|
English
|
正體中文
|
简体中文
|
Total items :0
|
|
Visitors :
52477415
Online Users :
1163
Project Commissioned by the Ministry of Education
Project Executed by National Taiwan University Library
|
|
|
|
Taiwan Academic Institutional Repository >
Browse by Author
|
"wagner s"
Showing items 31-40 of 49 (5 Page(s) Totally)
<< < 1 2 3 4 5 > >>
View [10|25|50] records per page
| 臺大學術典藏 |
2018-09-10T04:32:47Z |
Thin film transistors made of nanocrystalline silicon for CMOS on plastic
|
Cheng, I.-C.; Wagner, S.; I-CHUN CHENG |
| 臺大學術典藏 |
2018-09-10T04:32:47Z |
Silicon for thin-film transistors
|
Wagner, S.; Gleskova, H.; Cheng, I.-C.; Wu, M.; I-CHUN CHENG |
| 臺大學術典藏 |
2018-09-10T04:32:47Z |
Nanocrystalline silicon thin film transistors
|
Cheng, I.-C.; Wagner, S.; I-CHUN CHENG |
| 臺大學術典藏 |
2018-09-10T04:32:47Z |
High hole and electron field effect mobilities in nanocrystalline silicon deposited at 150 °C
|
Cheng, I.-C.; Wagner, S.; I-CHUN CHENG |
| 臺大學術典藏 |
2018-09-10T04:12:41Z |
Hole and electron field-effect mobilities in nanocrystalline silicon deposited at 150°C
|
Cheng, I.-C.; Wagner, S.; I-CHUN CHENG |
| 臺大學術典藏 |
2018-09-10T03:47:44Z |
Polycrystalline silicon thin-film transistors
|
Wagner, S.; Wu, M.; Min, B.-G.R.; Cheng, I.-C.; I-CHUN CHENG |
| 臺大學術典藏 |
2018-09-10T03:47:44Z |
High electron mobility TFTs of nanocrystalline silicon deposited at 150°C on plastic foil
|
Cheng, I.-C.; Wagner, S.; Bae, S.; Fonash, S.J.; I-CHUN CHENG |
| 臺大學術典藏 |
2018-09-10T03:29:29Z |
Thin film transistors with electron mobility of 40 cm2V-1s-1 made from directly deposited intrinsic microcrystalline silicon
|
Cheng, I.-C.; Wagner, S.; Mulato, M.; I-CHUN CHENG |
| 國立臺灣大學 |
2009-02 |
FLEXIBLE ELECTRONICS: MATERIALS AND APPLICATIONS(CH1)
|
Cheng, I-Chun; Wagner, S. |
| 臺大學術典藏 |
2009-02 |
FLEXIBLE ELECTRONICS: MATERIALS AND APPLICATIONS(CH1)
|
Cheng, I-Chun; Wagner, S.; Cheng, I-Chun; Wagner, S. |
Showing items 31-40 of 49 (5 Page(s) Totally)
<< < 1 2 3 4 5 > >>
View [10|25|50] records per page
|
