body germanium-on-insulator MOSFETs
|
V. P.-H. Hu; P.-C. Chiu; 胡璧合; VITA PI-HO HU; VITA PI-HO HU; V. P.-H. Hu; P.-C. Chiu |
| 臺大學術典藏 |
2018 |
Analysis of switching characteristics for negative capacitance ultra-thin-body germanium-on-insulator MOSFETs
|
V. P.-H. Hu; P.-C. Chiu; 胡璧合; VITA PI-HO HU; VITA PI-HO HU; V. P.-H. Hu; P.-C. Chiu |
| 臺大學術典藏 |
2017 |
Reliability-Tolerant Design for Ultra-Thin-Body GeOI 6T SRAM Cell and Sense Amplifier
|
VITA PI-HO HU; V. P.-H. Hu; VITA PI-HO HU; V. P.-H. Hu; 胡璧合; VITA PI-HO HU |
| 臺大學術典藏 |
2017 |
Reliability-Tolerant Design for Ultra-Thin-Body GeOI 6T SRAM Cell and Sense Amplifier
|
VITA PI-HO HU; V. P.-H. Hu; VITA PI-HO HU; V. P.-H. Hu; 胡璧合; VITA PI-HO HU |
| 臺大學術典藏 |
2017 |
Reliability-Tolerant Design for Ultra-Thin-Body GeOI 6T SRAM Cell and Sense Amplifier
|
VITA PI-HO HU; V. P.-H. Hu; VITA PI-HO HU; V. P.-H. Hu; 胡璧合; VITA PI-HO HU |
| 臺大學術典藏 |
2015 |
Analysis of GeOI FinFET 6T SRAM Cells With Variation-Tolerant WLUD Read-Assist and TVC Write-Assist
|
M.-L. Fan; V. P.-H. Hu; V. P.-H. Hu;M.-L. Fan;P. Su;C.-T. Chuang;; P. Su; C.-T. Chuang; VITA PI-HO HU; V. P.-H. Hu; M.-L. Fan; P. Su; C.-T. Chuang; 胡璧合; VITA PI-HO HU |
| 臺大學術典藏 |
2015 |
Analysis of GeOI FinFET 6T SRAM Cells With Variation-Tolerant WLUD Read-Assist and TVC Write-Assist
|
M.-L. Fan; V. P.-H. Hu; V. P.-H. Hu;M.-L. Fan;P. Su;C.-T. Chuang;; P. Su; C.-T. Chuang; VITA PI-HO HU; V. P.-H. Hu; M.-L. Fan; P. Su; C.-T. Chuang; 胡璧合; VITA PI-HO HU |
| 臺大學術典藏 |
2015 |
Investigation of Backgate-Biasing Effect for Ultrathin-Body III-V Heterojunction Tunnel FET
|
C.-W. Hsu; Pin Su; C.-T. Chuang; 胡璧合; VITA PI-HO HU; Y.-N. Chen; V. P.-H. Hu; M.-L. Fan; Pin Su; C.-T. Chuang; VITA PI-HO HU; C.-W. Hsu; Y.-N. Chen; V. P.-H. Hu; M.-L. Fan; M.-L. Fan;V. P.-H. Hu;Y.-N. Chen;C.-W. Hsu;Pin Su;C.-T. Chuang |
